CN-224232637-U - Plasma confinement structure and plasma processing apparatus

Abstract

The utility model provides a plasma confinement structure and plasma processing equipment. In one embodiment, the plasma confinement structure comprises a first ring made of silicon-based material and provided with a first gas channel, a second ring connected to the downstream side of the first ring and provided with a second gas channel therein, wherein the second gas channel is communicated with the first gas channel, and a grounding ring connected to the downstream side of the second ring and grounded to the first ring. In another embodiment, the plasma confinement structure comprises a silicon-based confinement ring in which a gas channel is formed and both sides of the downstream side of the silicon-based confinement ring are grounded. The utility model is used for solving the problems that the service life of parts is low, coating materials are damaged and sputtering onto a wafer affects the process result in the existing plasma confinement structure.

Inventors

• YE RUBIN
• MA YUE
• WANG HONGQING
• FAN GUANGWEI

Assignees

• 中微半导体设备(上海)股份有限公司

Dates

Publication Date

20260512

Application Date

20250307

Claims (20)

1. 1. A plasma confinement structure, comprising: the first ring is made of silicon-based materials and is provided with a first gas channel; A second ring connected to a downstream side of the first ring, the second ring having a second gas passage formed therein, the second gas passage communicating with the first gas passage; And a ground ring connected to a downstream side of the second ring and grounding the first ring.
2. 2. The plasma confinement structure of claim 1, wherein said first ring has a plurality of slots extending therethrough along an axial direction thereof to form said first gas passage, and said second ring has a plurality of slots extending therethrough along an axial direction thereof to form said second gas passage.
3. 3. The plasma confinement structure of claim 1, wherein the first ring includes a set of concentric first ring bodies arranged at intervals in a radial direction thereof and a plurality of first radial connectors, an annular channel formed between adjacent first ring bodies being used as the first gas channel, a downstream side of the first ring bodies being fixedly connected with the plurality of first radial connectors; The second ring comprises a group of concentric second ring bodies and a plurality of second radial connecting pieces, the second ring bodies are arranged at intervals along the radial direction of the second ring bodies, an annular channel formed between every two adjacent second ring bodies is used as the second gas channel, and the downstream side of each second ring body is fixedly connected with the plurality of second radial connecting pieces; The outer side of the first radial connecting piece forms a first annular mounting part, and the first annular mounting part is fixedly connected with the second radial connecting piece.
4. 4. The plasma confinement structure of claim 1, wherein said first ring has a plurality of slots extending radially therethrough to form said first gas passage and said second ring has a plurality of slots extending radially therethrough to form said second gas passage.
5. 5. The plasma confinement structure of claim 1, wherein the first ring includes a set of concentric third rings disposed at intervals along an axial direction thereof and a plurality of first axial connectors, an annular channel formed between adjacent third rings being used as the first gas channel, a downstream side of the third ring being fixedly connected with the plurality of first axial connectors; The second ring comprises a group of concentric fourth ring bodies and a plurality of second axial connecting pieces, the fourth ring bodies are arranged at intervals along the axial direction of the second ring bodies, annular channels formed between the adjacent fourth ring bodies are used as the second gas channels, and the downstream side of each fourth ring body is fixedly connected with the plurality of second axial connecting pieces; The top of the first axial connecting piece forms a second annular mounting part which is fixedly connected with the second axial connecting piece.
6. 6. The plasma confinement structure of claim 1, wherein a first gasket is disposed between the second ring and the first ring, and a second gasket is disposed between the second ring and the ground ring, the first and second gaskets being configured to conduct heat and electricity.
7. 7. The plasma confinement structure of claim 6, wherein a contact area of said second ring with said first and second spacers is bare aluminum or anodized.
8. 8. The plasma confinement structure of claim 7, wherein the anodized layer has a thickness of 50 microns to 100 microns.
9. 9. The plasma confinement structure of claim 1, wherein a third spacer is disposed between the ground ring and the ground plane metal for conducting heat and electricity.
10. 10. The plasma confinement structure of claim 6, wherein said first gasket and said second gasket are configured as graphite wrapped aluminum core gaskets.
11. 11. The plasma confinement structure of claim 9, wherein said third gasket is configured as a graphite-wrapped aluminum core gasket.
12. 12. The plasma confinement structure of claim 1, wherein the first ring material is monocrystalline silicon or polycrystalline silicon or silicon oxide.
13. 13. The plasma confinement structure of claim 1, wherein the second ring material is a metal conductor.
14. 14. The plasma confinement structure of claim 13, wherein said second ring surface is provided with a corrosion resistant coating.
15. 15. The plasma confinement structure is characterized by comprising a silicon-based confinement ring, wherein a gas channel is formed in the silicon-based confinement ring, and two sides of the downstream side of the silicon-based confinement ring are grounded.
16. 16. The plasma confinement structure of claim 15, wherein the silicon-based confinement ring has a plurality of slots extending therethrough along an axial direction thereof to form the gas channel.
17. 17. The plasma confinement structure of claim 15, wherein the silicon-based confinement ring includes a plurality of concentric ring bodies disposed at radial intervals along the ring bodies and a plurality of radial connectors, annular channels formed between adjacent ring bodies serving as the gas channels, and downstream sides of the ring bodies being fixedly connected to the plurality of radial connectors.
18. 18. The plasma confinement structure of claim 15, wherein the silicon-based confinement ring has a plurality of slots extending radially therethrough to form the gas channel.
19. 19. The plasma confinement structure of claim 15, wherein the silicon-based confinement ring includes a plurality of concentric ring bodies disposed at intervals along an axial direction thereof and a plurality of axial connectors, an annular channel formed between adjacent ring bodies serving as the gas channel, and a downstream side of the ring bodies being fixedly connected to the plurality of axial connectors.
20. 20. The plasma confinement structure of claim 15, wherein both sides of the downstream side of the silicon-based confinement ring are grounded with a ring-shaped radio frequency gasket.

