CN-224233670-U - S, C wave band broadband high-power synthesis device

CN224233670UCN 224233670 UCN224233670 UCN 224233670UCN-224233670-U

Abstract

The utility model discloses a S, C-band broadband high-power synthesis device which comprises a front-stage power distribution module, at least two amplifying modules and a rear-stage power synthesis module, wherein the front-stage output end is connected with the input end of each amplifying module, the output ends of each amplifying module are connected with the rear-stage input end in a tandem way, the amplifying modules comprise an input T-shaped junction microstrip power divider, a 90-degree hybrid bridge, a gallium nitride power amplifying chip, a matched load and an output T-shaped junction microstrip power divider, the 90-degree hybrid bridge isolation ports are all connected with the matched load, each level of power divider is integrated with a quarter-wavelength impedance transformation node, and the radio frequency and power supply circuits in the amplifying modules are arranged in a stacked way.

Inventors

HE YANG
TANG XINGLIN

Assignees

成都市凌巨通科技有限公司

Dates

Publication Date: 20260512
Application Date: 20260408

Claims (7)

1. The S, C-band broadband high-power synthesis device is characterized by comprising a front-stage power distribution module, at least two amplifying modules and a rear-stage power synthesis module, wherein each amplifying module comprises an input power distribution network, a plurality of power amplifying chips and an output power synthesis network, the input end of the input power distribution network of each amplifying module is respectively connected with one output end of the front-stage power distribution module, and the output end of the output power synthesis network of each amplifying module is respectively connected with one input end of the rear-stage power synthesis module; The front-stage power distribution module comprises a front-stage T-shaped junction microstrip power divider (D1), the rear-stage power synthesis module comprises a rear-stage T-shaped junction microstrip power divider (D4), the input power distribution network comprises an input T-shaped junction microstrip power divider (D2), the output power synthesis network comprises an output T-shaped junction microstrip power divider (D3), and impedance transformation sections of the front-stage T-shaped junction microstrip power divider (D1), the input T-shaped junction microstrip power divider (D2), the output T-shaped junction microstrip power divider (D3) and the rear-stage T-shaped junction microstrip power divider (D4) all comprise quarter-wavelength impedance transformation sections.
2. The S, C-band broadband high-power synthesis device according to claim 1, wherein the input T-junction microstrip power divider (D2) has at least two output ends, the input power distribution network of each amplifying module further includes at least two input 90 ° hybrid bridges, each output end of the input T-junction microstrip power divider (D2) is connected to an input end of one input 90 ° hybrid bridge, two output ends of each input 90 ° hybrid bridge are connected to input ends of two power amplifying chips, each output T-junction microstrip power divider (D3) has at least two input ends, each output power synthesis network of each amplifying module further includes at least two output 90 ° hybrid bridges, two input ends of each output 90 ° hybrid bridge are connected to output ends of two power amplifying chips, and each output end of each output 90 ° hybrid bridge is connected to an input end of the output T-junction microstrip power divider (D3).
3. The S, C-band broadband high-power combining apparatus according to claim 2, wherein the isolation ports of each of the input 90 ° hybrid bridge and each of the output 90 ° hybrid bridge are connected with matching loads.
4. The S, C-band broadband high-power combining apparatus according to claim 1, wherein the front-stage power distribution module and each of the amplifying modules, and each of the amplifying modules and the rear-stage power combining module are connected by coaxial connectors.
5. The S, C-band broadband high-power synthesis device according to claim 1, wherein the front-stage T-junction microstrip power divider and the rear-stage T-junction microstrip power divider have the same structure, and the input T-junction microstrip power divider (D2) and the output T-junction microstrip power divider (D3) have the same structure.
6. The S, C-band broadband high-power combining apparatus according to claim 1, wherein the plurality of power amplifying chips are gallium nitride high-electron mobility transistor chips.
7. The S, C-band broadband high-power combining apparatus according to claim 2, wherein in each of the amplifying modules, the number of the input 90 ° hybrid bridge and the output 90 ° hybrid bridge is 2, and the number of the power amplifying chips is 4.

