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CN-224218759-U - Solar cell

CN224218759UCN 224218759 UCN224218759 UCN 224218759UCN-224218759-U

Abstract

The application relates to the technical field of photovoltaic cells, and particularly provides a solar cell. The method aims at solving the problems that the too thin blocking layer easily causes metal slurry to burn through a polycrystalline silicon layer, and the too thick blocking layer causes low short circuit current of the battery and affects the battery efficiency. The application provides a solar cell which comprises a silicon substrate, a tunneling oxide layer, a multi-layer polysilicon layer, a blocking layer, a passivation layer and a plurality of electrodes, wherein the tunneling oxide layer is arranged on the silicon substrate, the multi-layer polysilicon layer is arranged on the tunneling oxide layer, the blocking layer is arranged between two adjacent polysilicon layers, the passivation layer is arranged on the multi-layer polysilicon layer, the electrodes are arranged on the passivation layer, the blocking layer comprises a plurality of first blocking parts and second blocking parts, the first blocking parts correspond to orthographic projections of the electrodes on the silicon substrate one by one, and the thickness of the first blocking parts is larger than that of the second blocking parts, or the blocking layer only comprises the first blocking parts. The application can avoid the metal slurry from burning through the polysilicon layer and reduce the influence of the blocking layer on the short circuit current of the battery.

Inventors

  • HUO JINYAN
  • CHEN JINGSHAO
  • CHEN DAMING
  • YANG DEHUI
  • ZHANG YU

Assignees

  • 天合光能股份有限公司

Dates

Publication Date
20260508
Application Date
20250609

Claims (10)

  1. 1. A solar cell, the solar cell comprising: a silicon substrate (100) comprising oppositely disposed first and second surfaces; A tunneling oxide layer (200) disposed on the first surface and/or the second surface of the silicon substrate (100); a multi-layer polysilicon layer (300) disposed on the tunnel oxide layer (200); A barrier layer (400) disposed between two adjacent polysilicon layers (300); a passivation layer (500) disposed on the plurality of polysilicon layers (300); a plurality of electrodes (600) disposed on the passivation layer (500); The barrier layer (400) comprises a plurality of first barrier parts (401) and second barrier parts (402), the first barrier parts (401) are in one-to-one correspondence with the orthographic projections of the electrodes (600) on the silicon substrate (100), the thickness of the first barrier parts (401) is larger than that of the second barrier parts (402), or the barrier layer (400) only comprises a plurality of first barrier parts (401) in one-to-one correspondence with the orthographic projections of the electrodes (600) on the silicon substrate (100).
  2. 2. The solar cell according to claim 1, wherein the thickness of the first barrier portion (401) has a value ranging from 2mm to 2.5mm.
  3. 3. The solar cell according to claim 1, wherein the thickness of the second barrier (402) ranges from 1mm to 2mm.
  4. 4. The solar cell according to claim 1, wherein the composition of the barrier layer (400) comprises one or more of silicon carbide, silicon oxide, silicon nitride and aluminum oxide.
  5. 5. The solar cell according to claim 1, characterized in that the orthographic projection of the first barrier (401) on the silicon substrate (100) comprises an orthographic projection of the electrode (600) on the silicon substrate (100).
  6. 6. The solar cell according to any of claims 1 to 5, characterized in that the solar cell comprises three layers of the polysilicon layers (300), and a first barrier layer (700) and a second barrier layer (800) arranged between two adjacent polysilicon layers (300), the first barrier layer (700) being located on a side of the second barrier layer (800) close to the silicon substrate (100).
  7. 7. The solar cell according to claim 6, wherein the first barrier layer (700) comprises the first barrier (401) and the second barrier (402), the second barrier layer (800) comprising only the first barrier (401).
  8. 8. The solar cell according to claim 6, wherein the first barrier layer (700) comprises only the first barrier (401), and the second barrier layer (800) comprises the first barrier (401) and the second barrier (402).
  9. 9. The solar cell according to claim 6, wherein the first barrier layer (700) comprises the first barrier (401) and the second barrier (402), and the second barrier layer (800) comprises the first barrier (401) and the second barrier (402).
  10. 10. The solar cell according to any of claims 1 to 5, wherein the passivation layer (500) comprises a layer of silicon nitride (501) and a layer of aluminum oxide (502) arranged in a stack.

