CN-224233569-U - Low-loss inverter circuit based on high-frequency IGBT

CN224233569UCN 224233569 UCN224233569 UCN 224233569UCN-224233569-U

Abstract

The utility model discloses a low-loss inverter circuit based on a high-frequency IGBT, which is characterized in that a control unit, an inverter circuit and a driving circuit are arranged, the control unit controls the driving circuit to send a high-frequency signal to the high-frequency inverter module for PWM rectification and output a direct-current voltage to a first filter module, the direct-current voltage is subjected to filter processing by the first filter module and a second filter module and output a low-frequency sine wave corresponding to the direct-current voltage by an output module, the high-frequency IGBT is used as the inverter circuit to reduce the switching loss, the driving circuit adopts sine pulse width modulation, the driving circuit and the high-frequency inverter circuit are combined to effectively modulate the high-frequency signal, the crossover distortion is reduced, the RC filter is used for filtering and rectifying the high-frequency IGBT inverter circuit, the output waveform is optimized, and the circuit has the characteristics of high integration level, low temperature rise and less harmonic wave, and the working stability of the circuit is improved.

Inventors

LONG SHENG
ZENG LINGDONG
PANG XIAOPENG

Assignees

深圳市达峰时代科技有限公司

Dates

Publication Date: 20260512
Application Date: 20250416

Claims (9)

1. The low-loss inverter circuit based on the high-frequency IGBT is characterized by comprising a control unit, an inverter circuit and a driving circuit, wherein the control unit and the driving circuit are connected with the inverter circuit, and the driving circuit is connected with the control unit; The inverter circuit comprises a high-frequency inverter module, a first filtering module, a second filtering module and an output module, wherein one end of the high-frequency inverter module is used for being connected with a direct current bus, the other end of the high-frequency inverter module and the second filtering module are both connected with the first filtering module, and the second filtering module is connected with the output module; The driving circuit comprises a first isolation driving module and a second isolation driving module, and the first isolation driving module and the second isolation driving module are connected with the high-frequency inversion module; The control unit controls the driving circuit to send a high-frequency signal to the high-frequency inversion module for PWM rectification and outputs direct-current voltage to the first filtering module, and the direct-current voltage is subjected to filtering processing by the first filtering module and the second filtering module and outputs a low-frequency sine wave corresponding to the direct-current voltage by the output module.
2. The low-loss inverter circuit based on the high-frequency IGBT according to claim 1, wherein the high-frequency inverter module comprises a first bridge arm circuit and a second bridge arm circuit, the first bridge arm circuit comprises a power switch tube Q1, a resistor R5, a power switch tube Q3 and a resistor R15, the drain electrode of the power switch tube Q1 is connected with the input end of a direct current bus, the grid electrode of the power switch tube Q1 is connected with one end of the resistor R5, the other end of the resistor R5 is connected with the source electrode of the power switch tube Q1 and the drain electrode of the power switch tube Q3, the grid electrode of the power switch tube Q3 is connected with one end of the resistor R15, the source electrode of the power switch tube Q3 is connected with the other end of the resistor R15 and grounded, and the second isolation driving module is connected with the midpoint VHS1 of the first bridge arm circuit; The second bridge arm circuit comprises a power switch tube Q2, a resistor R6, a power switch tube Q4 and a resistor R16, wherein the drain electrode of the power switch tube Q2 is connected with the input end of a direct current bus, the grid electrode of the power switch tube Q2 is connected with one end of the resistor R6, the other end of the resistor R6 is connected with the source electrode of the power switch tube Q2 and the drain electrode of the power switch tube Q4, the grid electrode of the power switch tube Q4 is connected with one end of the resistor R16, the other end of the resistor R16 is connected with the source electrode of the power switch tube Q4 and grounded, and the first isolation driving module is connected with the midpoint VHS2 of the second bridge arm circuit.
3. The low-loss inverter circuit based on high-frequency IGBT according to claim 2, wherein the first filter module includes an inductor L1 and a capacitor C2, one end of the inductor L1 is connected to the second bridge arm circuit, the other end of the inductor L1 is connected to the capacitor C2, and the capacitor C2 is connected to the first bridge arm circuit.
4. The low-loss inverter circuit based on high-frequency IGBT of claim 3 wherein the capacitor C2 is a thin film capacitor, and the inductor L1 is made of a ring-shaped sendust core.
5. The low-loss inverter circuit based on high-frequency IGBT according to claim 3, wherein the second filter module includes an inductor L2, an inductor L3, and a capacitor CX1, the inductor L2 and the inductor L3 are common-mode inductors, the capacitor CX1 is located between the inductor L2 and the inductor L3, one end of the inductor L2 is connected with the inductor L1, the capacitor C2, the first bridge arm circuit, the other end of the inductor L2 is connected with one end of the capacitor CX1 and one end of the inductor L3, and the inductor L3 is connected with the output module.
6. The high frequency IGBT based low loss inverter circuit of claim 5 wherein the first isolation driver module comprises a die U2, a first peripheral circuit connected to die U2, the second isolation driver module comprises a die U3, a second peripheral circuit connected to die U3, the first and second peripheral circuits each comprising a plurality of resistors, a plurality of capacitors, and a plurality of diodes.
7. The low-loss inverter circuit based on high-frequency IGBT of claim 6, wherein the high-frequency inverter module outputs a positive DC voltage when the power switching tube Q1 and the power switching tube Q4 are turned on, and outputs a negative DC voltage when the power switching tube Q2 and the power switching tube Q3 are turned on.
8. The high-frequency IGBT-based low-loss inverter circuit according to claim 1, wherein the control unit controls the second isolation driving module to emit a 100KHz high-frequency wave, and the control unit controls the first isolation driving module to emit a 50KHz high-frequency wave, and the frequency of the low-frequency sine wave is 50Hz.
9. The high frequency IGBT based low loss inverter circuit of claim 6 wherein the die U2 and the die U3 are CA-IS3221BW.

