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CN-224218758-U - Dense grid line structure of solar cell

CN224218758UCN 224218758 UCN224218758 UCN 224218758UCN-224218758-U

Abstract

The application relates to a solar cell dense grid line structure which comprises a plurality of main grids arranged on a silicon substrate at intervals and a plurality of first auxiliary grids perpendicular to the main grids, wherein the first auxiliary grids are provided with a plurality of disconnected spacing areas, the spacing areas between the adjacent first auxiliary grids are arranged in a staggered mode, at least two second auxiliary grids for forming a loop are arranged between the adjacent two first auxiliary grids, and the second auxiliary grids are parallel to the length direction of the main grids. The application has the effect of reducing the negative effects of reduced open voltage, increased silver paste consumption and increased shading area caused by the increase of the number of the grid lines.

Inventors

  • MAO YU
  • LI JI
  • LUO XIAOGANG

Assignees

  • 淮安捷泰新能源科技有限公司

Dates

Publication Date
20260508
Application Date
20250514

Claims (7)

  1. 1. The solar cell dense grid line structure is characterized by comprising a plurality of main grids (1) which are arranged on a silicon substrate at intervals and a plurality of first auxiliary grids (2) which are perpendicular to the main grids (1), wherein a plurality of disconnected spacing areas (21) are arranged in the length direction of each first auxiliary grid (2), the spacing areas (21) between the adjacent first auxiliary grids (2) are arranged in a staggered mode, at least two second auxiliary grids (3) for forming a loop are arranged between the adjacent two first auxiliary grids (2), and the second auxiliary grids (3) are parallel to the length direction of the main grids (1); The spacing areas (21) on the first auxiliary grids (2) adjacent in the vertical direction are staggered and disconnected, and the spacing areas (21) are distributed relatively with respect to the central line of the main grid (1).
  2. 2. The solar cell dense grid line structure according to claim 1, wherein the length S1 of the spacing region (21) on the first sub grid (2) is 3-1mm.
  3. 3. The solar cell dense grid line structure according to claim 1, wherein the distance between two adjacent first auxiliary grids (2) is the same as the length of the second auxiliary grid (3), and the length of the second auxiliary grid (3) is 0.8-1.15mm.
  4. 4. The solar cell dense grid line structure of claim 3, wherein the silicon substrate comprises a front surface and a back surface which are oppositely arranged, a part of the first auxiliary grid (2) on the front surface of the silicon substrate is a continuous grid line structure, and a part of the continuous first auxiliary grid (2) is equidistantly arranged on the front surface of the silicon substrate at intervals.
  5. 5. The solar cell dense grid line structure of claim 1, wherein the main grids (1) are arranged at equal intervals, the number of the main grids (1) is 10-20, and the width of the main grids (1) is 30-70 μm.
  6. 6. The solar cell dense grid line structure according to claim 1, wherein two ends of the main grid (1) and two ends disconnected in the middle are respectively provided with a harpoon (4), and the opening spacing of the harpoon (4) is 1.53-2.83mm.
  7. 7. The solar cell dense grid line structure of claim 5, further comprising outer frame lines (5) positioned at two ends of the first auxiliary grid (2) and bonding pads (6) positioned on the main grid (1), wherein the bonding pads (6) on the front surface of the silicon substrate are staggered with the bonding pads (6) on the back surface of the silicon substrate.

Description

Dense grid line structure of solar cell Technical Field The application relates to the technical field of solar cells, in particular to a solar cell dense grid line structure. Background In the solar cell production process, the current collection path is shortened and the contact resistance is reduced by increasing the number of grid lines, so that the conversion efficiency is improved. However, an increase in the number of gate lines results in an increase in metal recombination, resulting in a loss of on-voltage. When the number of the grid lines exceeds a threshold value, the loss of open voltage reduction is larger than the benefits brought by short circuit current and filling lifting, the power of the component is reduced, and the design expectation cannot be achieved. And the increase of the number of the grid lines can lead to the increase of the shading area on one hand, the collection of light is influenced, the metal composite rises along with the increase of the contact area, the open voltage is reduced, the increase of the silver paste dosage can be caused on the other hand, and the problem of cost rise caused by the increase of the silver paste consumption can not be offset by the benefit of efficiency improvement. Simply increasing the number of gate lines has not enabled the design expectations of denser gate lines. Disclosure of utility model In order to reduce the negative effects of reduced open voltage, increased silver paste consumption and increased shading area caused by the increase of the number of grid lines, the application provides a solar cell dense grid line structure. In a first aspect, the present application provides a dense grid line structure of solar cells, which adopts the following technical scheme: The utility model provides a dense grid line structure of solar wafer, includes many interval setting main bars and many first pair bars of perpendicular to main bars on the silicon substrate, and have a plurality of disconnected interval regions in the length direction of first pair bars, interval region between the adjacent first pair bars is crisscross to be set up, has two at least second pair bars that are used for forming the return circuit between two adjacent first pair bars, the second pair bars is on a parallel with the length direction of main bars. By adopting the technical scheme, the first auxiliary grids among the main grids are disconnected to form the spacing areas and are arranged in a staggered way by adjusting the structural layout of the grid lines, and the second auxiliary grids parallel to the direction of the main grids are added to form a loop. The contact area of a single first auxiliary grid and a silicon substrate is reduced, the quantity of grid lines is increased to a certain extent, the shading area and the silver paste consumption can be reduced, the contact area of the grid lines and the silicon substrate is reduced, the metal compounding is reduced, the open voltage loss is reduced, and the denser grid line design can be realized. Optionally, the length S1 of the spacer on the first sub-gate is 3-1mm. Optionally, the spacing areas on the first auxiliary grids adjacent in the vertical direction are staggered and disconnected, and the spacing areas are distributed relatively with respect to the central line of the main grid. Optionally, the distance between two adjacent first auxiliary grids is the same as the length of the second auxiliary grid, and the length of the second auxiliary grid is 0.8-1.15mm. Optionally, the silicon substrate includes a front surface and a back surface which are oppositely arranged, a part of the first auxiliary grids on the front surface of the silicon substrate are in continuous grid line structures, and a part of the continuous first auxiliary grids are arranged on the front surface of the silicon substrate at equal intervals. By adopting the technical scheme, the first auxiliary grid on the front surface of the silicon substrate maintains a part of a conventional continuous grid line structure so as to ensure the effect of laser-assisted sintering. Optionally, the main grids are arranged at equal intervals, the number of the main grids is 10-20, and the width of the main grids is 30-70 μm. Optionally, two ends of the main grid and two ends of the middle section are respectively provided with a harpoon, and the opening spacing of the harpoon is 1.53-2.83mm. Optionally, the semiconductor device further comprises outer frame lines positioned at two ends of the first auxiliary grid and bonding pads positioned on the main grid, wherein the bonding pads on the front surface of the silicon substrate are staggered with the bonding pads on the back surface of the silicon substrate. By adopting the technical scheme, the fish-fork finger is an expanding structure similar to a fish-fork shape, which is displayed at the end part in the printing process of the main grid or the auxiliary grid. In general, in order to increase