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CN-224233134-U - 200Gbps CWDM EML laser

CN224233134UCN 224233134 UCN224233134 UCN 224233134UCN-224233134-U

Abstract

The utility model provides a 200Gbps CWDM EML laser, which consists of 4 sections of butt joint areas, specifically, a first butt joint area is formed by butt joint of a PQ waveguide and one end of a DFB laser diode, a second butt joint area is formed by butt joint of the other end of the DFB laser diode and an isolation area PQ waveguide, a third butt joint area is formed by butt joint of the isolation area PQ waveguide and one end of an EA modulator, a fourth butt joint area is formed by butt joint of the other end of the EA modulator and the PQ waveguide, the total 4 sections of butt joint areas are integrated on one EML laser, and the PQ waveguide, the DFB laser diode, the EA modulator are designed on the same ridge waveguide.

Inventors

  • WU LINFUSHENG
  • SU HUI
  • SHI WENZHEN
  • YANG ZHONGYING
  • GAO JIAMIN
  • GUO ZHIYONG

Assignees

  • 福建中科光芯光电科技有限公司

Dates

Publication Date
20260512
Application Date
20250424

Claims (5)

  1. 1. A200 Gbps CWDM EML laser is characterized in that the EML consists of 4 sections of butt joint areas, specifically, a first butt joint area is formed by butt joint of a PQ waveguide and one end of a DFB laser diode, a second butt joint area is formed by butt joint of the other end of the DFB laser diode and a PQ waveguide of an isolation area, a third butt joint area is formed by butt joint of the PQ waveguide of the isolation area and one end of an EA modulator, a fourth butt joint area is formed by butt joint of the other end of the EA modulator and the PQ waveguide, the DFB laser diode and the EA modulator are designed on the same ridge waveguide, and the total 4 sections of butt joint areas are integrated on one EML laser.
  2. 2. The CWDM EML laser of claim 1, wherein the DFB laser diode and the EA modulator are each configured with a PQ waveguide at one end, and a common isolation region PQ waveguide is configured between the DFB laser diode and the EA modulator, wherein the DFB length is 300-400um and the EA length is 50-150um.
  3. 3. The CWDM EML laser of claim 1, wherein the length of the PQ waveguide at one end of the DFB laser diode and the EA modulator is 15-30um.
  4. 4. The CWDM EML laser of claim 1, wherein the length of the PQ waveguide of the common isolation region between the DFB laser diode and the EA modulator is 30-80um.
  5. 5. The CWDM EML laser of claim 1, wherein the ridge waveguide has a width of 2.0-3.0um.

Description

200Gbps CWDM EML laser Technical Field The utility model relates to the technical field of high-speed EML lasers, in particular to a 200Gbps CWDM EML laser. Background Under the drive of market demands such as global AI calculation force increase and domestic east-west calculation engineering, the demands of the data center module continuously increase, and CAGR is about 10%. Particularly, a high-speed module of 400G/800G is a growing focus (about 1000-1500 kilopcs) for 3-5 years in the future. Mainly demanded by North America, domestic DC adopts following strategies. . From industry report information, the requirements of the 400G/800G high-end modules in China mainly come from Alibaba, temming, hundred degrees, byte jitter, huacheng and the like. The domestic data center is at least 1-2 years later than North America in the inter-generation switching. The total demand is estimated to be about 50 kilopcs (data which is more conservative) from the demand of 400G in 23 years to the demand of 400G in 24 years, and the demand increase in recent years is about 100%. From the perspective of high-end module solutions, the silicon light scheme and 200G PAM4 CWDM EML to be commercialized replace the market of part 100GPAM4 EML, the current estimated shipping proportion of the silicon light module is not more than 30%, and the future 1-2 years are not more than 50%.200G PAM4 EML is shipped relatively less because of maturity issues and the like. Therefore, there is still much market space in the future for the 200g PAM4 EML requirements. The reliability of the 200g PAM4 EML in application already existing in the prior art needs to be improved. Disclosure of utility model In view of the above, the present utility model aims to provide a 200Gbps CWDM EML laser, which is designed for epitaxial PL, grating period, chip process, etc. to manufacture an integrated chip, and the structural design gives play to the temperature advantage of AlGaInAs active materials, and further protects the active region by PQ waveguide butt joint, thereby further improving the reliability of the product. The utility model adopts the following technical scheme that the 200Gbps CWDM EML laser consists of 4 sections of butt joint areas, specifically, a first butt joint area is formed by butt joint of a PQ waveguide and one end of a DFB laser diode, a second butt joint area is formed by butt joint of the other end of the DFB laser diode and a PQ waveguide of an isolation area, a third butt joint area is formed by butt joint of the PQ waveguide of the isolation area and one end of an EA modulator, a fourth butt joint area is formed by butt joint of the other end of the EA modulator and the PQ waveguide, the DFB laser diode and the EA modulator are designed on the same ridge waveguide, and the 4 sections of butt joint areas are integrated on one EML laser. In a preferred embodiment, a section of PQ waveguide is arranged at one end of the DFB laser diode and one end of the EA modulator in butt joint, a common isolation region PQ waveguide is arranged between the DFB laser diode and the EA modulator, and the DFB length is 300-400um and the EA length is 50-150um. In a preferred embodiment, the length of a PQ waveguide provided at one end of each of the DFB laser diode and the EA modulator is 15-30um. In a preferred embodiment, the length of the common isolation region PQ waveguide between the DFB laser diode and the EA modulator is 30-80um. In a preferred embodiment, the ridge waveguide width is 2.0-3.0um. Compared with IDENTICAL, SAG schemes, the utility model not only exerts the temperature advantage of AlGaInAs active materials, but also protects the active region through PQ waveguide butt joint, thereby further improving the reliability of products. Drawings FIG. 1 is a diagram of the epitaxial layer structure of a 200Gbps CWDM EML laser according to an embodiment of the present utility model; FIG. 2 is a schematic diagram of a chip of a 200Gbps CWDM EML laser according to an embodiment of the utility model; FIG. 3 is a 3D schematic diagram of a chip of a 200Gbps CWDM EML laser according to an embodiment of the utility model; FIG. 4 is LIV test data for a 200Gbps CWDM EML laser according to an embodiment of the present utility model; FIG. 5 is bandwidth test data for a 200Gbps CWDM EML laser according to an embodiment of the utility model; fig. 6 is eye diagram test data for a 200Gbps CWDM EML laser according to an embodiment of the present utility model. Detailed Description The utility model will be further described with reference to the accompanying drawings and examples. It should be noted that the following detailed description is illustrative and is intended to provide further explanation of the application. Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. It should be noted that the terms used herein