CN-224218769-U - Light-emitting device structure capable of being controlled in different areas

CN224218769UCN 224218769 UCN224218769 UCN 224218769UCN-224218769-U

Abstract

The utility model relates to a light-emitting device structure capable of being controlled by areas, which at least comprises two independent areas, wherein one independent area at least comprises two light-emitting units, an isolation groove is formed between the light-emitting units, no isolation groove is formed between the light-emitting units of the other independent area, the two areas are connected through electrodes to realize independent light emission or simultaneous light emission, a first electrode is connected with a second electrode in an inscription manner, the second electrode is connected with a third electrode in an inscription manner, the third electrode is connected with a fourth electrode in an inscription manner, the light-emitting units of the edge area are simultaneously light-emitting, a fifth electrode is connected with a sixth electrode in an inscription manner, the light-emitting units of the middle area are simultaneously light-emitting, and when the electrodes of the edge area and the middle area are simultaneously connected, the isolation groove does not emit light. The utility model can realize independent light emission of different areas, can emit light simultaneously, and can increase the adjustability of the device, so that the device can be widely applied.

Inventors

YANG LIXUN
CAI LINRONG

Assignees

安徽格恩半导体有限公司

Dates

Publication Date: 20260508
Application Date: 20250402

Claims (6)

1. A zoned controllable light emitting device structure comprising at least two separate regions, characterized in that, Wherein, one single area at least comprises two light-emitting units, and isolation grooves are arranged between the light-emitting units; The two areas realize independent light emission or simultaneous light emission through electrode connection, and the method comprises the following steps: The edge area emits light, namely the first electrode (14) is internally connected with the second electrode (15), the second electrode (15) is externally connected with the third electrode (16), the third electrode (16) is internally connected with the fourth electrode (17), and the edge area light-emitting unit emits light simultaneously; The middle area emits light, the fifth electrode (18) is inscribed with the sixth electrode (19), so that the middle area emits light; When the electrodes in the edge area and the middle area are connected at the same time, the simultaneous light emission is realized, wherein the isolation groove does not emit light, and the transverse blank area does not emit light due to the internal wiring problem.
2. A zoned controllable light emitting device structure according to claim 1 wherein one individual zone comprises light emitting units a and B with isolation trenches between the light emitting units; Each light-emitting unit further comprises a first conductive layer (4) which forms ohmic contact with the first semiconductor layer (1), a reflective layer (5) which forms electrical connection with the first conductive layer (4), and a second conductive layer (6) which forms electrical connection with the reflective layer (5); Each light-emitting unit further comprises a recess penetrating the first semiconductor layer (1) and the active layer (3) and extending into the second semiconductor layer (2), and a third conductive layer (7) electrically connected with the second semiconductor layer (2) through the recess; The third conductive layer (7) of the light-emitting unit A and the second conductive layer (6) of the light-emitting unit B are electrically connected, and the light-emitting units are connected in series; A first insulating layer (8) is present between the first conductive layer (4) and a part of the surface of the reflective layer (5); a second insulating layer (9) covering the surface of the reflecting layer (5), wherein the area of the surface of the reflecting layer (5) without the first insulating layer (8) covers the second insulating layer (9); A third insulating layer (10) is arranged between the third conductive layer (7) of the light emitting unit A and a part of the surface of the second conductive layer (6) of the light emitting unit B at the serial connection position of the light emitting units; A fourth insulating layer (11) covering the surface of the third conductive layer (7) and connected with part of the surface of the third insulating layer (10) to isolate the light-emitting unit A from the light-emitting unit B; The first conductive layer (4), the reflecting layer (5), the second conductive layer (6), the electrode A and the third conductive layer (7) form a light-emitting unit A together; The third conductive layer bridges the light-emitting unit B, and the light-emitting unit B consists of a third conductive layer (7), a second conductive layer (6), a reflecting layer (5), a first conductive layer (4) and an electrode B; The fourth insulating layer (11) is connected with the substrate (13) through the bonding layer (12) to form a high-voltage chip structure, and the substrate (13) is used as a bonding surface of the package.
3. A zoned controllable light emitting device structure according to claim 1 wherein the other individual zone light emitting unit comprises; The semiconductor device comprises a first semiconductor layer (1), a first conductive layer (4) forming ohmic contact with the first semiconductor layer (1), a reflecting layer (5) forming electric connection with the first conductive layer (4), a second conductive layer (6) forming electric connection with the reflecting layer (5), an electrode A forming electric connection with the second conductive layer (6), wherein the first conductive layer (4), the reflecting layer (5), the second conductive layer (6) and the electrode A form a first electric connection layer together; A recess penetrating the first semiconductor layer (1) and the active layer (3) and extending into the second semiconductor layer (2), and a third conductive layer (7) electrically connected to the second semiconductor layer (2) by the recess; the third conductive layer (7) and part of the second conductive layer (6) form electric connection, and the third conductive layer (7), the second conductive layer (6) and the electrode B form a second electric connection layer together; A first insulating layer (8) is present between the first conductive layer (4) and a part of the surface of the reflective layer (5); a second insulating layer (9) covering the surface of the reflecting layer (5), wherein the area of the surface of the reflecting layer (5) without the first insulating layer (8) covers the second insulating layer (9); A third insulating layer (10) covering the side wall of the recess and one side of the first electrical connection layer; A fourth insulating layer (11) which covers the surface of the third conductive layer (7) and is connected with part of the surface of the third insulating layer (10); The fourth insulating layer (11) is connected with the substrate (13) through the bonding layer (12) to form a high-voltage chip structure, and the substrate (13) is used as a bonding surface of the package.
4. The area-controllable light-emitting device structure according to claim 1, wherein the light-emitting units each employ a light-emitting device composed of a first semiconductor layer (1), a second semiconductor layer (2) and an active layer (3), and the active layer (3) is located between the first semiconductor layer (1) and the second semiconductor layer (2).
5. The area-controllable light-emitting device structure according to claim 1, wherein when the first electrode (14) and the fifth electrode (18) are not provided with a common positive electrode, the area of the transverse non-light area is large, and when the first electrode (14) and the fifth electrode (18) are provided with a common positive electrode, the area of the transverse non-light area is greatly reduced, and the area of the non-light area is reduced by 3% -15%.
6. A zoned controllable light emitting device structure according to claim 2 or 3, characterized in that the reflective layer (5) is a multilayer structure, and the second conductive layer (6), the third conductive layer (7), the electrode a, the electrode B, the bonding layer (12) are multilayer metal structures.