Description

S, C wave band broadband high-power synthesis device Technical Field The utility model relates to the technical field of radio frequency microwaves, in particular to a broadband high-power synthesis device for S, C wave bands. Background S-band (2-4 GHz) and C-band (4-8 GHz) are core working frequency bands of radar, satellite communication, electronic countermeasure and other systems. These applications place stringent demands on the output power (often over hundreds of watts), bandwidth (often covering single or multiple octaves), and efficiency of the rf power source. At present, although solid-state power amplification chips based on gallium nitride (GaN) and other technologies have advantages in bandwidth and efficiency, the single-chip output power of the solid-state power amplification chips still has difficulty in directly meeting the peak power requirements of a system level. Therefore, the superposition of the output energy of the plurality of amplifier units by the power combining technique has become an inevitable technical path for realizing high-power output. However, the implementation of high-efficiency and stable high-power synthesis in such a wide frequency range of S, C bands generally faces several key challenges, namely, firstly, in the prior art, the impedance structure of the power divider generally adopts a unified design (such as a full system uses the same form of impedance transformation section), and it is difficult to consider the dual requirements of system-level broadband matching and module-level compact integration, namely, the ultra-broadband matching of the input/output end of the system is required, and the high-density layout is required inside the module. The contradiction leads to standing wave deterioration and synthesis efficiency reduction in the frequency range of 2-8GHz, secondly, when a large number of amplifier chips are stacked for synthesizing high power, heat dissipation problem is caused, heat concentration can damage the reliability of the chips, meanwhile, electromagnetic coupling interference among multiple paths of high-power radio frequency circuits is more obvious, in addition, the traditional single-cavity integrated architecture has inherent limitation in maintainability and power expansibility, local faults need to be replaced integrally, and the power expansion is not flexible enough. In view of the foregoing, an innovative power combining device is needed for S, C band application features. The device not only needs to have excellent broadband matching characteristics and a low-loss synthesis network to ensure the synthesis efficiency, but also needs to solve the problems of concentrated heat dissipation and electromagnetic interference under high power to ensure long-term stable work, and meanwhile, the modularized design idea brings significant value for system maintenance and power expansion. This is the core problem to be solved by the present utility model. Disclosure of utility model The utility model aims to overcome the defects of the prior art and provide a S, C-band broadband high-power synthesis device which comprises a front-stage power distribution module, at least two amplifying modules and a rear-stage power synthesis module, wherein each amplifying module comprises an input power distribution network, a plurality of power amplifying chips and an output power synthesis network, the input end of the input power distribution network of each amplifying module is respectively connected with one output end of the front-stage power distribution module, and the output end of the output power synthesis network of each amplifying module is respectively connected with one input end of the rear-stage power synthesis module; The front-stage power distribution module comprises a front-stage T-shaped junction microstrip power divider, the rear-stage power synthesis module comprises a rear-stage T-shaped junction microstrip power divider, the input power distribution network comprises an input T-shaped junction microstrip power divider, the output power synthesis network comprises an output T-shaped junction microstrip power divider, and the impedance transformation sections of the front-stage T-shaped junction microstrip power divider, the input T-shaped junction microstrip power divider, the output T-shaped junction microstrip power divider and the rear-stage T-shaped junction microstrip power divider all comprise quarter-wavelength impedance transformation sections. Preferably, the input T-junction microstrip power divider has at least two output ends, the input power distribution network of each amplifying module further includes at least two input 90 ° hybrid bridges, each output end of the input T-junction microstrip power divider is connected to an input end of one input 90 ° hybrid bridge, two output ends of each input 90 ° hybrid bridge are connected to input ends of two power amplifying chips, the output T-junction microstrip power divid