CN-224234091-U - Solar cell and photovoltaic module

CN224234091UCN 224234091 UCN224234091 UCN 224234091UCN-224234091-U

Abstract

The utility model discloses a solar cell and a photovoltaic module, wherein the solar cell comprises a silicon substrate, the silicon substrate comprises a first surface and a second surface which are oppositely arranged, the second surface comprises a first area and a second area which are distributed at intervals, a tunneling passivation contact structure is arranged on the first area, a first textured structure is formed on the surface of the silicon substrate in the first area, a second textured structure is formed on the surface of the silicon substrate in the second area, and the specific surface area of the second textured structure is smaller than that of the first textured structure. According to the utility model, the suede structures with different specific surface areas are formed in different areas on the back of the silicon substrate, so that the contact performance of the back electrode can be ensured, the passivation performance and the double-sided rate are both considered, and the battery efficiency can be remarkably improved by optimizing the back structure.

Inventors

YE XIAOYA
CHEN YANG
CHEN HAIYAN
LI XINYUE
DENG WEIWEI
XU TAO

Assignees

扬州阿特斯太阳能电池有限公司

Dates

Publication Date: 20260512
Application Date: 20250429

Claims (12)

1. The solar cell is characterized by comprising a silicon substrate, wherein the silicon substrate comprises a first surface and a second surface which are oppositely arranged, the second surface comprises a first area and a second area which are distributed at intervals, a tunneling passivation contact structure is arranged on the first area, a first suede structure is formed on the surface of the silicon substrate in the first area, a second suede structure is formed on the surface of the silicon substrate in the second area, and the specific surface area of the second suede structure is smaller than that of the first suede structure.
2. The solar cell according to claim 1, wherein the specific surface area of the first suede structure is greater than or equal to 1.1 and less than or equal to 1.5, and/or, The specific surface area of the second suede structure is more than 1 and less than or equal to 1.1.
3. The solar cell of claim 1, wherein the first pile structure and the second pile structure are both pyramid pile structures.
4. The solar cell according to claim 3, wherein the average size of the pyramids in the first pile structure is larger than the average size of the pyramids in the second pile structure, and/or, The density of pyramids in the first pile structure is less than the density of pyramids in the second pile structure.
5. The solar cell according to claim 3, wherein the pyramids in the first pile structure have a width of 0.1 μm to 5 μm, a height of 0.1 μm to 5 μm, a density of 5E4mm -2 ～2E5mm -2 , and/or, The width of the pyramid in the second suede structure is 0.1-2 mu m, the height is 0.1-2 mu m, and the density is 5E4mm -2 ～2.5E5mm -2 .
6. The solar cell according to claim 1, wherein the first region has a width of 20 μm to 600 μm and/or, The area of the first area accounts for 5% -10% of the whole second surface area.
7. The solar cell of claim 1, wherein the second surface of the silicon substrate is recessed in the second region.
8. The solar cell of claim 1, wherein the tunneling passivation contact structure comprises a tunneling layer in direct contact with the silicon substrate and a second doped layer disposed on the tunneling layer, the second doped layer having a doping type that is the same as the doping type of the silicon substrate, the first region being provided with a second electrode in contact with the second doped layer.
9. The solar cell according to claim 1, wherein a second passivation layer and/or a second anti-reflection layer is laminated on the tunneling passivation contact structure of the first region and/or the second textured structure of the second region.
10. The solar cell according to claim 1, wherein a first doped layer and a first electrode are formed on the first surface of the silicon substrate, the doping type of the first doped layer is opposite to the doping type of the silicon substrate, and the first electrode is in contact with the first doped layer.
11. The solar cell according to claim 10, characterized in that a first passivation layer and/or a first anti-reflection layer is laminated on the first doped layer.
12. A photovoltaic module, characterized in that it comprises the solar cell of any one of claims 1 to 11.

