Search

CN-224232642-U - Wafer manufacturing device

CN224232642UCN 224232642 UCN224232642 UCN 224232642UCN-224232642-U

Abstract

The embodiment of the application provides a wafer manufacturing device which comprises a reaction cavity, a radio frequency side coil, an adapter, a cooling liquid pipeline and a cooling liquid pipeline, wherein the top of the reaction cavity is of a dome structure, the radio frequency side coil surrounds the outer wall of the dome structure and is used for enabling high-density plasma to be generated inside the reaction cavity, the radio frequency side coil is of a hollow pipeline, the adapter and the radio frequency side coil are of an integrated structure, the adapter is used for being connected with the cooling liquid pipeline, and the cooling liquid pipeline is used for introducing cooling liquid into the radio frequency side coil so as to enable the radio frequency side coil to dissipate heat. The embodiment of the application can reduce the machine shutdown risk caused by liquid leakage, thereby improving the performance of the wafer.

Inventors

  • LIANG ZHI

Assignees

  • 浙江创芯集成电路有限公司

Dates

Publication Date
20260512
Application Date
20250610

Claims (10)

  1. 1. A wafer manufacturing apparatus, comprising: the top of the reaction cavity is of a dome structure; The radio frequency side coil surrounds the outer wall of the dome structure and is used for enabling the inside of the reaction cavity to generate high-density plasma, wherein the radio frequency side coil is a hollow pipeline; The adapter is of an integrated structure with the radio frequency side coil and is used for being connected with a cooling liquid pipeline, and the cooling liquid pipeline is used for introducing cooling liquid into the radio frequency side coil so as to enable the radio frequency side coil to dissipate heat.
  2. 2. The wafer manufacturing apparatus according to claim 1, wherein the adapter is L-shaped.
  3. 3. The wafer manufacturing apparatus of claim 2, wherein the adapter is formed by bending a tube bending tool.
  4. 4. The wafer fabrication apparatus of claim 2, wherein the corner of the adapter has an angle in the range of 85 degrees to 95 degrees.
  5. 5. The wafer manufacturing apparatus according to claim 1, wherein the material of the rf side coil is copper or copper alloy.
  6. 6. The wafer manufacturing apparatus according to claim 4, wherein the material of the adapter is the same as the material of the rf side coil.
  7. 7. The wafer fabrication apparatus of claim 1, wherein a sealing device is provided at a junction of the adapter and the coolant conduit.
  8. 8. The wafer manufacturing apparatus according to claim 7, wherein the sealing means is a gasket or a packing.
  9. 9. The wafer manufacturing apparatus according to claim 7, further comprising: And the radio frequency power source is connected with the radio frequency side coil and is used for providing radio frequency energy for the radio frequency side coil.
  10. 10. The wafer fabrication apparatus of claim 1, wherein the dome structure material is ceramic.

Description

Wafer manufacturing device Technical Field The embodiment of the application relates to the technical field of semiconductors, in particular to a wafer manufacturing device. Background Plasma technology plays an important role in modern semiconductor fabrication, and typical applications include chemical dry etching (CHEMICAL DRY ETCHING, CDE), ion-assisted etching (Ion-ASSISTED ETCHING, IAE), and Plasma-enhanced chemical Vapor Deposition (PECVD). These processes typically introduce rf power through a high-density plasma rf side coil HDP RF SIDE coil to transfer energy to the reaction chamber to cause the interior of the reaction chamber to generate a high-density plasma for processing tasks such as material removal, surface treatment, or film deposition. However, the performance of the currently formed wafers is to be improved. Disclosure of utility model In view of the above, an embodiment of the present application provides a wafer manufacturing apparatus to improve the performance of a device. In order to achieve the above purpose, the embodiment of the present application provides the following technical solutions. The embodiment of the application provides a wafer manufacturing device, which comprises: the top of the reaction cavity is of a dome structure; The radio frequency side coil surrounds the outer wall of the dome structure and is used for enabling the inside of the reaction cavity to generate high-density plasma, wherein the radio frequency side coil is a hollow pipeline; The adapter is of an integrated structure with the radio frequency side coil and is used for being connected with a cooling liquid pipeline, and the cooling liquid pipeline is used for introducing cooling liquid into the radio frequency side coil so as to enable the radio frequency side coil to dissipate heat. Optionally, the adapter is L-shaped. Optionally, the adapter is formed by bending a pipe bending tool. Optionally, the angle of the corner of the adapter ranges from 85 degrees to 95 degrees. Optionally, the radio frequency side coil is made of copper or copper alloy. Optionally, the material of the adapter is the same as the material of the radio frequency side coil. Optionally, a sealing device is arranged at the joint of the adapter and the coolant pipeline. Optionally, the sealing device is a sealing ring or a sealing gasket. Optionally, the method further comprises: And the radio frequency power source is connected with the radio frequency side coil and is used for providing radio frequency energy for the radio frequency side coil. Optionally, the dome structure is made of ceramic. Compared with the prior art, the technical scheme of the embodiment of the application has the following advantages: The embodiment of the application provides a wafer manufacturing device which comprises a reaction cavity, a radio frequency side coil, an adapter and a cooling liquid pipeline, wherein the top of the reaction cavity is of a dome structure, the radio frequency side coil surrounds the outer wall of the dome structure and is used for enabling high-density plasma to be generated in the reaction cavity, the radio frequency side coil is of a hollow pipeline, the adapter and the radio frequency side coil are of an integrated structure, the adapter is used for being connected with the cooling liquid pipeline, and the cooling liquid pipeline is used for introducing cooling liquid into the radio frequency side coil so as to enable the radio frequency side coil to dissipate heat. It can be seen that, according to the wafer manufacturing device provided by the embodiment of the application, the adapter with the radio frequency side coil integrated structure is connected with the coolant pipeline, so that the phenomenon that liquid leakage occurs in operation due to the fact that the adapter is in a gap caused by expansion caused by heat and contraction caused by cold when the adapter is connected with the coolant pipeline in the prior art is avoided, the machine shutdown risk caused by liquid leakage is reduced, and the performance of the wafer is further improved. Drawings In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings that are required to be used in the embodiments or the description of the prior art will be briefly described below, and it is obvious that the drawings in the following description are only embodiments of the present application, and that other drawings can be obtained according to the provided drawings without inventive effort for a person skilled in the art. FIG. 1 is a schematic diagram of a wafer fabrication apparatus; Fig. 2 is a schematic diagram of an alternative structure of a wafer manufacturing apparatus according to an embodiment of the present application. Detailed Description The following description of the embodiments of the present application will be made clearly and fully with reference to the accompanying dra