CN-224234077-U - Solar cell and photovoltaic module

Abstract

The utility model discloses a solar cell and a photovoltaic module, wherein the solar cell comprises a silicon substrate, a first tunneling passivation structure, a first electrode, a second tunneling passivation structure and a second electrode, wherein the first surface and the second surface are oppositely arranged, the first tunneling passivation structure is positioned on the first surface, the first tunneling passivation structure comprises a first tunneling layer and a first doping layer which are sequentially stacked, the doping type of the first doping layer is the same as that of the silicon substrate, the first electrode is positioned on the first surface and is electrically contacted with the first doping layer, the second tunneling passivation structure is positioned on the second surface, the second tunneling passivation structure comprises a second tunneling layer and a second doping layer which are sequentially stacked, the doping type of the second doping layer is opposite to that of the silicon substrate, and the second electrode is positioned on the second surface and is electrically contacted with the second doping layer. The solar cell and the photovoltaic module can improve the reverse saturation current density of a metal area and improve the cell efficiency.

Inventors

• GAO QIUYUE

Assignees

• 扬州阿特斯太阳能电池有限公司

Dates

Publication Date

20260512

Application Date

20250425

Claims (15)

1. 1. A solar cell, comprising: A silicon substrate having a first surface and a second surface disposed opposite to each other; the first tunneling passivation structure is positioned on the first surface and comprises a first tunneling layer and a first doping layer which are sequentially stacked, and the doping type of the first doping layer is the same as that of the silicon substrate; A first electrode on the first surface and in electrical contact with the first doped layer; the second tunneling passivation structure is positioned on the second surface and comprises a second tunneling layer and a second doping layer which are sequentially stacked, and the doping type of the second doping layer is opposite to that of the silicon substrate; And a second electrode on the second surface and in electrical contact with the second doped layer.
2. 2. The solar cell according to claim 1, wherein the first surface is a polished surface or a light trapping structure textured surface, and/or, The second surface is a polished surface.
3. 3. The solar cell according to claim 1, wherein the first surface is a polished surface, and/or, The second surface is a polished surface or a light trapping structure suede.
4. 4. The solar cell of claim 1, wherein the first surface comprises first and second regions spaced apart, the first tunneling passivation structure being located in the first region.
5. 5. The solar cell according to claim 4, wherein the first area of the first surface is a polished surface or a light trapping structure textured surface, and/or, The second area of the first surface is a light trapping structure suede.
6. 6. The solar cell of claim 4, wherein the first and second regions of the first surface are polished surfaces.
7. 7. The solar cell of claim 4, wherein the first surface is recessed in the second region relative to the first region.
8. 8. The solar cell of claim 1, wherein the second surface comprises third and fourth regions spaced apart, the second tunneling passivation structure being located in the third region.
9. 9. The solar cell of claim 8, wherein the third and fourth regions of the second surface are polished surfaces.
10. 10. The solar cell according to claim 8, wherein the third area of the second surface is a polished surface or a light trapping structure textured surface, and/or, And the fourth area of the second surface is a light trapping structure suede.
11. 11. The solar cell of claim 8, wherein the second surface is recessed in the fourth region relative to the third region.
12. 12. The solar cell according to claim 1, wherein the first tunneling layer is any one or a combination of a silicon oxide layer and a silicon oxynitride layer, and/or, The thickness of the first tunneling layer is 1.5 nm-2.5 nm or 1.8 nm-2.2 nm, and/or, The first doped layer is a doped polysilicon layer, and the thickness is 80 nm-400 nm or 200 nm-300 nm; the second tunneling layer is any one or a combination of more than one of a silicon oxide layer and a silicon oxynitride layer, and/or, The thickness of the second tunneling layer is 1.5 nm-2.5 nm or 1.8 nm-2.2 nm, and/or, The second doped layer is a doped polysilicon layer with the thickness of 80 nm-400 nm or 200 nm-300 nm and/or, The silicon substrate is an N-type silicon substrate, the first doping layer is an N-type doping layer, and the second doping layer is a P-type doping layer.
13. 13. The solar cell of claim 1, wherein a first passivation layer is disposed on the first surface and a second passivation layer is disposed on the second surface.
14. 14. The solar cell of claim 13, wherein the first passivation layer comprises a combination of one or more of a silicon oxide layer, an aluminum oxide layer, a silicon nitride layer, and a silicon oxynitride layer, and/or, The thickness of the first passivation layer is 3 nm-6 nm, and/or, The second passivation layer includes a combination of one or more of a silicon oxide layer, an aluminum oxide layer, a silicon nitride layer, and a silicon oxynitride layer.
15. 15. A photovoltaic module comprising a solar cell according to any one of claims 1 to 14.

