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CN-224227174-U - IBE ion beam etching device convenient to maintain

CN224227174UCN 224227174 UCN224227174 UCN 224227174UCN-224227174-U

Abstract

The utility model provides an IBE ion beam etching device convenient to maintain, which comprises a cavity body, wherein a target material is arranged in the cavity body, a carrying table mechanism is arranged above the target material and connected with the cavity body through a rotary driving mechanism, a wafer substrate to be coated is arranged on the carrying table mechanism, a first access door is arranged on one side of the cavity body in a connecting mode, a second access door is arranged on the other side of the cavity body in a connecting mode and positioned on the opposite side of the first access door, the first access door and the second access door are both hinged to the cavity body through hinges, a first mounting hole is arranged at the lower portion of the first access door, a first ion source is connected with the first mounting hole, a second mounting hole is arranged at the upper portion of the second access door, the second ion source is connected with the second mounting hole, when the first ion source or the second ion source breaks down, maintenance is performed by opening the corresponding first access door or the second access door, and the maintenance efficiency is greatly improved through the arrangement of the first access door and the second access door.

Inventors

  • Request for anonymity

Assignees

  • 苏州佑伦真空设备科技有限公司

Dates

Publication Date
20260512
Application Date
20250507

Claims (10)

  1. 1. The IBE ion beam etching device convenient to maintain comprises a cavity body (10), a target (20) is connected and arranged in the cavity body (10), a carrier mechanism (30) is arranged above the target (20), the carrier mechanism (30) is connected with the cavity body (10) through a rotary driving mechanism, the rotary driving mechanism drives the carrier mechanism (30) to adjust the angle, a wafer substrate to be coated is arranged on the carrier mechanism (30), a first ion source (40) is arranged on one side of the cavity body (10), a second ion source (50) is arranged on the other side of the cavity body, and the IBE ion beam etching device is characterized in that a first access door (60) is arranged on one side of the cavity body (10) in a connection mode, a second access door (70) is arranged on the other side of the cavity body (10) in a connection mode and is located on the opposite side of the first access door (60), the first access door (60) and the second access door (70) are hinged with the cavity body (10) through hinges (80), a first ion source (40) is arranged on the lower portion of the cavity body (30), a first access door (100) is connected with a second access door (100) and a first access door (100) is arranged on the second access door (100), when the first ion source (40) or the second ion source (50) fails, maintenance is performed by opening the corresponding first access door (60) or second access door (70).
  2. 2. The IBE ion beam etching device convenient to maintain according to claim 1, wherein a plurality of pressing blocks (110) are arranged at abutting edges of the two sides of the cavity body (10) and the first access door (60) or the second access door (70), the pressing blocks (110) are L-shaped, the inner side of one end of each pressing block (110) is buckled at the edge of the first access door (60) or the second access door (70), and the other end of each pressing block (110) is connected with the side edge of the cavity body (10) through bolts, so that the cavity body (10) is good in sealing performance.
  3. 3. The IBE ion beam etching apparatus according to claim 2, wherein a switch sensor (120) is further disposed at an abutting edge of the cavity body (10) and the first access door (60) or the second access door (70) for monitoring a sealing state of the first access door (60) or the second access door (70).
  4. 4. The IBE ion beam etching apparatus according to claim 2, wherein a bottom surface (130) is provided on a side of the press block (110) close to the chamber body (10), the bottom surface (130) is a horizontal surface, one end of the bottom surface (130) far from the first access door (60) or the second access door (70) is provided with a bump (140) extending toward the chamber body (10), when the first access door (60) and the second access door (70) are installed and the chamber body (10) is not evacuated, the bottom surface (130) is close to the first access door (60) or the second access door (70) and is in a gap with the chamber body (10) because the first access door (60) and the second access door (70) are not sucked, and when the first access door (60) and the second access door (70) are installed and the chamber body (10) is evacuated, the bottom surface (60) is not sucked up again because the first access door (60) and the second access door (70) are not sucked up, the first access door (60) or the second access door (70) is pressed by the allowance of the projection (140).
  5. 5. The IBE ion beam etching apparatus according to claim 4, wherein the bump (140) has a margin size of 2-3mm.
  6. 6. The IBE ion beam etching device convenient to maintain according to claim 4, wherein a groove (150) is formed in the bottom plate of the cavity body (10) close to the pressing block (110), and the groove (150) is used for giving way when the pressing block (110) is installed, so that the device is convenient to install.
  7. 7. The IBE ion beam etching apparatus according to claim 1, wherein a third mounting opening (160) is provided in the first access door (60) and/or the second access door (70) for facilitating the subsequent assembly or disassembly of the components.
  8. 8. The IBE ion beam etching apparatus of claim 7, wherein the first access door (60) and/or the second access door (70) are/is provided with a fourth mounting opening (170) for mounting an ion source neutralizer for attracting and neutralizing unwanted charged ions in the first ion source (40) and the second ion source (50), thereby protecting stable operation of the apparatus.
  9. 9. The IBE ion beam etching device convenient to maintain according to claim 8, wherein an observation window (180) is connected to the first access door (60) and/or the second access door (70) and is used for observing the state of a film coating, a baffle plate is arranged in the observation window (180), a first handle (190) is arranged on the observation window (180), one end of the first handle (190) is connected with the baffle plate, the baffle plate is used for isolating a film material and protecting glass of the observation window (180), and the baffle plate is driven to move by the up-down rotation of the first handle (190).
  10. 10. The IBE ion beam etching apparatus according to claim 9, wherein the first access door (60) and the second access door (70) are connected with a second handle (200) for opening or closing the first access door (60) and the second access door (70).

