CN-224232638-U - Etching device and semiconductor processing equipment

CN224232638UCN 224232638 UCN224232638 UCN 224232638UCN-224232638-U

Abstract

The utility model provides an etching device and semiconductor processing equipment, which belong to the technical field of semiconductor manufacturing, wherein the etching device comprises a reaction cavity, a spray header is arranged in the reaction cavity, spray holes are formed in the spray header, detection elements are arranged on the spray header and/or the side wall of the reaction cavity, the detection elements comprise Wheatstone bridges, in the etching process of the etching device, polymers can be deposited on a resistor to be measured positioned in the reaction cavity, the deposition amount of the polymers on the resistor to be measured can be obtained through the resistance value of the resistor to be measured, when the deposition amount reaches a certain degree, workers can be reminded of timely cleaning the spray header and the inside of the reaction cavity, the problem that the spray holes are blocked by the polymers generated in the etching process in the cavity is avoided, and the problem that etching is uneven due to uneven air outlet of the spray header is reduced or avoided, and the fact that the polymers are accumulated to particles adhere to a wafer to influence the electric performance of a device, so that the yield is reduced is avoided.

Inventors

WANG QINGYAN
Jia Mingji
TAO XIANGXIAN

Assignees

芯恩（青岛）集成电路有限公司

Dates

Publication Date: 20260512
Application Date: 20250418

Claims (10)

1. An etching device, characterized in that: The device comprises a reaction cavity, wherein a spray header is arranged in the reaction cavity, spray holes are formed in the spray header, and detection elements are arranged on the spray header and/or the side wall of the reaction cavity; The detection element comprises a Wheatstone bridge, wherein the Wheatstone bridge comprises a first series circuit connected with a first known resistor and an adjustable resistor, a second series circuit connected with a second known resistor and a resistor to be measured, and a galvanometer connected with the first series circuit and the second series circuit; The resistance to be measured is arranged inside the reaction cavity, the resistance to be measured does not cover the spraying hole, and the first known resistor, the second known resistor and the adjustable resistor are arranged outside the reaction cavity.
2. The etching device of claim 1, wherein the reaction chamber comprises a top wall and a bottom wall which are arranged in parallel, the spray header is arranged on the top wall, the spray header is provided with a spray surface facing the bottom wall, and the resistor to be measured is arranged in the middle of the spray surface.
3. The etching apparatus according to claim 2, wherein the side walls for enclosing the accommodation space are provided between the top wall and the bottom wall, the side walls enclose a square accommodation space, and the resistance to be measured of the detecting element is provided on the opposite side walls.
4. The etching device according to claim 2, wherein the resistor to be measured is provided at a position close to an edge in a longitudinal direction of the shower surface.
5. The etching apparatus according to claim 4, wherein: The width of the resistor to be measured is smaller than one third of the interval between the adjacent spraying holes.
6. An etching apparatus according to any one of claims 1 to 5, wherein: The circuit between the first known resistor and the adjustable resistor is provided with a first connection point, the circuit between the second known resistor and the resistor to be measured is provided with a second connection point, the galvanometer is arranged on the circuit connecting the first connection point and the second connection point, and the resistance values of the first known resistor and the second known resistor are the same.
7. The etching apparatus of claim 6, wherein a plasma generator is disposed in the reaction chamber.
8. The etching apparatus according to claim 7, wherein: and a first coating is arranged on the resistor to be measured, and the first coating is used for isolating plasma.
9. The etching apparatus according to claim 8, wherein: And a second coating is further arranged on the first coating of the resistor to be measured, and the second coating is used for increasing the adhesion rate of polymer in the reaction cavity.
10. A semiconductor processing apparatus comprising an etching device according to claim 1 to 9.

Description

Etching device and semiconductor processing equipment Technical Field The utility model belongs to the technical field of semiconductor manufacturing, and particularly relates to an etching device and semiconductor processing equipment. Background Etching is a significant step in semiconductor fabrication processes, microelectronic IC fabrication processes, and micro-nano fabrication processes. In some etching processes, particularly those involving high molecular weight compounds (e.g., for etching organic materials or photoresists), byproduct-polymers are formed during the plasma reaction. These resulting polymers may deposit on various components of the tool, particularly the showerhead surfaces above the reaction chamber. The shower head is used for uniformly distributing the reaction gas to cover the whole wafer surface, so that the etching uniformity is ensured. However, when polymer accumulates on the showerhead, a series of problems may arise, such as, for example, the flow path of the gas may be blocked or changed as the polymer gradually deposits on the gas holes or surfaces of the showerhead, which may result in uneven etching of the reactive gas being unevenly distributed to the wafer surface, and the polymer accumulating to a certain thickness may fall off into particles which may fall on the wafer surface, resulting in etching defects which may affect the electrical performance of the device, and in severe cases even result in reduced yield. Disclosure of utility model The utility model aims to provide an etching device and semiconductor processing equipment, which can solve the problems of uneven etching of a wafer and etching defects caused by accumulation of polymer particles due to polymer deposition on a spray header. In order to achieve the above purpose, the first aspect of the utility model provides an etching device, comprising a reaction cavity, wherein a spray header is arranged in the reaction cavity, spray holes are arranged on the spray header, and detection elements are arranged on the spray header and/or on the side wall of the reaction cavity; The detection element comprises a Wheatstone bridge, wherein the Wheatstone bridge comprises a first series circuit connected with a first known resistor and an adjustable resistor, a second series circuit connected with a second known resistor and a resistor to be measured, and a galvanometer connected with the first series circuit and the second series circuit; The resistance to be measured is arranged inside the reaction cavity, the resistance to be measured does not cover the spraying hole, and the first known resistor, the second known resistor and the adjustable resistor are arranged outside the reaction cavity. In an embodiment, the reaction chamber comprises a top wall and a bottom wall which are arranged in parallel, the spray header is arranged on the top wall, the spray header is provided with a spray face facing the bottom wall, and the resistor to be measured is arranged in the middle of the spray face. In an embodiment, the side walls for enclosing the accommodating space are disposed between the top wall and the bottom wall, the side walls enclose the square accommodating space, and the resistor to be measured of the detecting element is disposed on two opposite side walls. In an embodiment, the resistor to be measured is arranged at a position close to the edge in the length direction of the spraying surface. In one embodiment, the width of the resistor to be measured is less than one third of the spacing between adjacent shower holes. In an embodiment, a first connection point is formed on a circuit between the first known resistor and the adjustable resistor, a second connection point is formed on a circuit between the second known resistor and the resistor to be measured, and the galvanometer is arranged on a circuit connecting the first connection point and the second connection point, and the resistance values of the first known resistor and the second known resistor are the same. In one embodiment, a plasma generator is disposed within the reaction chamber. In one embodiment, a first coating is disposed on the resistor to be measured, the first coating being used to isolate the plasma. In an embodiment, a second coating is further disposed on the first coating of the resistor to be measured, the second coating being used to increase the adhesion rate of polymer in the reaction chamber. A second aspect of the utility model provides a semiconductor processing apparatus comprising an etching device as described above. According to the etching device provided by the utility model, in the etching process, polymers can be deposited on the resistor to be measured positioned in the reaction cavity, the resistance value of the resistor to be measured can be obtained when the Wheatstone bridge is balanced by adjusting the galvanometer, the deposition amount of the polymers on the resistor to be measured can be obtained throug