Description

Solar cell and photovoltaic module Technical Field The utility model belongs to the technical field of solar cells, and particularly relates to a solar cell and a photovoltaic module. Background With the rapid development of the photovoltaic industry, the performance and efficiency requirements of the photovoltaic market at home and abroad on the solar battery are continuously improved, and manufacturers in the industry are forced to research and develop the efficient battery. TOPCon (Tunnel Oxide Passivated Contact, tunneling oxide passivation contact) battery is capable of improving passivation performance of the battery surface, reducing metal contact composite current and effectively improving open-circuit voltage and short-circuit current of the battery by sequentially preparing an ultrathin tunneling oxide layer and a doped polysilicon layer on the back of the battery. The TOPCon battery in the prior art is usually of a single-sided TOPCon structure, the front side is usually provided with an emitter electrode by adopting a boron diffusion process, after the front side metal electrode is arranged, the front side metal electrode is directly contacted with a silicon substrate, the reverse saturation current density of a metal area is large, and the improvement of the battery efficiency is limited. The information disclosed in this background section is only for enhancement of understanding of the general background of the utility model and should not be taken as an acknowledgement or any form of suggestion that this information forms the prior art already known to a person of ordinary skill in the art. Disclosure of utility model The utility model aims to provide a solar cell and a photovoltaic module, which can improve the reverse saturation current density of a metal area and improve the cell efficiency. In order to achieve the above object, a specific embodiment of the present utility model provides the following technical solution: a solar cell, comprising: A silicon substrate having a first surface and a second surface disposed opposite to each other; the first tunneling passivation structure is positioned on the first surface and comprises a first tunneling layer and a first doping layer which are sequentially stacked, and the doping type of the first doping layer is the same as that of the silicon substrate; A first electrode on the first surface and in electrical contact with the first doped layer; the second tunneling passivation structure is positioned on the second surface and comprises a second tunneling layer and a second doping layer which are sequentially stacked, and the doping type of the second doping layer is opposite to that of the silicon substrate; And a second electrode on the second surface and in electrical contact with the second doped layer. In one or more embodiments of the utility model, the first surface is a polished surface or a light trapping structure textured surface, and/or, The second surface is a polished surface. In one or more embodiments of the utility model, the first surface is a polished surface, and/or, The second surface is a polished surface or a light trapping structure suede. In one or more embodiments of the present utility model, the first surface includes a first region and a second region spaced apart, and the first tunneling passivation structure is located in the first region. In one or more embodiments of the utility model, the first area of the first surface is a polished surface or a light trapping structure textured surface, and/or, The second area of the first surface is a light trapping structure suede. In one or more embodiments of the utility model, the first and second regions of the first surface are polished surfaces. In one or more embodiments of the utility model, the first surface is recessed in the second region relative to the first region. In one or more embodiments of the present utility model, the second surface includes third and fourth regions spaced apart, and the second tunneling passivation structure is located in the third region. In one or more embodiments of the utility model, the third and fourth regions of the second surface are polished surfaces. In one or more embodiments of the utility model, the third region of the second surface is a polished surface or a light trapping structure textured surface, and/or, And the fourth area of the second surface is a light trapping structure suede. In one or more embodiments of the utility model, the second surface is recessed in the fourth region relative to the third region. In one or more embodiments of the present utility model, the first tunneling layer is a combination of any one or more of a silicon oxide layer, a silicon oxynitride layer, and/or, The thickness of the first tunneling layer is 1.5 nm-2.5 nm or 1.8 nm-2.2 nm, and/or, The first doped layer is a doped polysilicon layer, and the thickness is 80 nm-400 nm or 200 nm-300 nm; the second tunneling layer is any one or