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CN-224234071-U - Three-dimensional stacked power module and power supply device

CN224234071UCN 224234071 UCN224234071 UCN 224234071UCN-224234071-U

Abstract

The application is applicable to the technical field of power devices, and provides a three-dimensional stacked power module and a power module, wherein the three-dimensional stacked power module comprises a first substrate, a second substrate and a third substrate, wherein the first substrate is provided with a first power terminal and a first signal terminal; the second substrate is provided with a first power chip, a second power terminal and a second signal terminal, the second substrate is provided with a second substrate upper metal layer and a second substrate lower metal layer, the second substrate upper metal layer is electrically connected with the second substrate lower metal layer, one end of the first connecting component is electrically connected with the first substrate, the other end of the first connecting component is electrically connected with the first power chip, the third substrate is provided with a second power chip and a third power terminal, one end of the second connecting component is electrically connected with the second substrate lower metal layer, and the other end of the second connecting component is electrically connected with the second power chip. The application can reduce parasitic inductance in the circuit and power loss.

Inventors

  • LIU QIAO
  • WANG ZHIXIANG

Assignees

  • 深圳陕煤高新技术研究院有限公司

Dates

Publication Date
20260512
Application Date
20250427

Claims (10)

  1. 1. A three-dimensional stacked power module, comprising: A first substrate provided with a first power terminal and a first signal terminal; The second substrate is provided with a first power chip, a second power terminal and a second signal terminal, and is provided with a second substrate upper metal layer and a second substrate lower metal layer which are electrically connected; One end of the first connecting component is electrically connected with the first substrate, and the other end of the first connecting component is electrically connected with the first power chip; the third substrate is provided with a second power chip and a third power terminal; one end of the second connecting component is electrically connected to the metal layer under the second substrate, and the other end of the second connecting component is electrically connected to the second power chip.
  2. 2. The three-dimensional stacked power module of claim 1, wherein the first substrate has a first under-substrate metal layer comprising a first gate region and a first source region, the first gate region and the first source region being spaced apart, the first signal terminal being connected to the first gate region, the first power terminal being connected to the first source region.
  3. 3. The three-dimensional stacked power module of claim 2, wherein the first power chip has a first gate and a first source, the first connection assembly comprises a first pad and a first thimble, one end of the first pad is electrically connected to the first source region, the other end of the first pad is electrically connected to the first source, one end of the first thimble is electrically connected to the first gate region, and the other end of the first thimble is electrically connected to the first gate.
  4. 4. The three-dimensional stacked power module of claim 3, wherein the second under-substrate metal layer comprises a second gate region and a second source region, the second gate region and the second source region being spaced apart, the second signal terminal being connected to the second gate region, the second power terminal being connected to the second source region.
  5. 5. The three-dimensional stacked power module of claim 4, wherein the second power chip has a second gate and a second source, the second connection assembly comprises a second pad and a second thimble, one end of the second pad is electrically connected to the second source region, the other end of the second pad is electrically connected to the second source, one end of the second thimble is electrically connected to the second gate region, and the other end of the second thimble is electrically connected to the second gate.
  6. 6. The three-dimensional stacked power module of claim 4, further comprising a fourth power terminal disposed on the second sub-substrate metal layer.
  7. 7. The three-dimensional stacked power module of claim 6, wherein the first power chip and the second power terminal are disposed on the second substrate upper metal layer, the second signal terminal is disposed on the second substrate lower metal layer, and the second signal terminal is disposed at a spacing from the fourth power terminal.
  8. 8. The three-dimensional stacked power module of claim 7, wherein the first substrate lower metal layer is provided with a first avoidance region, the first avoidance region is adapted to the second power terminal, the second substrate upper metal layer is provided with a second avoidance region, the second avoidance region is adapted to the first power terminal and the first signal terminal, the second substrate lower metal layer is provided with a third avoidance region adapted to the third power terminal, the third substrate is provided with a fourth avoidance region adapted to the second signal terminal and the fourth power terminal.
  9. 9. The three-dimensional stacked power module of claim 4, comprising a plurality of the first power chips and a plurality of the second power chips, the plurality of the first power chips being oriented identically and the plurality of the second power chips being oriented identically.
  10. 10. A power supply device comprising a power supply, and further comprising the three-dimensional stacked power module of any one of claims 1-9, wherein a positive electrode of the power supply is electrically connected to the third power terminal, and a negative electrode of the power supply is electrically connected to the first power terminal.

