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CN-224218765-U - Mini-LED chip and display screen

CN224218765UCN 224218765 UCN224218765 UCN 224218765UCN-224218765-U

Abstract

The utility model discloses a Mini-LED chip and a display screen, and relates to the field of semiconductor photoelectric devices. The Mini-LED chip comprises a substrate, an N-type semiconductor layer, an active layer and a P-type semiconductor layer which are sequentially laminated on the substrate, wherein a transparent conducting layer and a P-type electrode are sequentially laminated on the P-type semiconductor layer, the Mini-LED chip further comprises a passivation reflecting layer, an N-type bonding pad, a P-type bonding pad and a tin-resistant layer, the tin-resistant layer is made of insulating materials, the top of the tin-resistant layer comprises a plurality of barrier strips arranged between the P-type bonding pad and the N-type bonding pad, and the top surface of the barrier strips is higher than the top surface of the P-type bonding pad and the top surface of the N-type bonding pad. The barrier grooves between the barrier strips can effectively prevent the connection of the solder paste layers on the N-type bonding pad and the P-type bonding pad, and improves the welding yield.

Inventors

  • ZHANG XINGXING
  • ZHANG YA
  • ZHANG XUE
  • HU JIAHUI
  • Jin Conglong

Assignees

  • 江西兆驰半导体有限公司

Dates

Publication Date
20260508
Application Date
20250516

Claims (10)

  1. 1. The Mini-LED chip is characterized by comprising a substrate, an N-type semiconductor layer, an active layer and a P-type semiconductor layer, wherein the N-type semiconductor layer, the active layer and the P-type semiconductor layer are sequentially laminated on the substrate, and a transparent conductive layer and a P-type electrode are sequentially laminated on the P-type semiconductor layer; The Mini-LED chip further comprises a passivation reflecting layer, an N-type bonding pad, a P-type bonding pad and a tin-resistant layer, wherein the passivation reflecting layer covers the P-type semiconductor layer, the transparent conducting layer, the P-type electrode, the step part and the N-type electrode, and the tin-resistant layer covers the passivation reflecting layer; The passivation reflecting layer and the tin-blocking layer are provided with N-type connecting holes above the N-type electrode and P-type connecting holes above the P-type electrode, the N-type bonding pad is arranged above the N-type electrode and connected with the N-type electrode through the N-type connecting holes, and the P-type electrode is arranged above the P-type electrode and connected with the P-type electrode through the P-type connecting holes; The tin-blocking layer is made of insulating materials, the top of the tin-blocking layer comprises a plurality of blocking strips arranged between the P-type bonding pad and the N-type bonding pad, and the top surface of the blocking strips is higher than the top surfaces of the P-type bonding pad and the N-type bonding pad.
  2. 2. The Mini-LED chip of claim 1, wherein the tin-blocking layer comprises a cover bottom layer disposed on the bottom and a plurality of barrier strips disposed on the cover bottom layer, the cover bottom layer covering the passivation reflective layer.
  3. 3. The Mini-LED chip of claim 1, wherein the spacing between a plurality of said barrier ribs is the same or different; the difference between the height of the barrier strip and the thickness of the N-type bonding pad is 1.5-5 mu m, and the thickness of the P-type bonding pad is the same as the thickness of the N-type bonding pad.
  4. 4. The Mini-LED chip of claim 2, wherein the thickness of the cover bottom layer is less than the thickness of the N-type pad and the thickness of the P-type pad; the thickness of the P-type bonding pad is the same as that of the N-type bonding pad.
  5. 5. The Mini-LED chip according to claim 1, wherein the thicknesses of the N-type bonding pad and the P-type bonding pad are 1-5 μm; the height of the barrier strips is 3-8 mu m.
  6. 6. The Mini-LED chip of claim 1, wherein a plurality of barrier ribs are spaced evenly between the N-type pad and the P-type pad; the distance between adjacent barrier strips is 3-30 mu m, and the width of each barrier strip is 4-20 mu m.
  7. 7. The Mini-LED chip of claim 1, wherein a distance between the barrier rib closest to the N-type pad and the N-type pad is 5-30 μm, and a distance between the barrier rib closest to the P-type pad and the P-type pad is 5-30 μm.
  8. 8. The Mini-LED chip of claim 2, wherein the thickness of the cover base layer is 0.1-0.8 μm.
  9. 9. The Mini-LED chip of claim 1, wherein the tin-blocking layer is a SiO 2 layer, a SVN layer, a SiON layer, or an Al 2 O 3 layer.
  10. 10. A display screen characterized by comprising a Mini-LED chip as claimed in any one of claims 1 to 9.

