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CN-224224609-U - Low ash semiconductor thermal field isostatic pressing graphite material forming device

CN224224609UCN 224224609 UCN224224609 UCN 224224609UCN-224224609-U

Abstract

The utility model relates to the technical field of semiconductor material manufacturing, in particular to a low ash semiconductor thermal field isostatic pressing graphite material forming device, which comprises a base, wherein the top of the base is fixedly provided with a bottom die through a bearing plate, both sides of the bottom die are respectively provided with a guide pillar, the upper end of each guide pillar is provided with a lifting plate driven by a hydraulic mechanism, the bottom of each lifting plate at the upper end of each guide pillar is provided with a die holder, the lower end of each die holder is internally provided with a rotary circular plate driven by a rotator, the center of the bottom of each rotary circular plate is provided with a main pressing block, the bottom of each rotary circular plate is also provided with a plurality of guide blocks in a surrounding mode through guide rail grooves, and the bottoms of the guide blocks are provided with dynamic pressure assemblies consisting of regulators and auxiliary pressing blocks. The low ash semiconductor thermal field isostatic pressing graphite material forming device improves the yield and the product performance, and ensures the quality consistency and the reliability of graphite products with complex shapes or large sizes.

Inventors

  • ZHANG XU
  • LI QIANGFEI
  • ZHANG JUNLING
  • LI FEIHONG
  • JI HONGFEI

Assignees

  • 平顶山市天宝特种材料有限公司

Dates

Publication Date
20260512
Application Date
20250604

Claims (6)

  1. 1. The utility model provides a low ash semiconductor thermal field isostatic pressing graphite material forming device, includes base (1), the top of base (1) is fixed with die block (2) through the loading board, the both sides of die block (2) all are equipped with guide pillar (3), wherein guide pillar (3) upper end is equipped with the lifter plate through hydraulic mechanism driven, die holder (4) are installed to the lifter plate bottom of guide pillar (3) upper end, inside rotatory plectane (6) that are equipped with through circulator (5) drive of die holder (4) lower extreme, the center department of rotatory plectane (6) bottom is equipped with main briquetting (8), the bottom of rotatory plectane (6) still encircles the drive through the guide rail groove has a plurality of guide block (9), the bottom of guide block (9) is equipped with the dynamic pressure subassembly that comprises regulator (10) and auxiliary briquetting (11).
  2. 2. The device for forming the low ash semiconductor thermal field isostatic pressing graphite material is characterized in that guide shafts (13) which are horizontally distributed are arranged in the guide rail grooves of the rotary circular plate (6), and the guide blocks (9) are movably sleeved outside the guide shafts (13).
  3. 3. The device for forming the low ash semiconductor thermal field isostatic pressing graphite material as claimed in claim 1, wherein the auxiliary pressing blocks (11) are of arc-shaped structures with the same size, and a pressure sensor (14) is arranged on the outer wall of each auxiliary pressing block (11).
  4. 4. The device for forming the low ash semiconductor thermal field isostatic pressing graphite material is characterized in that a sealing ring (15) is arranged on the outer wall of the edge of the rotary circular plate (6), and a sealing groove matched with the sealing ring (15) is arranged in the lower end of the die holder (4).
  5. 5. The device for forming the low ash semiconductor thermal field isostatic pressing graphite material is characterized in that six groups of dynamic pressure components are arranged at the bottom of the rotary circular plate (6), and the dynamic pressure components uniformly surround the periphery of the main pressing block (8).
  6. 6. The device for forming the low ash semiconductor thermal field isostatic pressing graphite material is characterized in that a connecting seat (7) is fixedly welded at the bottom of a lifting plate at the upper end of the guide post (3), and a jogged plate (12) which is matched with the inner structure of the connecting seat (7) is arranged at the top of the die seat (4).

Description

Low ash semiconductor thermal field isostatic pressing graphite material forming device Technical Field The utility model relates to the technical field of semiconductor material manufacturing, in particular to a low ash semiconductor thermal field isostatic pressing graphite material forming device. Background In the manufacturing process of semiconductor materials, isostatic graphite is widely used for manufacturing thermal field components of various semiconductor devices due to excellent electric conductivity, thermal conductivity and high temperature resistance. In order to meet the demands of high performance semiconductor devices, these graphite materials are required to have a lower ash content to reduce the impact of impurities on the semiconductor performance. Conventional isostatic graphite material forming processes include both cold isostatic pressing and hot isostatic pressing, which form graphite powder into a desired shape and density in a mold by applying uniform pressure. The existing isostatic pressing graphite material forming device has a remarkable problem that a single pressure applying mode is adopted, so that the problem of uneven pressure distribution easily occurs in the forming process of graphite products with complex shapes or large sizes, the quality of final products is affected, and meanwhile, cracks or inconsistent density of the materials can be generated in the pressing process, and the problems directly affect the yield and the product performance. Disclosure of utility model The utility model aims to provide a forming device for a low-ash semiconductor thermal field isostatic pressing graphite material, which solves the problems that in the process of manufacturing the low-ash semiconductor thermal field isostatic pressing graphite material, the pressure distribution is uneven, cracks are easy to generate in the product and the density is inconsistent due to the adoption of a single pressure application mode. The technical scheme is that the isostatic graphite material forming device comprises a base, wherein a bottom die is fixed at the top of the base through bearing plates, guide posts are arranged on two sides of the bottom die, lifting plates driven by a hydraulic mechanism are arranged at the upper ends of the guide posts, a die holder is arranged at the bottom of the lifting plates at the upper ends of the guide posts, a rotary circular plate driven by a rotator is arranged in the lower end of the die holder, a main pressing block is arranged at the center of the bottom of the rotary circular plate, a plurality of guide blocks are driven to encircle through guide rail grooves, and dynamic pressure components consisting of regulators and auxiliary pressing blocks are arranged at the bottoms of the guide blocks. Preferably, guide shafts which are horizontally distributed are arranged in the guide rail grooves of the rotary circular plate, and the guide blocks are movably sleeved outside the guide shafts. Preferably, the auxiliary pressing blocks are of arc-shaped structures with the same size, and the outer walls of the auxiliary pressing blocks are provided with pressure sensors. Preferably, a sealing ring is arranged on the outer wall of the edge of the rotary circular plate, and a sealing groove matched with the sealing ring is arranged in the lower end of the die seat. Preferably, the dynamic pressure components are arranged at the bottom of the rotary circular plate in six groups, and the dynamic pressure components uniformly surround the periphery of the main pressing block. Preferably, a connecting seat is welded and fixed at the bottom of the lifting plate at the upper end of the guide post, and an embedded plate matched with the inner structure of the connecting seat is arranged at the top of the die seat. Compared with the prior art, the device for forming the isostatic pressing graphite material in the low ash semiconductor thermal field has the advantages that the yield and the product performance are improved, and the quality consistency and the reliability of graphite products with complex shapes or large sizes are ensured. The device drives the lifting plate to accurately adjust the position of the die holder through the hydraulic mechanism at the upper end of the guide post, combines the main pressing block at the bottom of the rotary circular plate controlled by the rotator to apply main pressure to the graphite material, and utilizes the dynamic pressure component consisting of a plurality of guide blocks, a regulator arranged below the guide blocks and auxiliary pressing blocks to realize multi-point uniform pressure application, thereby effectively solving the problem of uneven pressure distribution caused by the traditional single pressure source, improving the flexibility and adaptability in the manufacturing process, and obviously reducing the conditions of cracks or inconsistent density of products. Drawings FIG. 1 is a schematic diagram of