CN-224227196-U - PVD vacuum chamber with broken sky flow equalizing structure

Abstract

The utility model relates to the field of vacuum coating equipment, and discloses a PVD vacuum chamber with a broken air flow equalizing structure. The flow equalizing structure comprises a first cavity mask, a second cavity mask, a broken air flow equalizing mask and a guide plate. The first cavity shade and the second cavity shade cover the upper parts of the channels on the front side, the rear side and the two sides of the cavity respectively, the air breaking flow equalizing shade is vertically arranged on the second cavity shade, and the air breaking flow equalizing shade, the inner wall of the wall body and the air breaking flow equalizing shade form an air ventilation cavity for guiding air below the carrier plate to the upper part of the carrier plate. The air-breaking flow-equalizing shielding cover is provided with a plurality of flow-equalizing holes, the guide plate is a bent plate which is turned downwards, the guide plate is arranged on the air-breaking flow-equalizing shielding cover and is positioned above a gap between the carrier plate and the inner wall of the cavity body, and the guide plate is turned over at an angle a of 155-165 degrees and used for guiding most air flow in the flow-equalizing holes to the upper part of the carrier plate. Through setting up broken sky flow equalizing structure to reduce the broken piece rate of falling of silicon chip, thereby promote the yield of product.

Inventors

• LAI LIMING
• HUANG ZHIWEI
• LIU YIJUN

Assignees

• 福建省金石能源股份有限公司

Dates

Publication Date

20260512

Application Date

20250529

Claims (3)

1. 1. The PVD vacuum chamber with the air breaking and flow equalizing structure comprises a chamber body, a door plate and a ventilation angle valve, wherein the door plate is arranged above the chamber body, a carrier plate used for loading battery pieces is arranged in the chamber body, the ventilation angle valve is communicated with the bottom of the chamber body and used for conveying the air breaking body into the chamber body, and the PVD vacuum chamber is characterized in that the chamber body is internally provided with the flow equalizing structure which comprises a first chamber shade, a second chamber shade, an air breaking and flow equalizing shade and a guide plate, the first chamber shade and the second chamber shade are positioned below the carrier plate, and the air breaking and flow equalizing shade and the guide plate are positioned above the carrier plate; The air flow homogenizing device is characterized in that an air channel is arranged at the bottom of the cavity, an air angle valve is arranged on the air channel, a first cavity shade and a second cavity shade are respectively arranged above the channels on the front side, the rear side and the two sides of the cavity, an air flow homogenizing shade is vertically arranged on the second cavity shade and forms an air flow cavity for guiding air below the carrier plate to the upper side of the carrier plate together with the inner wall of the wall body and the air flow homogenizing shade, a plurality of air flow homogenizing holes are formed in the air flow homogenizing shade, the air flow deflector is a bent plate which is turned down and is arranged on the air flow homogenizing shade and is positioned above a gap between the carrier plate and the inner wall of the cavity and used for guiding most air flow in the air flow homogenizing holes to the upper side of the carrier plate, and the angle a of turning over of the air flow deflector is 155-165 degrees.
2. 2. The PVD vacuum chamber with the air-breaking flow-equalizing structure according to claim 1, wherein the air-breaking flow-equalizing mask is in a three-fold shape and comprises an L-shaped flow-equalizing plate and a flow-equalizing fixed plate for connecting the flow-equalizing plate and a second chamber mask, the flow-equalizing hole is arranged on the flow-equalizing plate, and the flow guide plate is fixed on the horizontal plane of the flow-equalizing plate.
3. 3. The PVD vacuum chamber with the air-breaking and flow-equalizing structure according to claim 1, wherein a transmission mechanism is arranged in the chamber, a conveying shaft of the transmission mechanism penetrates through a flow-equalizing fixed plate to be connected with slide rails on two sides of a carrier plate, and a plurality of baffle plates for blocking air-breaking gas from flowing out of the connection parts are arranged at the connection parts of the flow-equalizing fixed plate and the transmission mechanism.

