CN-224234093-U - LED chip, high-voltage LED chip and light-emitting device

Abstract

The utility model provides an LED chip, a high-voltage LED chip and a light-emitting device, wherein a first insulating layer is arranged on the surface of a transparent conductive layer, the first insulating layer is provided with a through hole arrangement area, the through hole arrangement area is provided with a plurality of through holes, and patterns are formed through the through holes, so that the surface structure of the LED is changed, the total reflection is reduced, and more light escapes through the through holes. In addition, according to the technical scheme, the first insulating layer, the transparent conducting layer, the second insulating layer and the second electrode are provided with the composite area, so that an ODR structure is formed through the mutual structural relation among the transparent conducting layer, the first insulating layer, the second electrode and the second insulating layer, light rays can form total reflection in the composite area, and the light rays of the second electrode corresponding to the composite area are taken out from the upper surface of the LED chip after being reflected, so that the light extraction efficiency is effectively improved.

Inventors

• YANG DEYOU
• YE LINGNA
• FEI YUNRUI
• WU XINGEN
• CHEN SHUAICHENG
• HE JIAN
• ZHANG JIAHONG

Assignees

• 厦门乾照光电股份有限公司

Dates

Publication Date

20260512

Application Date

20250307

Claims (20)

1. 1. The utility model provides a LED chip, includes the substrate and set up in the substrate surface and through the mutual a plurality of LED lighting unit of keeping apart of slot, its characterized in that, LED lighting unit includes: the epitaxial layer comprises a first type semiconductor layer, an active region and a second type semiconductor layer which are sequentially stacked along a first direction, and a partial area of the epitaxial layer is etched until the first type semiconductor layer forms a groove and a light-emitting table top, wherein the first direction is perpendicular to the substrate and is directed to the epitaxial layer by the substrate; A transparent conductive layer laminated on the light emitting mesa and having a second hole exposing a portion of the second type semiconductor layer; the first insulating layer is formed on the surface of one side of the transparent conducting layer, which is away from the epitaxial lamination, and is provided with a through hole arrangement area, wherein the through hole arrangement area is provided with a plurality of through holes; a first electrode laminated on a part of the surface of the recess and disposed away from the light emitting mesa; A second electrode extending to a part of the surface of the first insulating layer by being disposed in the second hole; And the second insulating layer is arranged on the surface of the epitaxial lamination and exposes at least part of the surfaces of the first electrode and the second electrode.
2. 2. The LED chip of claim 1, wherein said first insulating layer comprises a first region and a second region, said first region being located under said second electrode, said second region being all but the first region of the first insulating layer, and said via-hole-disposing region being located in said second region.
3. 3. The LED chip of claim 1, wherein said via placement area is located above said light emitting mesa.
4. 4. The LED chip of claim 3, wherein each of said through holes exposes a portion of the surface of said transparent conductive layer.
5. 5. The LED chip of claim 3, wherein at least a portion of said vias extend from said first insulating layer down to a surface of said second type semiconductor layer.
6. 6. The LED chip of claim 3, wherein said via placement area extends from above said light emitting mesa to a sidewall of said light emitting mesa.
7. 7. The LED chip of claim 1, wherein said first insulating layer extends from the surface of said transparent conductive layer to said recess and has a first hole exposing a portion of said first semiconductor layer, said first electrode being formed on the surface of said recess by being embedded in said first hole.
8. 8. The LED chip of claim 1, wherein the surface area of said light emitting mesa is S 3 and the total surface area of all said through holes is S 4 , then 0.1 x S 3 ≤S 4 ≤0.9*S 3 .
9. 9. The LED chip of claim 1, wherein the exposed portion of the first insulating layer forms a step with the transparent conductive layer, and the second electrode extends to the surface of the first insulating layer through the step.
10. 10. The LED chip of claim 9, wherein the projection of said second electrode onto said transparent conductive layer and the projection of said second electrode onto said first insulating layer have partially overlapping areas with an area S a , and the projection area of said second electrode onto said transparent conductive layer is S 1 , 0<S a ≤S 1 /2.
11. 11. The LED chip of claim 9, wherein said step is disposed around an edge of said second hole.
12. 12. The LED chip of claim 1, wherein a current blocking layer is disposed on a bottom surface of said second hole.
13. 13. The LED chip of claim 12, wherein said current blocking layer forms a spacer groove with said transparent conductive layer and said second electrode is embedded in said spacer groove to form a contact with said second semiconductor layer.
14. 14. The LED chip of claim 12, wherein the current blocking layer has a projected area S 2 and the second hole has a bottom area S 3 , then 0<S 2 ≤S 3 /2.
15. 15. The LED chip of claim 12, wherein said first insulating layer and said current blocking layer are formed simultaneously by photolithography of a transparent dielectric layer.
16. 16. The LED chip of claim 15, wherein said transparent dielectric layer comprises one of silicon oxide, silicon nitride, aluminum oxide, magnesium fluoride.
17. 17. The LED chip of claim 1, further comprising an index matching layer disposed on a side surface of said second insulating layer facing away from said epitaxial stack and forming a graded index structure with said second insulating layer, wherein the index of refraction of said index matching layer is not less than the index of refraction of said second insulating layer.
18. 18. The LED chip of claim 1, further comprising a reflective layer on a surface of said substrate facing away from said epitaxial stack.
19. 19. The LED chip of claim 4, wherein the first electrode comprises a first electrode pad disposed at a first end of the LED chip, the second hole is formed at a second end of the LED chip, the second electrode comprises a second electrode pad and at least one electrode extension connected with the second electrode pad, wherein the second electrode pad extends to the surface of the first insulating layer by being disposed at the second hole, and the electrode extension extends from the second electrode pad toward the second end of the LED chip.
20. 20. The LED chip of claim 19, wherein the electrode extension of said second electrode has an interdigital, said interdigital being in contact with said transparent conductive layer by way of a portion of said via embedded in said first insulating layer.

