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CN-224234070-U - Capacitor and electronic equipment

CN224234070UCN 224234070 UCN224234070 UCN 224234070UCN-224234070-U

Abstract

The application relates to a capacitor and an electronic device, wherein the capacitor comprises a silicon substrate and a plurality of mutually independent silicon capacitors. And a plurality of mutually independent silicon capacitors are arranged on one side surface of the same silicon substrate in an array manner, each silicon capacitor is provided with a corresponding signal transmission module, and the capacitance values of the silicon capacitors are the same or different. The present application utilizes a semiconductor process to integrate a plurality of silicon capacitors on a silicon substrate. Based on the semiconductor technology, each silicon capacitor integrated on the same silicon substrate is provided with an independent capacitance value and a signal transmission module, and can work independently or be used cooperatively with other units according to the needs, so that the requirements of different circuits are met, and the flexibility and the integration level of the circuits are greatly improved.

Inventors

  • TONG ZHIHAO

Assignees

  • 苏州敏芯微电子技术股份有限公司

Dates

Publication Date
20260512
Application Date
20250514

Claims (10)

  1. 1. A capacitor, comprising: a silicon substrate (1); And a plurality of mutually independent silicon capacitors (2) are arranged on one side surface of the same silicon substrate (1) in an array manner, each silicon capacitor (2) is provided with a corresponding signal transmission module (21), and the capacitance values of the silicon capacitors (2) are the same or different.
  2. 2. The capacitor according to claim 1, characterized in that the silicon capacitor (2) comprises: a multiplexing bottom electrode (22) located on one side surface of the silicon substrate (1); A plurality of mutually independent capacitance modules (23) which are arranged in an array on the surface of one side of the same multiplexing bottom electrode (22) which faces away from the silicon substrate (1); The signal transmission module (21) is positioned on one side surface of the multiplexing bottom electrode (22) and is used for outputting the electric signal of the multiplexing bottom electrode (22); The connecting module (24) is positioned between two adjacent capacitance modules (23) and is electrically connected with the two adjacent capacitance modules (23); Each capacitor module (23) comprises a top electrode (231) which is independent of each other, the top electrode (231) of any capacitor module (23) is used for outputting a top electrode (231) signal of the silicon capacitor (2), and multiplexing bottom electrodes (22) of the silicon capacitors (2) are independent of each other.
  3. 3. The capacitor according to claim 2, characterized in that the capacitance module (23) comprises: And a first dielectric layer (232) located between the multiplexing bottom electrode (22) and the top electrode (231), wherein the first dielectric layers (232) of the capacitor modules (23) are independent, and the capacitance value of the capacitor modules (23) is related to the thickness of the first dielectric layers (232).
  4. 4. The capacitor according to claim 2, characterized in that the signal transmission module (21) comprises: A second dielectric layer (211) which is positioned on one side surface of the multiplexing bottom electrode (22) which is away from the silicon substrate (1), wherein the second dielectric layer (211) is provided with a conductive hole penetrating through the second dielectric layer (211); and the signal transmission layer (212), wherein the signal transmission layer (212) covers one side surface of the second dielectric layer (211) which is away from the multiplexing bottom electrode (22) and is filled in the conductive hole.
  5. 5. The capacitor according to claim 2, characterized in that the connection module (24) comprises: a support layer (241) located on a side surface of the multiplexing bottom electrode (22) facing away from the silicon substrate (1); The electric connection layer (242) is positioned on one side surface of the supporting layer (241) away from the multiplexing bottom electrode (22) and is connected with the top electrodes (231) of the adjacent two capacitance modules (23); Wherein the projection area of the connection module (24) on the silicon substrate (1) is smaller than the projection area of the capacitance module (23) on the silicon substrate (1).
  6. 6. The capacitor according to claim 5, characterized in that the electrical connection layer (242) is integrally formed with the top electrode (231) of the capacitive module (23).
  7. 7. The capacitor according to claim 1, characterized in that the silicon capacitor (2) comprises: electrode structures (25) arranged at intervals along a direction perpendicular to the surface of the silicon substrate (1); A dielectric structure (26) located between two adjacent electrode structures (25); A signal transmission module (21) comprising a first transmission unit (213) and a second transmission unit (214); Wherein, in the direction vertical to the surface of the silicon substrate (1), two adjacent electrode structures (25) and a dielectric structure (26) positioned in the interval of the electrode structures jointly form a capacitor unit, one of the two adjacent electrode structures (25) is a bottom electrode, the other electrode is a top electrode, the first transmission unit (213) is electrically connected with the bottom electrode, and the second transmission unit (214) is electrically connected with the top electrode.
  8. 8. The capacitor according to claim 7, characterized in that the first transmission unit (213) and the second transmission unit (214) each comprise: The electric connection structures (2132) are arranged at intervals along the direction vertical to the surface of the silicon substrate (1) and are connected with the electrode structures (25) to be connected in a one-to-one correspondence manner, and the electric connection structures (2132) positioned in the same transmission unit are electrically connected; -a support structure (2131) located between two adjacent electrical connection structures (2132) and/or between the electrical connection structures (2132) and the silicon substrate (1); A signal transmission structure (2133) located on an electrical connection structure (2132) remote from the silicon substrate (1); The transmission unit is capable of outputting an electrical signal of an electrode structure (25) connected to the transmission unit.
  9. 9. A capacitor according to any of claims 1-8, characterized in that a side of the silicon substrate (1) facing away from the silicon capacitor (2) is provided with a plurality of heat dissipation holes (11).
  10. 10. An electronic device comprising a capacitor as claimed in any one of claims 1-9.