Description

PVD vacuum chamber with broken sky flow equalizing structure Technical Field The utility model relates to the field of vacuum coating equipment, in particular to a PVD vacuum chamber with a broken air flow equalizing structure. Background In the production process of a silicon-based heterojunction solar cell, a physical vapor deposition (Physical Vapor Deposition, PVD) device is generally utilized to deposit a transparent conductive film (TCO) on amorphous silicon by using a PVD process, and in the working process of the vapor deposition device, a working chamber of the vapor deposition device needs to be adjusted to be in a vacuum state to assist in completing the film plating work. When the film plating is completed, the vacuum state in the working chamber needs to be released to transport the battery piece and perform the next operation, and therefore, the working chamber needs to be filled with air to release the vacuum state of the working chamber, which is called breaking vacuum. The continuous magnetron sputtering coating production line can continuously produce the required solar cell silicon wafer products in large batches. Because of the continuous production requirement, the first chamber of the coating section generally needs to be repeatedly broken. Particularly, at the tail end of a film plating section, when a cavity is broken and reaches a standard atmospheric pressure, a gate valve can be opened, and the silicon wafer can be conveyed out. When the air is broken, the rapid air flow can impact the silicon wafer, and when the air is thicker, the impact force can be resisted. In recent years, the rapid development of photovoltaic technology and the increasing demand of market on photovoltaic cells are increasing, in order to meet the market demand, photovoltaic production line equipment is more pursuing the large size and flaking of silicon wafers, which can reach about tens of micrometers, and along with the reduction of the thickness of a coated silicon wafer, the original structure can not bear the impact of broken air flow. The method is characterized in that the air charging valve is arranged in the middle or side position above the vacuum chamber, the air charging valve can comprise a slow air charging valve and a main air charging valve, the lower end of the valve is connected with an air inlet of a flange on the chamber through a vacuum pipeline in parallel, the lower end (vacuum side) of the air inlet is provided with an air isolating plate, the air isolating plate is fixed below the flange of the chamber through a screw, when the substrate carrier plate deposited by the process is conveyed into the wafer outlet chamber through a conveying roller, the air is firstly charged into the chamber through the slow air charging valve, then the slow valve is closed, the main air charging valve is opened, the air is rapidly charged into the chamber, and after the chamber is rapidly in an atmospheric state, the substrate carrier plate coated with the film is conveyed out of the wafer outlet chamber and enters the next working cycle. Before inflation, the vacuum chamber is in a vacuum state, the pressures on the upper side and the lower side of the carrier plate are the same, when inflation is started, gas firstly enters the vacuum chamber through the gas inlet gas isolation plate and diffuses to the periphery of the upper layer of the carrier plate, the gas in the area around the gas inlet is relatively dense, the gas in the area far away from the gas inlet is relatively sparse, meanwhile, the gas density of the lower layer of the carrier plate is greater than that of the lower layer of the carrier plate, gas molecules are unevenly distributed on the upper layer and the lower layer of the carrier plate, and the phenomenon that gas flows from the lower layer to the upper layer of the carrier plate can be formed. The carrier plate is large in size and thin, the positioning groove for stacking the substrates on the carrier plate is shallow and can reach a few tenths of a millimeter, upward flowing air flow easily jacks up the substrates, the substrates on the carrier plate are displaced, certain internal stress is generated on the substrates, the substrates can fall off from the carrier plate when serious, the phenomenon of transmission clamping stagnation occurs, and the requirement of a photovoltaic production line cannot be met. Disclosure of utility model The utility model aims to provide a PVD vacuum chamber with a broken air flow equalizing structure, and the broken air flow equalizing structure is arranged in the chamber so as to reduce the breakage rate of silicon chips on a carrier plate in the PVD vacuum chamber, thereby improving the yield of products. In order to achieve the above purpose, the present utility model adopts the following technical scheme: The utility model discloses a PVD vacuum chamber with a broken air flow equalizing structure, which comprises a chamber body, a door pla