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CN-224227201-U - MPCVD reaction cavity gas introduction device

CN224227201UCN 224227201 UCN224227201 UCN 224227201UCN-224227201-U

Abstract

The utility model discloses a gas introduction device for an MPCVD reaction cavity, which relates to the technical field of chemical vapor deposition, and is characterized in that in the process of connecting a gas input pipeline with a reaction gas source to output the reaction gas of the reaction gas source to the reaction cavity, a plurality of mutually independent gas input pipelines are connected to a static mixer, after a plurality of different types of reaction gases are statically mixed by the static mixer, primary mixed gas is output, and then the primary mixed gas is fully buffered and uniformly distributed through a buffer pressure stabilizing cavity by a porous distribution plate arranged in the static mixer, so that the air flow pulsation and the pressure fluctuation of the primary mixed gas are eliminated, and the uniform mixing and stable introduction of the reaction gas are realized by adopting the static mixer with a special structure, so that the quality uniformity and the performance uniformity of a deposited film are effectively improved, the stability of the gas flow and the state are ensured, and the stability and the repeatability of the deposition process are improved.

Inventors

  • Lian Taojie

Assignees

  • 河南芯蕾材料有限公司

Dates

Publication Date
20260512
Application Date
20250427

Claims (10)

  1. 1. An MPCVD reaction chamber gas introduction apparatus, comprising: the gas input pipeline is connected with a reaction gas source, and the output end of the gas input pipeline is used for outputting reaction gas of the reaction gas source; The input end of the static mixer is connected with a plurality of mutually independent gas input pipelines and is used for outputting primary mixed gas after carrying out static mixing on a plurality of different types of reaction gases output by the gas input pipelines; and the buffering pressure stabilizing cavity is connected with an outlet of the static mixer, a porous distribution plate is arranged in the buffering pressure stabilizing cavity and is used for enabling the primary mixed gas to be fully buffered and uniformly distributed through the porous distribution plate, and steady mixed gas is output to the reaction cavity after the air flow pulsation and pressure fluctuation of the primary mixed gas are eliminated.
  2. 2. The MPCVD reaction chamber gas introduction apparatus of claim 1, further comprising a gas introduction pipe provided between the buffer stabilizator and the reaction chamber for connecting the buffer stabilizator and the reaction chamber and inputting the steady-state mixed gas to the reaction chamber.
  3. 3. The MPCVD reaction chamber gas introduction apparatus of claim 2, further comprising a gas filter provided at the gas introduction pipe for filtering the steady-state mixed gas and outputting the filtered gas to the reaction chamber.
  4. 4. The MPCVD reactor chamber gas introduction apparatus of claim 3, further comprising a pressure sensor and a temperature sensor provided in the buffer stabilization chamber for detecting a gas pressure and a temperature of the steady-state mixed gas output to the reactor chamber.
  5. 5. The MPCVD reactor chamber gas introduction apparatus of claim 4, further comprising a gas distribution showerhead provided at an output end of the gas introduction tube, the gas distribution showerhead being provided with a plurality of uniformly distributed micro-spray holes for uniformly spraying the steady-state mixed gas into the reactor chamber.
  6. 6. The MPCVD reactor chamber gas introduction apparatus of claim 5, further comprising a mass flow meter disposed in the gas input conduit, a first flow adjustment valve and a second flow adjustment valve, the mass flow meter being disposed between the first flow adjustment valve and the second flow adjustment valve, the first flow adjustment valve being disposed upstream of the mass flow meter for coarse adjustment of the output gas flow of the gas input conduit, and the second flow adjustment valve being disposed downstream of the mass flow meter for fine adjustment of the output gas flow of the gas input conduit.
  7. 7. The MPCVD reactor chamber gas introduction apparatus of claim 6, further comprising a display connected to the mass flow meter, the first flow adjustment valve, the second flow adjustment valve, the pressure sensor, the temperature sensor for displaying flow information, coarse adjustment information, fine adjustment information, pressure information, and temperature information of the steady-state mixed gas in the gas introduction line.
  8. 8. The MPCVD reactor chamber gas introduction apparatus of claim 7, further comprising a PLC controller connected to the mass flow meter, the first flow rate adjustment valve, the second flow rate adjustment valve, the pressure sensor, and the temperature sensor, the PLC controller being configured to control an operation state of the first flow rate adjustment valve and the second flow rate adjustment valve according to an external command, current state information of the gas introduction line, and current gas information of the steady-state mixed gas.
  9. 9. The MPCVD reactor chamber gas introducing apparatus according to any one of claims 1 to 8, wherein the number of the static mixers is at least two, and a plurality of the static mixers are connected in series.
  10. 10. The MPCVD reaction chamber gas introduction apparatus of claim 9, wherein the static mixer is an SV-type static mixer, an SK-type static mixer, an SX-type static mixer, an SH-type static mixer, or an SL-type static mixer.

