CN-224218771-U - Micro light emitting structure and micro light emitting device

CN224218771UCN 224218771 UCN224218771 UCN 224218771UCN-224218771-U

Abstract

The application discloses a micro light-emitting structure and a micro light-emitting device, which are characterized in that light emitted by the side wall of a pixel unit is shielded by a metal wall arranged between adjacent pixel units, so that optical crosstalk is avoided, and a coplanar design of the top surface of the metal wall and the top surface of a first electrode is flush, so that a bonding layer can be ensured to be simultaneously contacted with the first electrode and a second electrode, thereby avoiding the problem of false welding or disconnection caused by a height difference.

Inventors

JIANG BINGXIN
QIU CHENGFENG
HUANG BINGQUAN
WU TAO

Assignees

深圳市思坦科技有限公司

Dates

Publication Date: 20260508
Application Date: 20250408

Claims (11)

1. The miniature luminous structure comprises a pixel array, wherein the pixel array is provided with a plurality of pixel units, each pixel unit comprises a first semiconductor layer, a luminous layer, a second semiconductor layer and a first electrode which are sequentially stacked, and a second electrode which is arranged in the peripheral area of the pixel array, and the miniature luminous structure is characterized in that a metal wall is arranged in the pixel array, an isolation structure is formed between every two adjacent pixel units by the metal wall, the top surface of the metal wall is level with the top surface of the first electrode, and the height of the metal wall is larger than the height of the side wall of the luminous layer; the metal wall and the second electrode are integrally connected to form a conductive network.
2. The micro light emitting structure of claim 1, wherein the metal wall comprises a first metal layer and a second metal layer, wherein the first metal layer is disposed proximate to the first semiconductor layer and the second metal layer is disposed distal to the first semiconductor layer, wherein the first metal layer is a high conductivity material and the second metal layer is a high reflectivity material.
3. The micro light emitting structure of claim 2, wherein the bottom of the first metal layer comprises a conductive contact portion extending into the first semiconductor layer and forming an ohmic contact with the first semiconductor layer, and wherein the conductive contact portion is made of titanium aluminum alloy.
4. A micro-light emitting structure according to claim 1, wherein the second electrode is a ring-shaped electrode arranged around the pixel array.
5. The micro light emitting structure of claim 1, further comprising an insulating layer covering the surface of the pixel array, the metal wall, and the area between the pixel array and the second electrode, wherein the first electrode is isolated from the metal wall by the insulating layer.
6. The micro light emitting structure of claim 5, wherein a contact hole is provided in the insulating layer, the contact hole being located at a connection region of the first electrode and the second electrode, so that the first electrode and the second electrode are electrically connected through the contact hole.
7. The micro light emitting structure of claim 5, wherein a bottom of the metal wall is in direct contact with the first semiconductor layer, and the insulating layer is uncovered at a contact area of the metal wall with the first semiconductor layer.
8. The micro light emitting structure of claim 1, wherein a ratio of the width of the metal wall to the channel spacing between adjacent pixel units is greater than or equal to 50% and less than or equal to 80%.
9. The micro light emitting structure of claim 1, wherein a lateral spacing between a sidewall of the metal wall and a sidewall of the light emitting layer is greater than or equal to 1.0 micron and less than or equal to 1.5 microns.
10. The micro light emitting structure of claim 1, further comprising a transparent conductive layer disposed between the second semiconductor layer and the first electrode, wherein the transparent conductive layer is made of indium tin oxide or indium gallium zinc oxide.
11. A micro light emitting device, comprising the micro light emitting structure according to any one of claims 1 to 10 and a driving substrate, wherein the driving substrate is a silicon substrate, a first bonding point and a second bonding point are arranged on the silicon substrate, the first bonding point is correspondingly bonded with the first electrode, and the second bonding point is correspondingly bonded with the second electrode.

Description

Micro light emitting structure and micro light emitting device Technical Field The application relates to the technical field of semiconductor light emitting, in particular to a miniature light emitting structure and a miniature light emitting device. Background With the continuous development of display technology, micro light emitting diodes (Micro-LEDs) are leading to industry innovation as a new generation of display technology, and gradually become a core technology in the high-end display field by virtue of the advantages of ultra-high resolution, high color saturation, flexible display, ultra-long service life and the like. However, as market demands move toward smaller, higher brightness, and higher integration, micro-LED technology faces a number of technical bottlenecks. Disclosure of utility model The embodiment of the application provides a micro light-emitting structure and a micro light-emitting device, which are used for solving the problems in the related art. In order to solve the above problems, in a first aspect, an embodiment of the present application provides a micro light emitting structure, which includes a pixel array, where the pixel array includes a plurality of pixel units, each pixel unit includes a first semiconductor layer, a light emitting layer, a second semiconductor layer, and a first electrode that are sequentially stacked, and a second electrode that is disposed in a peripheral area of the pixel array, a metal wall is disposed in the pixel array, where the metal wall forms an isolation structure between adjacent pixel units, a top surface of the metal wall is level with a top surface of the first electrode, and a height of the metal wall is greater than a sidewall height of the light emitting layer, and the metal wall and the second electrode are integrally connected to form a conductive network. In some possible embodiments, the metal wall comprises a first metal layer and a second metal layer, wherein the first metal layer is disposed proximate to the first semiconductor layer and the second metal layer is disposed distal to the first semiconductor layer, wherein the first metal layer is a high conductivity material and the second metal layer is a high reflectivity material. In some possible embodiments, the bottom of the first metal layer includes a conductive contact portion, the conductive contact portion extends into the first semiconductor layer and forms ohmic contact with the first semiconductor layer, and the conductive contact portion is made of titanium-aluminum alloy. In some possible embodiments, the second electrode is a ring-shaped electrode disposed around the pixel array. In some possible embodiments, the micro light emitting structure further comprises an insulating layer covering the surface of the pixel array, the metal wall and the area between the pixel array and the second electrode, wherein the first electrode and the metal wall are isolated by the insulating layer. In some possible embodiments, a contact hole is disposed in the insulating layer, and the contact hole is located in a connection region of the first electrode and the second electrode, so that the first electrode and the second electrode are electrically connected through the contact hole. In some possible embodiments, the bottom of the metal wall is in direct contact with the first semiconductor layer, and the insulating layer is uncovered at the contact area of the metal wall with the first semiconductor layer. In some possible embodiments, the width of the metal wall is greater than or equal to 50% and less than or equal to 80% of the channel spacing between adjacent pixel cells. In some possible embodiments, a lateral spacing between a sidewall of the metal wall and a sidewall of the light emitting layer is greater than or equal to 1.0 microns and less than or equal to 1.5 microns. In some possible embodiments, the micro light emitting structure further includes a transparent conductive layer disposed between the second semiconductor layer and the first electrode, and the transparent conductive layer is made of indium tin oxide or indium gallium zinc oxide. In a second aspect, an embodiment of the present application provides a micro light emitting device, including a micro light emitting structure and a driving substrate as described in any one of the preceding claims, where the driving substrate is a silicon substrate, and a first bonding point and a second bonding point are disposed on the silicon substrate, where the first bonding point is bonded with the first electrode correspondingly, and the second bonding point is bonded with the second electrode correspondingly. Based on the technical scheme, the metal wall arranged between the adjacent pixel units is used for shielding the light emitted by the side walls of the pixel units, so that optical crosstalk is avoided, the coplanar design that the top surfaces of the metal wall and the top surfaces of the first electrodes are