Description

IBE ion beam etching device convenient to maintain Technical Field The utility model belongs to the technical field of vacuum evaporation coating machines, and particularly relates to an IBE ion beam etching device convenient to maintain. Background Ion Beam Etching (IBE) is one of the semiconductor etching processes, mainly physical etching, and utilizes low-energy parallel ion beams to bombard the surface of a substrate according to a sputtering principle, and the material on the surface, which is not covered by a mask, is sputtered out, so that the purpose of etching is achieved, and the IBE is mainly used for preparing micro patterns in the fields of integrated circuits, components, sensors and the like. The common ion beam etching adopts inert gas ions such as Ar+ and belongs to pure physical etching, so that any material can be etched, the three-dimensional mask pattern can be transferred into the three-dimensional pattern on the surface of the substrate with high fidelity, and the Reactive Ion Beam Etching (RIBE) is etching by introducing reactive gas to form reactive ions. Ion beam etching belongs to an atomic level processing means, particularly Ar+ etching has no lateral corrosion, has top etching resolution, can theoretically etch structures with a plurality of atomic sizes, and can realize excellent etching uniformity. In the prior art, some devices are provided with double ion sources, because of the limitation of the space layout of the devices, the ion sources are distributed on the same side or two sides, if the ion sources are distributed on two sides, the ion sources are inevitably in fault under long-time operation and work, and the ion sources need to be maintained. Disclosure of utility model Therefore, in order to solve the above technical problems, the present utility model provides an IBE ion beam etching apparatus convenient for maintenance, which comprises a cavity body 10, wherein a target 20 is connected in the cavity body 10, a carrier mechanism 30 is arranged above the target 20, the carrier mechanism 30 is connected with the cavity body 10 through a rotation driving mechanism, the rotation driving mechanism drives the carrier mechanism 30 to adjust an angle, a wafer substrate to be coated is arranged on the carrier mechanism 30, a first ion source 40 is arranged on one side of the cavity body 10, a second ion source 50 is arranged on the other side of the cavity body 10, a first access door 60 is connected on one side of the cavity body 10, a second access door 70 is connected on the other side of the cavity body 10 and is positioned on the opposite side of the first access door 60, both the first access door 60 and the second access door 70 are hinged with the cavity body 10 through hinges 80, a first mounting hole 90 is arranged at the lower part of the first door 60, a first ion source 40 is connected with the first mounting hole 90, a second ion source 50 is arranged on the other side of the cavity body 10, a second ion source 50 is connected with the second ion source 70 or the second access door 70 is connected with the second ion source 60 through a second ion source 70, and the second access door 70 is not connected with the first access door 60 or the second access door 60 is opened, and the first access door is convenient and the second access door is opened. The utility model provides an IBE ion beam etching device convenient to maintenance, includes cavity body 10, cavity body 10 is connected to be equipped with target 20, the top of target 20 is equipped with carrier mechanism 30, carrier mechanism 30 pass through rotary driving mechanism with cavity body 10 is connected, rotary driving mechanism drives carrier mechanism 30 angle of adjustment, be equipped with on the carrier mechanism 30 and wait to coat the wafer substrate, one side of cavity body 10 is equipped with first ion source 40, and the opposite side is equipped with second ion source 50, one side of cavity body 10 is connected and is equipped with first access door 60, the opposite side that is equipped with second access door 70 and is located first access door 60 is connected to the opposite side of cavity body 10, first access door 60 with second access door 70 all with cavity body 10 passes through hinge 80 and articulates, the lower part of first access door 60 is equipped with first installation mouth 90, first ion source 40 with first installation mouth 90 is connected, the upper portion of second door 70 is equipped with first ion source 40, second ion source 100 when second ion source 50 or second ion source 50 are opened in the time of opening the second ion source 50. Further, a plurality of pressing blocks 110 are arranged at the abutting edges of the two sides of the cavity body 10 and the first access door 60 or the second access door 70, the pressing blocks 110 are in an L shape, the inner side of one end of each pressing block 110 is buckled at the edge of the first access door 60 or th