CN-224218804-U - Semiconductor power module and motor control device

Abstract

The utility model provides a semiconductor power module and a motor control device, which comprises a shell, at least two substrate units and a radiator which is arranged in a space mode, wherein the radiator is provided with a radiating area for installing the substrate units, each substrate unit corresponds to one radiating area, a cooling runner for cooling liquid to flow through each radiating area is arranged in the radiator, and the shell is arranged on the radiator, so that a closed space is formed between the radiator and the shell and used for sealing each substrate unit. The utility model can greatly reduce the occupied area, so as to reduce the whole volume of the equipment, and simultaneously improve the space utilization rate and the power density of the equipment in the height direction.

Inventors

• YAO YUSHUANG
• HE YANG
• YANG QING
• FAN CHENGDONG

Assignees

• 芯迈半导体技术(杭州)股份有限公司

Dates

Publication Date

20260508

Application Date

20250226

Claims (8)

1. 1. The semiconductor power module is characterized by comprising a shell (100), at least two substrate units (200) and a radiator (300) in a bent structure, wherein the radiator (300) is provided with a radiating area (400) for installing the substrate units (200), each substrate unit (200) corresponds to one radiating area (400), a cooling flow channel (500) for cooling liquid to flow through each radiating area (400) is arranged in the radiator (300), a closed space is formed between the radiator (300) and the shell (100) in a matched mode and used for sealing each substrate unit (200), the radiator (300) comprises at least two radiating units (310), the radiating units (310) are sequentially connected at a preset angle to form a three-dimensional bent structure, and each radiating unit (310) is provided with a radiating plate (311) for installing the substrate unit to form the radiating area (400).
2. 2. The semiconductor power module of claim 1, wherein each of the heat dissipating units (310) is connected to form an L-shaped space structure.
3. 3. The semiconductor power module of claim 1, wherein each of the heat dissipation units (310) is connected in sequence to form a 匚 -type or U-type space structure.
4. 4. The semiconductor power module of claim 1, wherein each of the heat dissipating units (310) is connected in sequence to form a Z-type spatial structure.
5. 5. The semiconductor power module according to claim 1 or 2, further comprising a terminal assembly (600) connected to the substrate unit, the terminal assembly (600) comprising a signal pin (610) and a power terminal (620), the signal pin (610) being connected to one end of the substrate unit (200) in a vertical direction, the power terminal (620) being connected to the other end of the substrate unit (200) in a vertical direction.
6. 6. The semiconductor power module according to claim 5, characterized in that the power terminals (620) or the signal pins (610) on adjacent substrate units (200) are distributed at different ends.
7. 7. A semiconductor power module according to claim 1 or 2, characterized in that the side wall of the housing (100) is provided with a through hole (110).
8. 8. A motor control device comprising the semiconductor power module according to any one of claims 1 to 7.

Description

Semiconductor power module and motor control device Technical Field The present utility model relates to the field of semiconductor packaging technology, and in particular, to a semiconductor power module and a motor control device. Background A power module is a modular electronic assembly integrating a plurality of power semiconductor devices and a driving circuit, and is widely used in power control and conversion tasks requiring handling high voltage and high current. The power module has higher reliability, higher power density, and lower loss than discrete devices, playing a vital role in power electronics systems. Compared with Si devices, the third-generation semiconductor devices represented by SiC MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistor) are more suitable for the application of the power electronic converter in high-frequency, high-voltage and high-temperature occasions, and further increase the efficiency and power density of the converter. However, the widespread use of SiC MOSFETs also presents new challenges. Because of its high power density and high frequency operating characteristics, the heat flux density inside the device increases significantly, resulting in a significant increase in thermal resistance, which presents great difficulties in thermal management. If the thermal management is improper, the too high temperature not only reduces the performance and the service life of the device, but also can cause serious problems such as thermal runaway and the like, and seriously affects the safety and the stability of the power electronic converter. The power module is used as a modularized design of an integrated power semiconductor device and related circuits, and is widely applied to the fields of photovoltaics, energy storage, electric automobiles and the like due to compact size, excellent thermal management design and high reliability. In these application scenarios, the power module needs to operate stably for a long time in a severe environment, and the requirements on thermal management are particularly strict. HPD (High Power Device) is taken as a mature high-power module packaging technology, so that the thermal resistance can be effectively reduced, the heat dissipation efficiency is improved, and a powerful guarantee is provided for the stable operation of the power module. However, HPD packages themselves have some limitations, that is, HPD packages generally have a large floor space due to structural design and heat dissipation requirements, which directly results in an increase in the overall volume of the device (e.g., a motor control device), which not only makes the device subject to space limitations during installation and use, but also further results in an increase in the overall weight of the device, thereby affecting portability and installation flexibility. Disclosure of utility model In view of the above-mentioned drawbacks of the prior art, the present utility model is to provide a semiconductor power module and a device, which can greatly reduce the occupied area, so as to reduce the overall volume of the device and increase the power density. The utility model provides a semiconductor power module which comprises a shell, at least two substrate units and a radiator with a bending structure, wherein the radiator is provided with a radiating area for installing the substrate units, each substrate unit corresponds to one radiating area, a cooling flow passage for cooling liquid to flow through each radiating area is arranged in the radiator, and a closed space is formed between the radiator and the shell in a matched mode and used for sealing each substrate unit. Preferably, the radiator comprises at least two radiating units, and the radiating units are sequentially connected according to a preset angle to form a three-dimensional space structure. Preferably, each heat dissipation unit is provided with a heat dissipation plate for mounting the substrate unit, so as to form the heat dissipation area. Preferably, each heat dissipation unit is connected to form an L-shaped space structure. Preferably, each heat dissipation unit is sequentially connected to form a 匚 -type or U-type space structure. Preferably, each heat dissipation unit is sequentially connected to form a Z-type space structure. Preferably, the terminal assembly further comprises a signal pin and a power terminal, wherein the signal pin is connected to one end of the substrate unit in the vertical direction, and the power terminal is connected to the other end of the substrate unit in the vertical direction. Preferably, the power terminals or the signal pins on adjacent substrate units are distributed at different ends. Preferably, a through hole is arranged on the side wall of the shell. Another aspect of the utility model proposes a motor control device comprising a semiconductor power module as described above. As described above, the semiconductor power module and the motor con