Description

Capacitor and electronic equipment Technical Field The present application relates to the field of semiconductor technologies, and in particular, to a capacitor and an electronic device. Background Capacitors are used as essential elements in electronic circuits and are widely used in various fields such as filtering, energy storage, coupling, decoupling and signal processing. Capacitors play a critical role, especially in high-speed signal processing, power management, and Radio Frequency (RF) circuits. As electronic devices continue to develop in a high performance, miniaturized direction, the demands on capacitors have increased. For example, in a Power Amplifier (PA) module, it is often necessary to configure a plurality of capacitors, whose capacities are often varied from a few picofarads (pF) to a few tens of picofarads (pF), which are required to have high reliability and stability, and must be as close to the element ports as possible to reduce parasitic inductance or parasitic capacitance on the signal path, thereby improving the performance of the entire circuit system. The multi-layer ceramic capacitor (MLCC) that is widely used at present often occupies more space of a circuit board when in an application scenario where a plurality of capacitors are required to be equipped at the same time, so that a limited board space is difficult to realize high-density arrangement. Disclosure of utility model The embodiment of the application provides a capacitor and electronic equipment, and aims to solve the problems that the capacitor occupies a large space and is difficult to realize high-density arrangement. In order to achieve the above object, according to a first aspect of the present application, there is provided a capacitor comprising: A silicon substrate; And the silicon capacitors are mutually independent and are arranged on one side surface of the same silicon substrate in an array manner, each silicon capacitor is provided with a corresponding signal transmission module, and the capacitance values of the silicon capacitors are the same or different. Optionally, the silicon capacitor includes: a multiplexing bottom electrode positioned on one side surface of the silicon substrate; The plurality of mutually independent capacitor modules are arranged on the surface of one side of the same multiplexing bottom electrode, which is away from the silicon substrate, in an array manner; The signal transmission module is positioned on one side surface of the multiplexing bottom electrode and is used for outputting the electric signal of the multiplexing bottom electrode; The connecting module is positioned between the two adjacent capacitance modules and is electrically connected with the two adjacent capacitance modules; Each capacitor module comprises mutually independent top electrodes, the top electrode of any capacitor module is used for outputting a top electrode signal of the silicon capacitor, and multiplexing bottom electrodes of the silicon capacitors are mutually independent. Optionally, the capacitive module includes: The first dielectric layers are positioned between the multiplexing bottom electrode and the top electrode, the first dielectric layers of the capacitor modules are mutually independent, and the capacitance value of each capacitor module is related to the thickness of the first dielectric layer. Optionally, the signal transmission module includes: The second dielectric layer is positioned on one side surface of the multiplexing bottom electrode, which is away from the silicon substrate, and is provided with a conductive hole penetrating through the second dielectric layer; And the signal transmission layer covers the surface of one side of the second dielectric layer, which is away from the multiplexing bottom electrode, and is filled in the conductive hole. Optionally, the connection module includes: The support layer is positioned on the surface of one side of the multiplexing bottom electrode, which is away from the silicon substrate; The electric connection layer is positioned on one side surface of the supporting layer, which is away from the multiplexing bottom electrode, and is connected with the top electrodes of the two adjacent capacitance modules; The projection area of the connection module on the silicon substrate is smaller than the projection area of the capacitor module on the silicon substrate. Optionally, the electrical connection layer and the top electrode of the capacitor module are integrally formed. Optionally, the silicon capacitor includes: electrode structures arranged at intervals along a direction perpendicular to the surface of the silicon substrate; A dielectric structure located between two adjacent electrode structures; The signal transmission module comprises a first transmission unit and a second transmission unit; And in the direction vertical to the surface of the silicon substrate, two adjacent electrode structures and a dielectric structure