CN-224232641-U - Capacitively coupled plasma processing device

CN224232641UCN 224232641 UCN224232641 UCN 224232641UCN-224232641-U

Abstract

The utility model relates to the technical field of semiconductor processing, and discloses a capacitive coupling plasma processing device. The capacitive coupling plasma processing device comprises a spraying block, an electrode assembly, a quartz ring, a supporting ring and an upper cover, wherein the spraying block is communicated with a gas supply source, a spraying hole is formed in the lower portion of the spraying block, the electrode assembly is connected to the lower portion of the spraying hole of the spraying block, an air hole communicated with the spraying hole is formed in the electrode assembly, the quartz ring is arranged on the spraying block and used for bearing the spraying block, the supporting ring is arranged on the quartz ring and used for bearing the quartz ring, and the upper cover is connected to the top end of the supporting ring and located above the spraying block. The utility model ensures the stability of the plasma reaction and the normal operation of the electrode assembly, effectively limits the distribution of the plasma in the reaction area, reduces the corrosion and pollution risks of the plasma to the reaction chamber wall, prolongs the service life of the reactor parts, and ensures the stability and controllability of the etching process.

Inventors

ZHANG HUIXIAN
Dai Youyan
YANG WENBIN
SUN WENBIN

Assignees

无锡邑文微电子科技股份有限公司
江苏邑文微电子科技有限公司

Dates

Publication Date: 20260512
Application Date: 20250521

Claims (10)

1. A capacitively coupled plasma processing apparatus, comprising: the spraying block (1) is communicated with the air supply source, and a spraying hole is formed below the spraying block (1); An electrode assembly (2) connected below the spray holes of the spray block (1), the electrode assembly (2) being provided with air holes communicating with the spray holes; The quartz ring (3) is arranged on the spray block (1) in a surrounding manner, and the quartz ring (3) is used for bearing the spray block (1); The support ring (4) is arranged on the quartz ring (3) in a surrounding manner, and the support ring (4) is used for bearing the quartz ring (3); and the upper cover (5) is connected to the top end of the supporting ring (4) and is positioned above the spraying block (1).
2. The capacitively coupled plasma processing apparatus according to claim 1, wherein the electrode assembly (2) includes an inner electrode (21) and an outer electrode (22), the inner electrode (21) being connected to a side of the shower block (1) where the shower holes are provided, the inner electrode (21) being provided with air holes communicating with the shower holes; The outer electrode (22) is coaxially and annularly arranged on the periphery of the inner electrode (21).
3. The capacitively coupled plasma processing apparatus according to claim 2, further comprising a fastening assembly (6), the fastening assembly (6) comprising a first fixing ring (61) and a second fixing ring (62), the first fixing ring (61) being provided with a ring-shaped first lap joint (611), the first fixing ring (61) being looped around the inner electrode (21) and connected to the shower block (1), the inner electrode (21) being lap-jointed to the first lap joint (611); The second fixing ring (62) is provided with an annular second lap joint part (621), the second fixing ring (62) is annularly arranged on the outer electrode (22) and connected to one side, deviating from the spray block (1), of the first fixing ring (61), and the outer electrode (22) is lapped on the second lap joint part (621).
4. A capacitively coupled plasma processing apparatus according to claim 3, wherein the fastening member (6) further includes a first fastening screw (63) and a second fastening screw (64), the shower block (1) is provided with a stepped hole including a large diameter hole and a small diameter hole, a head portion of the first fastening screw (63) is polygonal, an inner wall shape of the large diameter hole is matched with a head shape of the first fastening screw (63), the first fixing ring (61) is provided with a through hole, a shaft portion of the second fastening screw (64) is provided with a screw hole, a head portion of the first fastening screw (63) is embedded in the large diameter hole, and a shaft portion of the first fastening screw (63) is provided with the small diameter hole in a penetrating manner and is screwed to the screw hole.
5. The capacitively coupled plasma processing apparatus according to claim 4, wherein the fastening assembly (6) further includes a press block (65), the press block (65) being sealingly press-fitted to an end of the stepped bore facing away from the first fixing ring (61).
6. The capacitively coupled plasma processing apparatus according to claim 5, wherein the fastening assembly (6) further includes an insulating block (66) and an insulating spacer (67), the insulating block (66) being disposed between the pressing block (65) and the head of the first fastening screw (63), the insulating spacer (67) being disposed between the head of the first fastening screw (63) and the stepped surface of the stepped hole.
7. The capacitively coupled plasma processing apparatus according to claim 2, further comprising at least two first positioning pins (7), wherein the shower block (1) is provided with first positioning grooves corresponding to the first positioning pins (7), the inner electrode (21) is provided with second positioning grooves corresponding to the first positioning pins (7), and both ends of the first positioning pins (7) are respectively embedded in the first positioning grooves and the second positioning grooves, and/or The capacitive coupling plasma processing device further comprises at least two second locating pins (8), the quartz ring (3) is provided with a third locating groove corresponding to the second locating pins (8), the support ring (4) is provided with a fourth locating groove corresponding to the second locating pins (8), and two ends of the second locating pins (8) are respectively embedded in the third locating groove and the fourth locating groove.
8. The capacitively coupled plasma processing apparatus according to claim 2, further comprising a protective outer ring (9), the protective outer ring (9) being detachably connected to a bottom of the quartz ring (3).
9. The capacitively coupled plasma processing apparatus of claim 8, further comprising a plurality of clamping blocks (10), the clamping blocks (10) being connected to a bottom of the quartz ring (3), the clamping blocks (10) being provided with clamping protrusions (101); the protection outer ring (9) is provided with a plurality of joint portions along circumference interval, joint piece (10) with joint portion one-to-one, joint portion includes draw-in groove (93) and is located joint wall (91) of draw-in groove (93) top, joint wall (91) are provided with breach (92), protruding (101) of joint can be passed through breach (92) remove to the below of joint wall (91), rotate protection outer ring (9), so that protruding (101) of joint removes to in draw-in groove (93).
10. The capacitively coupled plasma processing apparatus according to claim 8, wherein the shower block (1) is in sealing connection with the quartz ring (3), and/or The quartz ring (3) and the support ring (4) are connected in a sealing manner and/or The inner electrode (21) is connected with the spraying block (1) in a sealing way.