Description

MPCVD reaction cavity gas introduction device Technical Field The utility model relates to the technical field of chemical vapor deposition, in particular to a gas introduction device for an MPCVD reaction cavity. Background MPCVD (microwave plasma chemical vapor deposition) generates microwaves by a microwave source, and the reaction gas is excited into a plasma state by a microwave field. The plasma is an ionized gaseous substance composed of positive and negative ions generated by ionization of atoms and atomic groups of which some electrons are deprived. The substrate can be heated to a certain temperature by using the high temperature of the plasma, and the film deposition can be performed at the rate of micrometers per hour. In the MPCVD technique, uniform mixing of the reaction gases and efficient and stable introduction into the reaction chamber play a key role in the quality and growth efficiency of the deposited film. The existing gas mixing and introducing modes have various problems, such as nonuniform gas mixing, inconsistent chemical reaction in the reaction cavity, and great difference in thickness, composition and performance of deposited films. In addition, the gas introduction process is easily influenced by factors such as gas flow disturbance, pipeline resistance and the like, so that the gas flow is unstable, and the stability and repeatability of the deposition process are influenced. Therefore, how to achieve uniform gas mixing and improve deposition quality and efficiency of MPCVD is one of the working emphasis of those skilled in the art. Disclosure of utility model The utility model aims to provide a gas introduction device for an MPCVD reaction cavity, so as to realize uniform mixing of gases and stable and efficient introduction into the reaction cavity and improve the quality and growth efficiency of a deposited film. In order to solve the above technical problems, an embodiment of the present utility model provides an MPCVD reaction chamber gas introduction device, including: the gas input pipeline is connected with a reaction gas source, and the output end of the gas input pipeline is used for outputting reaction gas of the reaction gas source; The input end of the static mixer is connected with a plurality of mutually independent gas input pipelines and is used for outputting primary mixed gas after carrying out static mixing on a plurality of different types of reaction gases output by the gas input pipelines; And the buffering pressure stabilizing cavity is connected with an outlet of the static mixer, a porous distribution plate is arranged in the buffering pressure stabilizing cavity and is used for enabling the primary mixed gas to be sufficiently buffered and uniformly distributed through the porous distribution plate, so that the primary mixed gas is sufficiently buffered and uniformly distributed, and steady-state mixed gas is output to the reaction cavity after the air flow pulsation and pressure fluctuation of the primary mixed gas are eliminated. The device further comprises a gas inlet pipeline arranged between the buffer pressure stabilizing cavity and the reaction cavity, and the gas inlet pipeline is used for connecting the buffer pressure stabilizing cavity with the reaction cavity and inputting the steady mixed gas into the reaction cavity. The device further comprises a gas filter arranged on the gas ingress pipe and used for filtering the steady-state mixed gas and outputting the filtered steady-state mixed gas to the reaction cavity. The device also comprises a pressure sensor and a temperature sensor which are arranged in the buffer pressure stabilizing cavity and are used for detecting the gas pressure and the temperature of the steady-state mixed gas output to the reaction cavity. The gas distribution nozzle is provided with a plurality of uniformly distributed micro spray holes for uniformly spraying the steady-state mixed gas into the reaction cavity. The device comprises a gas input pipeline, a mass flowmeter, a first flow regulating valve and a second flow regulating valve, wherein the mass flowmeter is arranged between the first flow regulating valve and the second flow regulating valve, the first flow regulating valve is arranged at the upstream of the mass flowmeter and is used for roughly adjusting the output gas flow of the gas input pipeline, and the second flow regulating valve is arranged at the downstream of the mass flowmeter and is used for finely adjusting the output gas flow of the gas input pipeline. The device also comprises a display connected with the mass flowmeter, the first flow regulating valve, the second flow regulating valve, the pressure sensor and the temperature sensor, and the display is used for displaying flow information, coarse regulating information, fine regulating information, pressure information and temperature information of the steady-state mixed gas in the gas inlet pipeline. The system further comprises a PLC