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CN-224227181-U - Correction structure for improving thickness uniformity of ZnS film grown by magnetron sputtering

CN224227181UCN 224227181 UCN224227181 UCN 224227181UCN-224227181-U

Abstract

The utility model relates to a correction structure for improving thickness uniformity of ZnS film grown by magnetron sputtering, which comprises an anode cover gasket, a bracket, a molybdenum sheet and a balancing weight, wherein the anode cover gasket is a plane circular ring, the outer ring diameter of the anode cover gasket is consistent with that of the anode cover and can cover the anode cover, the inner ring of the anode cover gasket does not shade a target, the molybdenum sheet is positioned above the circular ring of the anode cover gasket, the area of the molybdenum sheet accounts for 2.5% -7% of the area of the target, a small hole is punched at the intersection point of the center of the long side and the short side 1/4 of the molybdenum sheet and is used as a through hole for connecting a screw with a bracket arranged longitudinally, the balancing weight is symmetrically welded to the anode cover gasket, one of the balancing weight is used for adjusting balance of the anode cover gasket, the center of the other balancing weight is provided with a through hole which is used as a bracket through hole, and a screw hole is machined at the center of a surface adjacent to the horizontal plane. The utility model can realize that the non-uniform thickness performance of the ZnS passivation film is better than +/-2.5%.

Inventors

  • Gui Xihuan
  • WANG JIALONG
  • Jiang Baiqi
  • WANG XUESONG
  • ZHANG WENYU
  • YANG YIHU
  • JIANG JUN
  • Li Diemin
  • CHEN YONG
  • Fang Hanhao
  • ZHU JIN

Assignees

  • 昆明物理研究所

Dates

Publication Date
20260512
Application Date
20250514

Claims (10)

  1. 1. The correction structure for improving the thickness uniformity of the ZnS film grown by magnetron sputtering is characterized by comprising an anode cover gasket (1), a bracket (2), a molybdenum sheet (3) and a balancing weight (4); The anode cover gasket (1) is a plane circular ring, the diameter of the outer ring of the anode cover gasket is consistent with that of the anode cover, the anode cover gasket can cover the anode cover, and the inner ring of the anode cover gasket does not cover the target; The molybdenum sheet (3) is positioned above the circular ring of the anode cover gasket (1), the area of the molybdenum sheet accounts for 2.5% -7% of the area of the target material, and a small hole is formed in the molybdenum sheet (3) and is used as a through hole for connecting a screw with the longitudinally arranged bracket (2); the balancing weight (4) is two, symmetrically welded to the anode cover gasket (1), one of the balancing weights is used for adjusting the balance of the anode cover gasket (1), the center of the horizontal plane of the other balancing weight is provided with a through hole which is used as a through hole of the support (2), a screw hole is formed in the center of the surface adjacent to the horizontal plane, the support (2) is fixed by tightening a screw in the screw hole, and the height of the support (2) can be adjusted by loosening the screw.
  2. 2. The correction structure according to claim 1, characterized in that: The support (2) is welded together by two rods, one thicker rod is connected with the anode cover gasket (1), one end of the thicker rod is bent to 90 degrees, the fixing of the support depends on the extrusion of screws, the other rod connected with the bent end of the thicker rod is used as a supporting body of the molybdenum sheet (3), a screw hole is formed in the middle of the supporting body, and the screw hole is used as a through hole for fixing the molybdenum sheet (3) and the support (2) through screw connection.
  3. 3. The correction structure according to claim 1, characterized in that: The small holes on the molybdenum sheet (3) are positioned at the intersection point of the center of the long side and 1/4 of the short side of the molybdenum sheet (3).
  4. 4. The correction structure according to claim 1, characterized in that: the bracket (2) is made of stainless steel bars.
  5. 5. The correction structure according to claim 4, characterized in that: The size of one thicker bracket (2) is phi 3 mm-phi 5mm, and the size of the other thicker bracket is phi 1.5 mm-phi 2.5mm.
  6. 6. The correction structure according to claim 1, characterized in that: The height of the molybdenum sheet (3) is adjusted through the support (2), so that the molybdenum sheet (3) is positioned between a cathode dark area and a target material without influencing glow discharge.
  7. 7. The correction structure according to claim 6, characterized in that: the ratio of the height of the molybdenum sheet (3) to the target base distance is 3:11-6:11.
  8. 8. The correction structure according to any one of claims 1-7, characterized in that: The anode cover gasket (1) and the balancing weight (4) are made of stainless steel or molybdenum.
  9. 9. The correction structure according to any one of claims 1-7, characterized in that: The thickness of the anode cover gasket (1) is 0.5 mm-2.5 mm, and the width of the anode cover gasket is 15 mm-30 mm.
  10. 10. The correction structure according to any one of claims 1-7, characterized in that: The thickness of the molybdenum sheet (3) is 1 mm-3 mm.

