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CN-224232639-U - Semiconductor etching equipment

CN224232639UCN 224232639 UCN224232639 UCN 224232639UCN-224232639-U

Abstract

The utility model discloses semiconductor etching equipment, and belongs to the technical field of semiconductor manufacturing. The semiconductor etching equipment comprises a shell assembly, an upper electrode assembly, a lower electrode assembly, a radio frequency power supply, a vacuum pump and a film gauge, wherein the shell assembly is provided with a reaction cavity, the lower electrode assembly comprises an electrostatic chuck, the upper electrode assembly and the electrostatic chuck are arranged in the reaction cavity, the electrostatic chuck is arranged below the upper electrode assembly, the radio frequency power supply is connected to a mounting base through a radio frequency matcher, the electrostatic chuck is connected to the mounting base so as to conduct the electrostatic chuck and the radio frequency power supply, the vacuum pump is arranged at an exhaust port of the reaction cavity and is used for vacuumizing the reaction cavity, a detection head of the film gauge is arranged in the reaction cavity and is used for measuring the vacuum degree of the reaction cavity, and the film gauge can be heated to a preset temperature. The semiconductor etching equipment improves the measurement accuracy of the vacuum degree in the reaction cavity, and further ensures the etching effect of the wafer.

Inventors

  • WANG XIANLIANG
  • ZHANG HUIXIAN
  • YANG WENBIN
  • SUN WENBIN

Assignees

  • 无锡邑文微电子科技股份有限公司
  • 江苏邑文微电子科技有限公司

Dates

Publication Date
20260512
Application Date
20250424

Claims (10)

  1. 1. A semiconductor etching apparatus, comprising: A housing assembly provided with a reaction chamber (1A); The device comprises an upper electrode assembly (2) and a lower electrode assembly, wherein the lower electrode assembly comprises an electrostatic chuck (3), the upper electrode assembly (2) and the electrostatic chuck (3) are both arranged in a reaction cavity (1A), and the electrostatic chuck (3) is arranged below the upper electrode assembly (2); The radio frequency power supply is connected to the mounting base through a radio frequency matcher (20), and the electrostatic chuck (3) is connected to the mounting base so as to conduct the electrostatic chuck (3) with the radio frequency power supply; The vacuum pump (5) is arranged at the exhaust port of the reaction cavity (1A), and the vacuum pump (5) is used for vacuumizing the reaction cavity (1A); Bao Mogui (4), the detection head of film gauge (4) is located in reaction chamber (1A), is used for measuring the vacuum degree in reaction chamber (1A), film gauge (4) can heat to predetermineeing the temperature.
  2. 2. Semiconductor etching apparatus according to claim 1, characterized in that the radio frequency power supply comprises a first radio frequency power supply and a second radio frequency power supply, both of which can be connected alternatively or simultaneously with the electrostatic chuck (3).
  3. 3. The semiconductor etching apparatus according to claim 1, wherein a transmission gate (7), an upper liner (61) and a lower liner (62) are further provided in the reaction chamber (1A), a transmission port is provided between the upper liner (61) and the lower liner (62), the housing assembly is provided with a passage for transmitting wafers, the passage is communicated with the transmission port, the transmission gate (7) is used for opening and covering the transmission port, and a first sheathed heater (8) is provided at the bottom of the transmission gate (7).
  4. 4. A semiconductor etching apparatus according to claim 3, wherein the lower liner (62) is provided below the wafer, the lower liner (62) is provided with liner holes (621) uniformly arranged, and the lower liner (62) is provided upstream of the vacuum pump (5).
  5. 5. A semiconductor etching apparatus according to claim 1, further comprising a set of fluorine liquid apparatus for supplying a fluorine liquid to a flow channel of the cooling structure layer (22), the upper electrode assembly (2) comprising a mica heater (21) and a cooling structure layer (22).
  6. 6. The semiconductor etching apparatus according to claim 1, wherein an upper liner (61) is further provided in the reaction chamber (1A), the upper liner (61) is provided above the wafer, the upper liner (61) is provided with a second sheathed heater (9), and the second sheathed heater (9) is located on a side surface of the wafer projected on the upper liner (61).
  7. 7. Semiconductor etching apparatus according to claim 1, further comprising a pendulum valve (10) provided between the reaction chamber (1A) and the vacuum pump (5).
  8. 8. Semiconductor etching apparatus according to claim 1, characterized in that the electrostatic chuck (3) is divided into a central zone (31) and an edge zone (32) arranged around the central zone (31), the semiconductor etching apparatus being provided with two temperature control systems, the central zone (31) and the edge zone (32) being arranged in correspondence with the two temperature control systems.
  9. 9. The semiconductor etching apparatus according to claim 8, wherein the temperature control system comprises an optical fiber temperature sensor, a window (33) is provided at the bottom of the electrostatic chuck (3), and the optical fiber temperature sensor is provided outside the reaction chamber (1A) and is fixed to the window (33).
  10. 10. Semiconductor etching apparatus according to any of claims 1-9, further comprising a set of coolant apparatus, the housing assembly comprising a bottom shell (11) and a cover plate (12), the bottom shell (11) and the cover plate (12) forming the reaction chamber (1A), the cover plate (12) being provided with a cooling channel (121), the set of coolant apparatus being adapted to supply a coolant to the cooling channel (121).