Description

Low-loss inverter circuit based on high-frequency IGBT Technical Field The utility model belongs to the technical field of power electronics, and particularly relates to a low-loss inverter circuit based on a high-frequency IGBT. Background At present, the high-frequency inverter generally inverts low-voltage direct current into high-frequency low-voltage alternating current through a high-frequency conversion technology, then boosts the voltage by a high-frequency transformer, rectifies the boosted voltage into high-voltage direct current with the voltage of more than 300V by a high-frequency rectification and filtering circuit, and finally obtains 220V power-frequency alternating current for load use by a power-frequency inverter circuit. However, since the conventional power frequency inverter circuit with the frequency of 20KHz has large volume and weight, the switching loss in the power frequency inverter circuit is increased, so that harmonic pollution occurs to the output current, and an additional filter is required, so that the manufacturing cost of the high frequency inverter circuit is increased. Accordingly, there is a need to provide a low-loss inverter circuit based on high-frequency IGBTs to solve the above-mentioned technical problems. Disclosure of utility model In order to solve the problems, the utility model provides a low-loss inverter circuit based on a high-frequency IGBT, which can reduce switching loss by adopting the high-frequency IGBT, has the characteristics of high integration level and low temperature rise, and reduces harmonic pollution so as to solve the problems in the prior art. In order to achieve the above purpose, the present utility model adopts the following technical scheme: The utility model provides a low-loss inverter circuit based on a high-frequency IGBT, which comprises a control unit, an inverter circuit and a driving circuit, wherein the control unit and the driving circuit are connected with the inverter circuit, and the driving circuit is connected with the control unit; The inverter circuit comprises a high-frequency inverter module, a first filtering module, a second filtering module and an output module, wherein one end of the high-frequency inverter module is used for being connected with a direct current bus, the other end of the high-frequency inverter module and the second filtering module are both connected with the first filtering module, and the second filtering module is connected with the output module; The driving circuit comprises a first isolation driving module and a second isolation driving module, and the first isolation driving module and the second isolation driving module are connected with the high-frequency inversion module; The control unit controls the driving circuit to send a high-frequency signal to the high-frequency inversion module for PWM rectification and outputs direct-current voltage to the first filtering module, and the direct-current voltage is subjected to filtering processing by the first filtering module and the second filtering module and outputs a low-frequency sine wave corresponding to the direct-current voltage by the output module. As an optimization of the above technical scheme, the high-frequency inverter module includes a first bridge arm circuit and a second bridge arm circuit, the first bridge arm circuit includes a power switch tube Q1, a resistor R5, a power switch tube Q3 and a resistor R15, a drain electrode of the power switch tube Q1 is connected with an input end of a dc bus, a gate electrode of the power switch tube Q1 is connected with one end of the resistor R5, another end of the resistor R5 is connected with a source electrode of the power switch tube Q1 and a drain electrode of the power switch tube Q3, a gate electrode of the power switch tube Q3 is connected with one end of the resistor R15, a source electrode of the power switch tube Q3 is connected with another end of the resistor R15 and is grounded, and the second isolation driving module is connected with a midpoint VHS1 of the first bridge arm circuit; The second bridge arm circuit comprises a power switch tube Q2, a resistor R6, a power switch tube Q4 and a resistor R16, wherein the drain electrode of the power switch tube Q2 is connected with the input end of a direct current bus, the grid electrode of the power switch tube Q2 is connected with one end of the resistor R6, the other end of the resistor R6 is connected with the source electrode of the power switch tube Q2 and the drain electrode of the power switch tube Q4, the grid electrode of the power switch tube Q4 is connected with one end of the resistor R16, the other end of the resistor R16 is connected with the source electrode of the power switch tube Q4 and grounded, and the first isolation driving module is connected with the midpoint VHS2 of the second bridge arm circuit. As an optimization of the above technical scheme, the first filtering module includes an inductor L1