Description

Light-emitting device structure capable of being controlled in different areas Technical Field The utility model relates to the technical field of semiconductor light-emitting diodes, in particular to a light-emitting device structure capable of being controlled by different areas. Background The existing high-voltage light-emitting diode emits light integrally, namely, output power is guaranteed, and when current is given, all light-emitting units connected in series emit light simultaneously, so that regional adjustable light emission cannot be realized. The utility model designs a light-emitting device structure capable of being controlled by different areas, which can realize independent light emission of different areas and can also emit light simultaneously, thereby increasing the adjustability of the device and leading the device to be more widely applied. Disclosure of utility model Based on the technical problems in the background technology, the utility model provides a light-emitting device structure capable of being controlled by areas, so that short-distance and long-distance illumination can be realized simultaneously, and the illumination range and the visual field are enlarged. The utility model provides a light-emitting device structure capable of being controlled by areas, which at least comprises two independent areas, wherein one independent area at least comprises two light-emitting units, and isolation grooves are formed between the light-emitting units; The two areas realize independent light emission or simultaneous light emission through electrode connection, and the method comprises the following steps: The edge area emits light, namely the first electrode is connected with the second electrode in an inscribed manner, the second electrode is connected with the third electrode in an inscribed manner, and the third electrode is connected with the fourth electrode in an inscribed manner, so that the edge area light-emitting units emit light simultaneously; The middle area emits light, namely a fifth electrode is inscribed with a sixth electrode, so that the middle area emits light; When the electrodes in the edge area and the middle area are connected at the same time, the simultaneous light emission is realized, wherein the isolation groove does not emit light, and the transverse blank area does not emit light due to the internal wiring problem. Preferably, one of the individual regions includes a light emitting unit a and a light emitting unit B, with an isolation groove therebetween; in each light emitting unit, a first conductive layer forming ohmic contact with the first semiconductor layer, a reflective layer electrically connected with the first conductive layer, and a second conductive layer electrically connected with the reflective layer; In each light emitting unit, a recess penetrating the first semiconductor layer and the active layer and extending into the second semiconductor layer, and a third conductive layer electrically connected with the second semiconductor layer through the recess; The third conductive layer of the light-emitting unit A and the second conductive layer of the light-emitting unit B are electrically connected, and the light-emitting units are connected in series; A first insulating layer is present between the first conductive layer and a part of the surface of the reflective layer; The second insulating layer covers the surface of the reflecting layer, and the area without the first insulating layer on the surface of the reflecting layer covers the second insulating layer; a third insulating layer is arranged between the third conductive layer of the light emitting unit A and the surface of the second conductive layer part of the light emitting unit B at the serial connection position of the light emitting units; a fourth insulating layer covering the surface of the third conductive layer and connected with part of the surface of the third insulating layer for isolating the light-emitting unit A and the light-emitting unit B; The first conductive layer, the reflecting layer, the second conductive layer, the electrode A and the third conductive layer form a light-emitting unit A together; the third conductive layer bridges the light-emitting unit B, and the light-emitting unit B consists of the third conductive layer, the second conductive layer, the reflecting layer, the first conductive layer and the electrode B; the fourth insulating layer is connected with the substrate through the bonding layer to form a high-voltage chip structure, and the substrate is used as a bonding surface of the package. Preferably, the other individual area light emitting unit includes; a first conductive layer forming ohmic contact with the first semiconductor layer, a reflective layer electrically connected with the first conductive layer, and a second conductive layer electrically connected with the reflective layer; the first conductive layer, the reflecting layer,