Description

Semiconductor etching equipment Technical Field The utility model relates to the technical field of semiconductor manufacturing, in particular to semiconductor etching equipment. Background In the process of etching by using the semiconductor etching equipment, the air pressure change in the reaction cavity can influence the tightness and the temperature of plasma, so as to influence a thermal field, and further, the difference of etching rate can be caused, and the uniformity and the precision of etching are influenced. Therefore, the vacuum state in the reaction chamber needs to be monitored in real time, and the etching effect is prevented from being influenced due to pressure change. In the prior art, a vacuum pressure sensor is arranged in a reaction cavity and monitors pressure change in real time. However. The reaction chamber is filled with reaction sediment generated by plasma, and the reaction sediment can be attached to the vacuum pressure sensor, so that the measurement accuracy is influenced, and the etching effect of the wafer is influenced. Disclosure of utility model The utility model aims to provide semiconductor etching equipment, which improves the measurement accuracy of the vacuum degree in a reaction cavity and further ensures the etching effect of a wafer. To achieve the purpose, the utility model adopts the following technical scheme: A semiconductor etching apparatus, comprising: The shell assembly is provided with a reaction cavity; The upper electrode assembly and the lower electrode assembly comprise an electrostatic chuck, the upper electrode assembly and the electrostatic chuck are both arranged in the reaction cavity, and the electrostatic chuck is arranged below the upper electrode assembly; The radio frequency power supply is connected to the mounting base through the radio frequency matcher, and the electrostatic chuck is connected to the mounting base so as to conduct the electrostatic chuck with the radio frequency power supply; The vacuum pump is arranged at the exhaust port of the reaction cavity and is used for vacuumizing the reaction cavity; Bao Mogui, the detection head of the film gauge is arranged in the reaction cavity and used for measuring the vacuum degree of the reaction cavity, and the film gauge can be heated to a preset temperature. In some possible embodiments, the rf power source includes a first rf power source and a second rf power source, both of which can be alternatively or simultaneously connected to the electrostatic chuck. In some possible embodiments, a transmission door, an upper liner and a lower liner are further disposed in the reaction chamber, a transmission port is disposed between the upper liner and the lower liner, the housing assembly is provided with a channel for transmitting the wafer, the channel is communicated with the transmission port, the transmission door is used for opening and covering the transmission port, and a first armored heater is disposed at the bottom of the transmission door. In some possible embodiments, the lower liner is disposed below the wafer, the lower liner is provided with uniformly arranged liner holes, and the lower liner is disposed upstream of the vacuum pump. In some possible embodiments, further comprising a fluoride bath facility, the upper electrode assembly comprising a mica heater and a cooling structure layer, the fluoride bath facility for feeding a fluoride bath to the flow channels of the cooling structure layer. In some possible embodiments, an upper liner is further disposed in the reaction chamber, the upper liner is disposed above the wafer, and the upper liner is provided with a second armored heater, and the second armored heater is located on a side surface of the wafer, where the upper liner projects. In some possible embodiments, a pendulum valve is also included between the reaction chamber and the vacuum pump. In some possible embodiments, the electrostatic chuck is divided into a central area and an edge area arranged around the central area, the semiconductor etching device is provided with two temperature control systems, and the central area and the edge area are arranged corresponding to the two temperature control systems. In some possible embodiments, the temperature control system includes an optical fiber temperature sensor, a window is arranged at the bottom of the electrostatic chuck, and the optical fiber temperature sensor is arranged outside the reaction cavity and is fixed on the window. In some possible embodiments, the cooling liquid device unit further comprises a bottom shell and a cover plate, wherein the bottom shell and the cover plate form the reaction cavity, the cover plate is provided with a cooling channel, and the cooling liquid device unit is used for supplying cooling liquid to the cooling channel. The utility model has the beneficial effects that: The utility model provides a semiconductor etching device, which is characterized in that a film gauge