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CN-224227209-U - Wafer heating device and semiconductor manufacturing equipment

CN224227209UCN 224227209 UCN224227209 UCN 224227209UCN-224227209-U

Abstract

The utility model relates to the technical field of semiconductors and discloses a wafer heating device and semiconductor manufacturing equipment, wherein the wafer heating device comprises a heating platform, a first heating unit and a second heating unit, a heating cavity is arranged in the heating platform, the first heating unit and the second heating unit are arranged in the heating cavity at intervals along a first direction, the first direction is a vertical direction, a minimum distance is arranged between one of the first heating unit and the second heating unit and the top surface of the heating platform along the first direction, and the minimum distance is smaller than 1/2 of the dimension of the heating platform along the first direction. According to the wafer heating device, the first heating unit and the second heating unit are arranged in the heating cavity, and the minimum distance between one of the first heating unit and the second heating unit and the top surface of the heating platform is smaller than 1/2 of the dimension of the heating platform along the first direction, so that the distance between the top surface of the heating platform and the heating unit is reduced, heat can be distributed more uniformly in the transmission process, and the uniformity of film deposition on the surface of a wafer is improved.

Inventors

  • Guo Tiaoyuan
  • XU KANGYUAN

Assignees

  • 成都高真科技有限公司

Dates

Publication Date
20260512
Application Date
20250611

Claims (10)

  1. 1. The wafer heating device is characterized by comprising a heating platform, a first heating unit and a second heating unit; The heating platform is used for bearing a wafer and heating the wafer, a heating cavity is defined in the heating platform, the first heating unit and the second heating unit are arranged in the heating cavity at intervals along a first direction, and the first direction is a vertical direction; along the first direction, one of the first heating unit and the second heating unit has a minimum distance from a top surface of the heating platform that is less than 1/2 of a dimension of the heating platform along the first direction.
  2. 2. The wafer heating apparatus of claim 1, wherein the heating platform comprises a base and a heating plate disposed on top of the base, the heating plate is configured to place the wafer, the first heating unit and the heating plate are disposed at intervals along the first direction, the first heating unit extends along a second direction, and the second direction is perpendicular to the first direction.
  3. 3. The wafer heating apparatus of claim 2, wherein the first heating unit comprises a plurality of first heating elements, the plurality of first heating elements being spaced apart along the second direction.
  4. 4. A wafer heating apparatus according to claim 3, wherein the spacing between adjacent ones of the first heating members is the same.
  5. 5. The wafer heating apparatus of claim 3, wherein the first heating unit further comprises a first heating rod coupled to the first heating member, the first heating rod configured to heat the first heating member.
  6. 6. The wafer heating apparatus of claim 2, wherein the second heating unit comprises a plurality of second heating elements, the plurality of second heating elements being spaced apart along the second direction.
  7. 7. The wafer heating apparatus of claim 6, wherein a spacing between two adjacent second heating elements is the same.
  8. 8. The wafer heating apparatus of claim 6, wherein the second heating unit further comprises a second heating rod coupled to the second heating member, the second heating rod configured to heat the second heating member.
  9. 9. The wafer heating apparatus of claim 2, wherein the first heating unit is disposed above the second heating unit in the first direction, the wafer heating apparatus further comprising a heat dissipation plate disposed between the heating plate and the first heating unit at intervals in the first direction, the heat dissipation plate extending in the second direction.
  10. 10. A semiconductor manufacturing apparatus comprising a chamber and the wafer heating device according to any one of claims 1 to 9, the wafer heating device being provided inside the chamber.

Description

Wafer heating device and semiconductor manufacturing equipment Technical Field The present utility model relates to the field of semiconductor technologies, and in particular, to a wafer heating apparatus and a semiconductor manufacturing device. Background This section provides merely background information related to the present disclosure and is not necessarily prior art. Plasma enhanced chemical Vapor Deposition (PECVD, plasma Enhanced Chemical Vapor Deposition) is a common thin film Deposition technique in semiconductor manufacturing. In the PECVD process, aluminum nitride heaters are widely used inside the process chamber to provide a uniform heating environment for the wafer. The relatively wide spacing of heater elements between the heater plates of existing heaters results in uneven heat transfer and temperature differences in different areas of the heater, thereby affecting the uniformity of thin film deposition on the wafer surface and thus affecting the performance and quality of the semiconductor device. Disclosure of utility model The utility model aims to at least solve the problem of temperature difference of a heater caused by wider spacing of heater elements. The aim is achieved by the following technical scheme: the first aspect of the utility model provides a wafer heating device, which comprises a heating platform, a first heating unit and a second heating unit; The heating platform is used for bearing a wafer and heating the wafer, a heating cavity is defined in the heating platform, the first heating unit and the second heating unit are arranged in the heating cavity at intervals along a first direction, and the first direction is a vertical direction. According to the wafer heating device, the first heating unit and the second heating unit are arranged in the heating cavity of the heating platform, the minimum distance between one of the first heating unit and the second heating unit and the top surface of the heating platform is smaller than 1/2 of the dimension of the heating platform along the first direction, the distance between the top surface of the heating platform and the heating unit is reduced, the local temperature deviation caused by the difference of heat conductivity is reduced, the heat can be distributed more uniformly in the transmission process, the uniformity of film deposition on the surface of the wafer is improved, and the performance and quality of a semiconductor device are ensured. In addition, the wafer heating device according to the present utility model may further have the following additional technical features: In some embodiments of the present utility model, the heating platform includes a base and a heating plate disposed on top of the base, the heating plate is used for placing the wafer, the first heating unit and the heating plate are disposed at intervals along the first direction, the first heating unit extends along a second direction, and the second direction is perpendicular to the first direction. In some embodiments of the utility model, the first heating unit includes a plurality of first heating elements, and the plurality of first heating elements are spaced apart along the second direction. In some embodiments of the utility model, the spacing between two adjacent first heating elements is the same. In some embodiments of the utility model, the first heating unit further comprises a first heating rod connected to the first heating member, the first heating rod being configured to heat the first heating member. In some embodiments of the utility model, the second heating unit includes a plurality of second heating members, and the plurality of second heating members are spaced apart along the second direction. In some embodiments of the utility model, the spacing between two adjacent second heating elements is the same. In some embodiments of the utility model, the second heating unit further comprises a second heating rod connected to the second heating member, the second heating rod being configured to heat the second heating member. In some embodiments of the present utility model, the first heating unit is disposed above the second heating unit along the first direction, and the wafer heating apparatus further includes a heat dissipation plate disposed between the heating plate and the first heating unit at intervals along the first direction, and the heat dissipation plate extends along the second direction. Another aspect of the present utility model provides a semiconductor manufacturing apparatus comprising a chamber and a wafer heating device as set forth in any one of the above, the wafer heating device being disposed inside the chamber. Drawings Various other advantages and benefits will become apparent to those of ordinary skill in the art upon reading the following detailed description of the preferred embodiments. The drawings are only for purposes of illustrating the preferred embodiments and are not to be construed as l