Description

Mini-LED chip and display screen Technical Field The utility model relates to the field of semiconductor photoelectric devices, in particular to a Mini-LED chip and a display screen. Background The flip mini LED chip can be used for COB direct display scheme, realizes high-definition and high-resolution display through independent control of RGB three primary color chips, has the advantages of rich colors, energy conservation, long service life, light weight and the like, and gradually becomes the main stream in the display screen market. The current mini LED chip size can be 3 x 6mil and 2 x 4mil at minimum, and the bonding pad spacing is smaller along with the smaller size. This causes the bonding pad to be easily tin-connected, resulting in the N-type bonding pad (connecting the negative electrode) and the P-type bonding pad (connecting the positive electrode) being connected together, and a short circuit phenomenon. Disclosure of utility model The technical problem to be solved by the utility model is to provide the Mini-LED chip which can effectively prevent solder connection of a bonding pad and improve the welding yield. The utility model also solves the technical problem of providing a display screen with high yield. In order to solve the problems, the utility model discloses a Mini-LED chip, which comprises a substrate, an N-type semiconductor layer, an active layer and a P-type semiconductor layer, wherein the N-type semiconductor layer, the active layer and the P-type semiconductor layer are sequentially laminated on the substrate; The Mini-LED chip further comprises a passivation reflecting layer, an N-type bonding pad, a P-type bonding pad and a tin-resistant layer, wherein the passivation reflecting layer covers the P-type semiconductor layer, the transparent conducting layer, the P-type electrode, the step part and the N-type electrode, and the tin-resistant layer covers the passivation reflecting layer; The passivation reflecting layer and the tin-blocking layer are provided with N-type connecting holes above the N-type electrode and P-type connecting holes above the P-type electrode, the N-type bonding pad is arranged above the N-type electrode and connected with the N-type electrode through the N-type connecting holes, and the P-type electrode is arranged above the P-type electrode and connected with the P-type electrode through the P-type connecting holes; the tin-blocking layer is made of insulating materials, the top of the tin-blocking layer comprises a plurality of blocking strips arranged between the P-type bonding pad and the N-type bonding pad, blocking grooves are formed between adjacent blocking strips, and the top surfaces of the blocking strips are higher than the top surfaces of the P-type bonding pad and the N-type bonding pad. As an improvement of the technical scheme, the tin-blocking layer comprises a covering bottom layer arranged at the bottom and a plurality of barrier strips arranged on the covering bottom layer, and the covering bottom layer covers the passivation reflecting layer. As an improvement of the technical scheme, the spacing between a plurality of the barrier strips is the same or different; the difference between the height of the barrier strip and the thickness of the N-type bonding pad is 1.5-5 mu m, and the thickness of the P-type bonding pad is the same as the thickness of the N-type bonding pad. As an improvement of the technical scheme, the thickness of the covering bottom layer is smaller than the thickness of the N-type bonding pad and the thickness of the P-type bonding pad; the thickness of the P-type bonding pad is the same as that of the N-type bonding pad. As an improvement of the technical scheme, the thicknesses of the N-type bonding pad and the P-type bonding pad are 1-5 mu m; the height of the barrier strips is 3-8 mu m. As an improvement of the above technical solution, the plurality of barrier ribs are uniformly distributed between the N-type bonding pad and the P-type bonding pad; the distance between adjacent barrier strips is 3-30 mu m, and the width of each barrier strip is 4-20 mu m. As an improvement of the technical scheme, the distance between the barrier strip closest to the N-type bonding pad and the N-type bonding pad is 5-30 mu m, and the distance between the barrier strip closest to the P-type bonding pad and the P-type bonding pad is 5-30 mu m. As an improvement of the technical scheme, the thickness of the covering bottom layer is 0.1-0.8 mu m. As an improvement of the technical scheme, the tin-blocking layer is a SiO 2 layer, a SiN layer, a SiON layer or an Al 2O3 layer. Correspondingly, the utility model also discloses a display screen which comprises the Mini-LED chip. The implementation of the utility model has the following beneficial effects: In the Mini-LED chip provided by the embodiment of the utility model, the tin blocking layer is formed on the passivation reflecting layer and is made of an insulating material,