Description

Capacitively coupled plasma processing device Technical Field The utility model relates to the technical field of semiconductor processing, in particular to a capacitive coupling plasma processing device. Background In semiconductor manufacturing, an etching process is a critical step for forming various circuit structures on a semiconductor wafer. Capacitively Coupled Plasma (CCP) etch reactors are widely used in this process to effect etching by ion bombardment of the wafer surface by applying a radio frequency voltage between an upper electrode and a lower electrode to energize a process gas into a plasma state. However, in the prior art, the problem that plasma diffuses to the side wall of the reaction cavity generally exists in the capacitively coupled plasma etching device, so that the corrosion of the inner wall of the cavity is serious, the running stability of equipment is affected, and higher maintenance frequency and cost are caused. The existing plasma etching device can form a plasma region, but cannot effectively restrict the distribution region, so that a process window is narrow, and uniformity is poor. Based on this, there is a need for a capacitively-coupled plasma processing apparatus that solves the above-mentioned problems. Disclosure of utility model Based on the above, the present utility model aims to provide a capacitively coupled plasma processing apparatus, which effectively restricts the distribution area of plasma, prevents the plasma from being randomly diffused to the wall surface of a reaction chamber, improves the stability and process controllability of the plasma, enlarges the process window, and improves the etching uniformity. In order to achieve the above purpose, the utility model adopts the following technical scheme: a capacitively coupled plasma processing apparatus, comprising: The spraying block is communicated with the air supply source, and a spraying hole is formed below the spraying block; The electrode assembly is connected to one side of the spray block, provided with the spray hole, and is provided with an air hole communicated with the spray hole; The quartz ring is arranged on the spray block in a surrounding manner and is used for bearing the spray block; The support ring is arranged on the quartz ring in a surrounding manner and is used for bearing the quartz ring; and the upper cover is connected to the top end of the supporting ring and is positioned above the spraying block. As a preferred technical scheme of the capacitive coupling plasma processing device, the electrode assembly comprises an inner electrode and an outer electrode, wherein the inner electrode is connected to one side of the spray block, which is provided with a spray hole, and the inner electrode is provided with an air hole communicated with the spray hole; the outer electrode is coaxially arranged on the periphery of the inner electrode. As a preferred technical solution of the capacitively coupled plasma processing apparatus, the capacitively coupled plasma processing apparatus further includes a fastening assembly, the fastening assembly includes a first fixing ring and a second fixing ring, the first fixing ring is provided with a first annular lap joint portion, the first fixing ring is annularly arranged on the inner electrode and connected to the spray block, and the inner electrode is lap-jointed on the first lap joint portion; the second fixed ring is provided with annular second overlap joint portion, the second fixed ring is encircled and is located the outer electrode and connect in the first fixed ring deviates from the one side of spray piece, the outer electrode overlap joint in on the second overlap joint portion. As a preferred technical scheme of capacitive coupling plasma processing apparatus, fastening assembly still includes first fastening screw and second fastening screw, the spray piece is provided with the shoulder hole, the shoulder hole includes major diameter hole and path hole, first fastening screw's head is the polygon, the inner wall shape in major diameter hole with first fastening screw's head shape assorted, first solid fixed ring is provided with the through-hole, second fastening screw's pole portion is provided with the screw hole, second fastening screw wears to locate the through-hole, first fastening screw's head inlays to be located in the major diameter hole, just first fastening screw's pole portion wears to locate path hole and threaded connection in the screw hole. As a preferred technical scheme of the capacitive coupling plasma processing apparatus, the fastening assembly further comprises a pressing block, and the pressing block is in sealing and pressing connection with one end of the stepped hole, which is away from the first fixing ring. As a preferable technical scheme of the capacitively coupled plasma processing apparatus, the fastening assembly further includes an insulating block and an insulating spacer, the insulating block