Description

Correction structure for improving thickness uniformity of ZnS film grown by magnetron sputtering Technical Field The utility model belongs to the field of infrared focal plane detection, and particularly relates to a correction structure for improving thickness uniformity of ZnS thin films grown by magnetron sputtering. Background At present, hg 1-xCdx Te is still the most excellent main stream detector material as a core material of a third-generation detector, and detection from short wave to long wave and very long wave is realized by adjusting the size of a Cd component x. MCT belongs to a narrow bandgap semiconductor and dark current is a key factor in suppressing its performance. The high-quality passivation film can reduce the influence of surface states and interface states on the performance of the device. ZnS is used as a high dielectric layer film, so that the chip can be effectively protected from external electric signals, moisture and the like, and in the double-layer passivation process of CdTe/ZnS, the ZnS film can effectively reduce the influence of a slow interface state on the chip. The ZnS film in the double-layer passivation film is a high dielectric layer, can isolate the influence of external carriers to a certain extent, can effectively capture and release carriers generated in the inside of the chip under the working voltage, and reduces the offset of the energy band tail. Meanwhile, znS can isolate signal interference among pixels to a certain extent and metal atom diffusion for chips with small pixel spacing. The uniformity of ZnS thickness can affect subsequent photolithography, hole etching, ion implantation, metal, etc., ultimately resulting in a significant impact on device performance. The poor uniformity of the ZnS thickness not only affects the process of the ZnS film, but also causes uneven stress, is easily subjected to film bursting and the like due to the influence of external factors, and can also increase the difficulty of the subsequent process. The deposition mode of ZnS passivation film in MCT chip is mainly radio frequency magnetron sputtering, because the magnetic field of the device is distributed in an inner-outer annular shape, the direction of the magnetic induction line on the surface of ZnS target is that electrons are emitted from the center of ZnS target to the edge of the target, so that electrons are restrained in the middle area of the magnetic induction line to do spiral motion, and the probability of collision with Ar+ also presents cosine distribution to a certain extent along with the magnetic field distribution. Finally, etching channels appear on the surface of the target, the sputtering atomic or atomic group rate on the surface of the target is inconsistent, the non-uniformity of the thickness of the film layer deposited on the substrate is more obvious, and the eccentric angle of the target and the substrate is 30-60 degrees, so that the thickness difference between the middle and the edge of the sample disk is more than 5%, and the passivation process of the ZnS film process can not meet the chip process requirement. Currently, the chip size of the infrared detector is greatly developed, for example, 2k×2k,4k×4k, and the like, and the thickness uniformity of the ZnS film grown by magnetron sputtering cannot meet the process requirements. Disclosure of utility model Aiming at the problem that the uniformity of the thickness of ZnS passivation film grown by magnetron sputtering can not meet the current technical requirement, the utility model provides a correction structure for improving the uniformity of the thickness of ZnS thin film grown by magnetron sputtering, which can effectively improve the uniformity of the thickness of ZnS passivation film without influencing the glow discharge and plasma characteristics of the magnetron sputtering, and the correction structure has simple manufacturing method and is suitable for equipment for preparing the ZnS passivation film by magnetron sputtering, and mainly comprises five parts of an anode cover gasket, a bracket, a molybdenum sheet, a balancing weight and a screw; Further, the anode cover gasket is a plane circular ring, the thickness of the anode cover gasket is 0.5 mm-2.5 mm, the width of the anode cover gasket is 15 mm-30 mm, the diameter of the outer ring is consistent with that of the anode cover and can cover the anode cover, and the inner ring cannot cover the target; Further, the support is used for adjusting the height of the molybdenum sheet of the correction plate, so that the molybdenum sheet is positioned between a cathode dark area and a target material and does not influence glow discharge, the ratio of the height of the molybdenum sheet to the target base distance is 3/11-6/11, the support is welded together by two stainless steel rods, the thicker stainless steel rod is connected with an anode cover gasket, the size is phi 3 mm-phi 5mm, one end of the support is bent to 90 deg