Description

Plasma confinement structure and plasma processing apparatus Technical Field The present utility model relates to the field of semiconductor devices, and in particular, to a plasma confinement structure and a plasma processing device. Background In plasma processing equipment, a plasma confinement structure needs to realize two functions, namely 1, confining plasma in a specific range to ensure plasma stability and reduce ion leakage and damage to a cavity, and 2, ensuring sufficient gas conduction rate to ensure timely discharge of reaction products under the confinement of ensuring plasma. The existing plasma confinement structure is divided into a gas confinement ring and a grounding ring, and the gas confinement ring and the grounding ring are both of aluminum-based structure and coating structure, so that in order to realize plasma confinement capacity, the gas confinement ring needs to maintain a certain capacitance to ground to form a plasma sheath layer on the surface of the structure for consuming ions and electrons passing through the gas confinement ring, and therefore the gas confinement ring needs to be combined with the grounding ring to realize plasma confinement. Because of the plasma sheath layer on the surface of the gas confinement ring, the surface of the gas confinement ring is etched to damage the coating, and damaged coating materials are sputtered onto the wafer to affect the process result. Disclosure of utility model The utility model aims to provide a plasma confinement structure and plasma processing equipment, which are used for solving the problems that the service life of parts is low, coating materials are damaged and sputtering onto a wafer affects the process result in the existing plasma confinement structure. In order to achieve the above object, the present utility model is realized by the following technical scheme: a plasma confinement structure, comprising: the first ring is made of silicon-based materials and is provided with a first gas channel; A second ring connected to a downstream side of the first ring, the second ring having a second gas passage formed therein, the second gas passage communicating with the first gas passage; And a ground ring connected to a downstream side of the second ring and grounding the first ring. Optionally, a plurality of slots penetrating along the axial direction of the first ring are formed in the first ring to form the first gas channel, and a plurality of slots penetrating along the axial direction of the second ring are formed in the second ring to form the second gas channel. Optionally, the first ring includes a group of concentric first ring bodies and a plurality of first radial connectors, the first ring bodies are arranged at intervals along the radial direction of the first ring bodies, an annular channel formed between adjacent first ring bodies is used as the first gas channel, and the downstream side of the first ring bodies is fixedly connected with the plurality of first radial connectors; The second ring comprises a group of concentric second ring bodies and a plurality of second radial connecting pieces, the second ring bodies are arranged at intervals along the radial direction of the second ring bodies, an annular channel formed between every two adjacent second ring bodies is used as the second gas channel, and the downstream side of each second ring body is fixedly connected with the plurality of second radial connecting pieces; The outer side of the first radial connecting piece forms a first annular mounting part, and the first annular mounting part is fixedly connected with the second radial connecting piece. Optionally, a plurality of slots penetrating along the radial direction of the first ring are formed in the first ring to form the first gas channel, and a plurality of slots penetrating along the radial direction of the second ring are formed in the second ring to form the second gas channel. Optionally, the first ring includes a group of third rings concentric and arranged at intervals along the axial direction of the third rings and a plurality of first axial connectors, an annular channel formed between adjacent third rings is used as the first gas channel, and the downstream side of the third rings is fixedly connected with the plurality of first axial connectors; The second ring comprises a group of concentric fourth ring bodies and a plurality of second axial connecting pieces, the fourth ring bodies are arranged at intervals along the axial direction of the second ring bodies, annular channels formed between the adjacent fourth ring bodies are used as the second gas channels, and the downstream side of each fourth ring body is fixedly connected with the plurality of second axial connecting pieces; The top of the first axial connecting piece forms a second annular mounting part which is fixedly connected with the second axial connecting piece. Optionally, a first gasket is arranged between the se