Description

Solar cell and photovoltaic module Technical Field The utility model belongs to the technical field of solar cells, and particularly relates to a solar cell and a photovoltaic module. Background With the rapid development of the photovoltaic industry, the performance and efficiency requirements of the photovoltaic market at home and abroad on the solar battery are continuously improved, and manufacturers in the industry are forced to research and develop the efficient battery. TOPCon (Tunnel Oxide Passivated Contact, tunneling oxide passivation contact) battery is capable of improving the passivation performance of the battery surface, reducing the metal contact composite current and effectively improving the open-circuit voltage and the short-circuit current of the battery by sequentially preparing an ultrathin tunneling oxide layer and a doped polysilicon layer on the back of a silicon substrate. In recent years, the market share of TOPCon cells has rapidly increased, and more than PERC cells have become the dominant technology for solar cells. The back of TOPCon battery adopts tunnel oxide layer and doped polysilicon layer to form tunnel passivation structure, the battery efficiency has obvious gain, the thicker the thickness of the doped polysilicon on the back is, the larger the metal slurry burning-through resistant window is, but the higher the parasitic absorption is, so that one of the effective schemes of TOPCon battery is a back SE (SELECTIVE EMITTER ) structure, and the parasitic absorption of the long wave band on the back is reduced by reducing the thickness of the doped polysilicon in the non-metal area. In the solar cell with the existing back surface SE structure, in order to reduce parasitic absorption of the back surface and improve passivation performance of the back surface, the back surface of the silicon substrate is generally subjected to alkali polishing to form a polished surface, but the contact performance under the electrode of the metal area is poor, the contact resistivity of the electrode is high, and the double-sided rate is low, so that improvement of the cell efficiency is limited. Accordingly, in order to solve the above-mentioned problems, it is necessary to provide a solar cell and a photovoltaic module. Disclosure of utility model The utility model aims to provide a solar cell and a photovoltaic module, which are used for improving the double-sided rate and the cell efficiency on the premise of considering the metal contact performance and the passivation performance. In order to achieve the above object, an embodiment of the present utility model provides the following technical solution: the solar cell comprises a silicon substrate, wherein the silicon substrate comprises a first surface and a second surface which are oppositely arranged, the second surface comprises a first area and a second area which are distributed at intervals, a tunneling passivation contact structure is arranged on the first area, a first textured structure is formed on the surface of the silicon substrate in the first area, a second textured structure is formed on the surface of the silicon substrate in the second area, and the specific surface area of the second textured structure is smaller than that of the first textured structure. In one embodiment, the specific surface area of the first pile structure is greater than or equal to 1.1 and less than or equal to 1.5, and/or, The specific surface area of the second suede structure is more than 1 and less than or equal to 1.1. In an embodiment, the first pile structure and the second pile structure are pyramid pile structures. In one embodiment, the average size of the pyramids in the first pile structure is greater than the average size of the pyramids in the second pile structure, and/or, The density of pyramids in the first pile structure is less than the density of pyramids in the second pile structure. In one embodiment, the pyramids in the first pile structure have a width of 0.1 μm to 5 μm, a height of 0.1 μm to 5 μm, a density of 5E4mm -2～2E5mm-2, and/or, The width of the pyramid in the second suede structure is 0.1-2 mu m, the height is 0.1-2 mu m, and the density is 5E4mm -2～2.5E5mm-2. In one embodiment, the first region has a width of 20 μm to 600 μm, and/or, The area of the first area accounts for 5% -10% of the whole second surface area. In an embodiment, the second surface of the silicon substrate is concavely disposed in the second area. In an embodiment, the tunneling passivation contact structure includes a tunneling layer directly contacting the silicon substrate and a second doped layer disposed on the tunneling layer, the doping type of the second doped layer is the same as that of the silicon substrate, and the first region is provided with a second electrode contacting the second doped layer. In an embodiment, a second passivation layer and/or a second anti-reflection layer is laminated on the tunneling passivation contac