Description

Three-dimensional stacked power module and power supply device Technical Field The application belongs to the technical field of power devices, and particularly relates to a three-dimensional stacked power module and a power supply device. Background With the continuous improvement of energy crisis and environmental protection consciousness, the electric energy conversion fields such as new energy power generation and new energy automobiles are paid great attention to. The power module is an important component responsible for realizing electric energy conversion, and in order to convert electric energy more and more rapidly to meet the increasing use demands, the power equal pole of the power module needs to be increased to output larger power. In the related art, a longer lead is generally used to connect corresponding areas of a plurality of power modules to increase the overall output power, and the lead has self-inductance property, electromagnetic induction is generated when current passes through the lead, and extra high parasitic inductance exists in a circuit of the power modules, so that the signal transmission speed is reduced, the frequency response of the circuit is affected, and meanwhile, extra power loss is generated, so that the power output efficiency of the power modules is reduced. Disclosure of utility model An embodiment of the application aims to provide a three-dimensional stacked power module and a power supply device, which are used for solving the technical problems that lead connection in the prior art affects the frequency response of a circuit and reduces the power output efficiency of the power module. In order to achieve the above purpose, the technical scheme adopted by the application is that a three-dimensional stacked power module is provided, which comprises: a first substrate provided with a first power terminal and a first signal terminal; The second substrate is provided with a first power chip, a second power terminal and a second signal terminal, and is provided with a second substrate upper metal layer and a second substrate lower metal layer which are electrically connected; one end of the first connecting component is electrically connected with the first substrate, and the other end of the first connecting component is electrically connected with the first power chip; the third substrate is provided with a second power chip and a third power terminal; And one end of the second connecting component is electrically connected with the lower metal layer of the second substrate, and the other end of the second connecting component is electrically connected with the second power chip. According to the three-dimensional stacked power module, power input can be achieved through the power terminals, control signals can be transmitted through the signal terminals, the first power chip and the second power chip are respectively arranged on different substrates, the upper metal layer of the second substrate is electrically connected with the lower metal layer of the second substrate, the whole three-dimensional stacked power module can form a complete half-bridge module circuit, electric energy conversion of the three-dimensional stacked power module is facilitated, the first power chip and the first substrate are directly connected through the first connecting component, the second power chip and the second substrate are directly connected through the second connecting component, current can be rapidly transmitted between the first power chip and the first substrate through the first connecting component, and the current can be rapidly transmitted between the second power chip and the second substrate through the second connecting component, the fact that the long lead wires are used for connecting corresponding areas of the stacked power module can be reduced, parasitic inductance in a circuit can be reduced, the influence of the three-dimensional stacked power module on signal transmission speed and frequency response can be reduced, power loss can be reduced, and power output efficiency of the three-dimensional stacked power module can be improved. In some embodiments, the first substrate has a first under-substrate metal layer including a first gate region and a first source region, the first gate region and the first source region being disposed at intervals, the first signal terminal being connected to the first gate region, the first power terminal being connected to the first source region. By adopting the technical scheme, the first grid electrode area and the first source electrode area are divided in the metal layer below the first substrate and are arranged at intervals, so that signal transmission and power transmission can be effectively isolated, cross interference between the first grid electrode area and the first source electrode area is avoided, the first signal terminal is responsible for transmitting control signals to the first grid electrode area, th