Search

CN-224234081-U - Image sensor and electronic device

CN224234081UCN 224234081 UCN224234081 UCN 224234081UCN-224234081-U

Abstract

The utility model provides an image sensor and electronic equipment, wherein a first welding pad is arranged at the position of a shading pixel area, and the first welding pad for combining CP test and packaging bonding is arranged at one side close to the shading pixel area in the process of preparing the welding pad in a peripheral area, so that part of the first welding pad is separated from a light-transmitting pixel area, reflected light on the first welding pad almost falls on the shading pixel area, the reflected light is reduced or even prevented from entering the light-transmitting pixel area, the glare phenomenon is reduced, and the imaging quality of the image sensor is improved.

Inventors

  • Liao Guankai
  • SUN SAI

Assignees

  • 思特威(上海)电子科技股份有限公司

Dates

Publication Date
20260512
Application Date
20250515

Claims (9)

  1. 1. An image sensor, characterized in that, the image sensor includes: a substrate having opposite front and back surfaces, the substrate including a pixel region including at least a plurality of photoelectric conversion pixels and a peripheral region disposed at an outer periphery of the pixel region; the pixel region comprises a light-transmitting pixel region and a shading pixel region, and the shading pixel region is arranged on at least one side of the outer side of the light-transmitting pixel region; the plurality of welding pads are arranged on the outer periphery of the peripheral area and are distributed along the extending direction of the outer periphery, wherein the welding pads comprise first welding pads which are formed on one side close to the shading pixel area and comprise a CP test area and a bonding area; the shading shielding layer is arranged on the shading pixel area.
  2. 2. The image sensor of claim 1 further comprising a trench isolation structure and an electrical connection trench, wherein the trench isolation structure extends inward from the surfaces of the pixel region and the peripheral region, and the electrical connection trench extends inward from the surface of the peripheral region.
  3. 3. The image sensor of claim 1, wherein the bonding pad further comprises a second bonding pad, and wherein the planar area of the first bonding pad is greater than the planar area of the second bonding pad.
  4. 4. The image sensor of claim 3, wherein the planar area of the first bonding pad is 2-5 times that of the second bonding pad, and/or the size of the first bonding pad is (80-100) μm (140-180) μm, and the size of the second bonding pad is (70-90) μm, and/or the cross section of the first bonding pad is rectangular, and the cross section of the second bonding pad is square, and/or the cross sections of the first bonding pad and the second bonding pad are regular patterns, the center distance between two adjacent second bonding pads is equal to the center distance between two adjacent first bonding pads, and the size of the first bonding pad facing the side of the pixel area is larger than the size of the second bonding pad facing the side of the pixel area.
  5. 5. The image sensor of claim 3, wherein a portion of the second pads are disposed on the same side as the first pads and are arranged along an extending direction of the outer periphery, and another portion of the second pads are disposed on other outer peripheries of the peripheral area or all of the second pads are disposed on other outer peripheries of the peripheral area where the first pads are disposed.
  6. 6. The image sensor as in claim 5, wherein the second pads are provided at each of four ends of the outer periphery of the peripheral region.
  7. 7. The image sensor of claim 3, wherein the first pads are alternately spaced apart from the second pads, or wherein the first pads are disposed at corners of the pixel region, and wherein other peripheral regions are disposed as the second pads, or wherein the first pads are disposed on adjacent sides of the pixel region, and wherein the remaining adjacent sides are disposed as the second pads, or wherein the first pads are disposed on opposite sides of the pixel region, and wherein the second pads are disposed on opposite sides of the pixel region.
  8. 8. The image sensor of claim 1, wherein the light-shielding pixel regions are disposed on opposite sides of the outside of the light-transmitting pixel region, and/or wherein the bonding pads are first bonding pads disposed around the pixel region.
  9. 9. An electronic device comprising an image sensor according to any one of claims 1 to 8.

Description

Image sensor and electronic device Technical Field The present utility model relates to the field of CMOS image sensors, and in particular, to an image sensor and an electronic device. Background The image sensor converts the light image on the light sensing surface into an electric signal in a corresponding proportional relation with the light image by utilizing the photoelectric conversion function of the photoelectric device. Two major classes, CCD (charge coupled device) and CMOS (metal oxide semiconductor device), can be distinguished according to the device. With the continuous development of CMOS Image Sensor (CIS) design and manufacturing processes, CMOS image sensors have become the mainstream in place of CCD image sensors. The CIS structure is mainly divided into a pixel region corresponding to one or more image pixels, corresponding pixel circuits and optical components, and a peripheral region corresponding to a signal line connecting the pixels and an external device, a peripheral circuit connected to the pixels, and/or a PAD (PAD). COB packages (Chip On Board) are increasingly being used in vehicle applications. COB packages are punched from the front side (namely the PAD side) of the wafer, but because the PAD is shared by the CP test and the package, damage can be generated to the PAD after the CP pinning test is finished, the bonding strength of the COB packages is reduced during subsequent packaging, the problem of low packaging yield is caused by difficult wire bonding, meanwhile, in the CIS image sensor, the problem of glare (flare) caused by the structure of the periphery of a pixel area is obvious, particularly, the problem of reduced imaging quality is caused by the glare phenomenon caused by COB package application. It should be noted that the foregoing description of the background art is only for the purpose of providing a clear and complete description of the technical solution of the present application and is presented for the convenience of understanding by those skilled in the art. The above-described solutions are not considered to be known to the person skilled in the art simply because they are set forth in the background of the application section. Disclosure of utility model In view of the above-mentioned drawbacks of the prior art, an object of the present utility model is to provide an image sensor and an electronic device, which are used for solving the problem that in the prior art, the use of a large PAD design in COB packaging application of a CIS image sensor causes glare and reduces imaging quality. To achieve the above and other related objects, the present utility model provides an image sensor comprising: a substrate having opposite front and back surfaces, the substrate including a pixel region including at least a plurality of photoelectric conversion pixels and a peripheral region disposed at an outer periphery of the pixel region; the pixel region comprises a light-transmitting pixel region and a shading pixel region, and the shading pixel region is arranged on at least one side of the outer side of the light-transmitting pixel region; the plurality of welding pads are arranged on the outer periphery of the peripheral area and are distributed along the extending direction of the outer periphery, wherein the welding pads comprise first welding pads which are formed on one side close to the shading pixel area and comprise a CP test area and a bonding area; the shading shielding layer is arranged on the shading pixel area. The pixel region and the peripheral region are provided with a plurality of grooves, and the pixel region and the peripheral region are provided with a plurality of grooves. Optionally, the bonding pad further comprises a second bonding pad, and the plane area of the first bonding pad is larger than that of the second bonding pad. Optionally, the planar area of the first bonding pad is between 2 and 5 times of the planar area of the second bonding pad. Optionally, the first bonding pad has a size range of (80-100) μm (140-180) μm and the second bonding pad has a size range of (70-90) μm. Optionally, the cross section of the first welding pad is rectangular, and the cross section of the second welding pad is square. Optionally, the cross sections of the first welding pads and the second welding pads are regular patterns, the center-to-center distance between two adjacent second welding pads is equal to the center-to-center distance between two adjacent first welding pads, and the size of the first welding pads facing the side of the pixel area is larger than the size of the second welding pads facing the side of the pixel area. Optionally, one part of the second welding pads are arranged on the same side as the first welding pads and are distributed along the extending direction of the outer periphery, and the other part of the second welding pads are arranged on other outer peripheries of the peripheral area. Optionally, all the second bondi