Description

Solar cell Technical Field The application relates to the technical field of photovoltaic cells, in particular to a solar cell. Background The tunneling oxide layer solar cell (Tunnel Oxide Passivating Contacts, TOPCon) forms a novel passivation contact structure through the tunneling oxide layer and the doped polysilicon layer, and the passivation contact structure can selectively transmit carriers, so that the overall efficiency of the solar cell is remarkably improved, and the passivation contact structure becomes an important direction for the development of a photovoltaic cell. In the related art, a solar cell comprises a silicon substrate and an electrode, wherein a tunneling oxide layer is arranged on one surface of the silicon substrate, at least two doped polysilicon layers are arranged on one side, far away from the silicon substrate, of the tunneling oxide layer, a barrier layer is arranged between adjacent doped polysilicon layers, and the electrode is electrically connected to different doped polysilicon layers. However, a certain amount of corrosive metal paste needs to be used in the metallization process of the solar cell, if the barrier layer is too thin, the metal paste is easy to burn through the polysilicon layer, and if the barrier layer is too thick, the short-circuit current of the solar cell is low, which affects the conversion efficiency of the cell. Accordingly, there is a need in the art for a new solution to the above-mentioned problems. Disclosure of utility model In order to solve at least one of the above problems in the prior art, namely, to solve the problem that if the barrier layer is too thin, the metal paste is easy to burn through the polysilicon layer, and if the barrier layer is too thick, the short circuit current of the solar cell is low, which affects the conversion efficiency of the cell. In a first aspect, the application provides a solar cell, which comprises a silicon substrate, a tunneling oxide layer, a multi-layer polysilicon layer, a blocking layer, a passivation layer and a plurality of electrodes, wherein the silicon substrate comprises a first surface and a second surface which are oppositely arranged, the tunneling oxide layer is arranged on the first surface and/or the second surface of the silicon substrate, the multi-layer polysilicon layer is arranged on the tunneling oxide layer, the blocking layer is arranged between two adjacent polysilicon layers, the passivation layer is arranged on the multi-layer polysilicon layer, the plurality of electrodes are arranged on the passivation layer, the blocking layer comprises a plurality of first blocking parts and second blocking parts, the first blocking parts are in one-to-one correspondence with orthographic projections of the electrodes on the silicon substrate, and the thickness of the first blocking parts is larger than that of the second blocking parts, or the blocking layer only comprises a plurality of first blocking parts in one-to-one correspondence with orthographic projections of the electrodes on the silicon substrate. In some embodiments, the thickness of the first blocking portion ranges from 2mm to 2.5mm. In some embodiments, the thickness of the second blocking portion ranges from 1mm to 2mm. In some embodiments, the composition of the barrier layer includes one or more of silicon carbide, silicon oxide, silicon nitride, and aluminum oxide. In some embodiments, the orthographic projection of the first barrier onto the silicon substrate comprises an orthographic projection of the electrode onto the silicon substrate. In some embodiments, the solar cell includes three layers of the polysilicon layer, and a first barrier layer and a second barrier layer disposed between adjacent two of the polysilicon layers, the first barrier layer being located on a side of the second barrier layer adjacent to the silicon substrate. In some embodiments, the first barrier layer includes the first barrier and the second barrier, and the second barrier layer includes only the first barrier. In some embodiments, the first barrier layer includes only the first barrier and the second barrier layer includes the first barrier and the second barrier. In some embodiments, the first barrier layer includes the first barrier and the second barrier, and the second barrier layer includes the first barrier and the second barrier. In some embodiments, the passivation layer includes a silicon nitride layer and an aluminum oxide layer in a stacked arrangement. Under the premise of adopting the technical scheme, the solar cell provided by the application is provided with the barrier layer between two adjacent polysilicon layers, wherein the barrier layer comprises the first barrier part corresponding to the electrode and the second barrier part corresponding to the outer side area of the electrode, or the barrier layer only comprises the first barrier part corresponding to the electrode, and the thickness of the first barrier p