Description

LED chip, high-voltage LED chip and light-emitting device Technical Field The utility model relates to the field of LED chips, in particular to an LED chip, a high-voltage LED chip and a light-emitting device. Background The light emitting Diode (LIGHT EMITTING Diode, LED) has the advantages of high efficiency, long service life, small volume, low power consumption and the like, and is widely applied to the fields of indoor and outdoor white light illumination, screen display, backlight sources and the like. The LED chip has the function of converting electric energy into light energy, and concretely comprises an epitaxial wafer, and an N-type electrode and a P-type electrode which are respectively arranged on the epitaxial wafer. The epitaxial wafer comprises a P-type semiconductor layer, an N-type semiconductor layer and an active layer positioned between the N-type semiconductor layer and the P-type semiconductor layer, when current passes through the LED chip, holes in the P-type semiconductor and electrons in the N-type semiconductor move to the active layer and are combined in the active layer, so that the LED chip emits light. In order to ensure the application performance of the LED product while the LED application market (especially the display screen application) is continuously expanding, LED packaging manufacturers have higher requirements on the light extraction efficiency and the reliability of the LED chip. At present, the quantum efficiency in most LED chips is close to 99%, but the light extraction efficiency is generally lower, and the most main factors include 1 that the light source generated by the light-emitting layer can be only a small part taken out due to the severe total reflection phenomenon in the LED chips, and 2 that the light-emitting efficiency of the LED chips is low due to the current crowding effect. The main factors of the reliability problem of the LED chip include that 1, the bottom of the P pad area is more in contact with the functional dielectric layer, such as a current blocking layer (CB layer in the field) and a transparent conductive layer (ITO layer in the field), the structure is easy to cause the risk of welding collapse or welding crack of the contacted functional dielectric layer, and the reliability of the LED chip is further affected. 2. In actual work, the LED chip can generate micro short circuit in a reverse pressure environment due to water vapor permeation, so that the LED chip finally burns out a dead lamp, the reliability of the LED chip in actual application is affected, and the actual application of the LED chip is limited. Therefore, how to improve the light extraction efficiency and reliability of the LED chip without affecting the photoelectric performance is a technical problem to be solved. In view of this, the present inventors have specifically devised an LED chip, a high-voltage LED chip, and a light emitting device, which are produced thereby. Disclosure of utility model The utility model aims to provide an LED chip, a high-voltage LED chip and a light-emitting device, which are used for solving the technical problems of low light-emitting efficiency and poor reliability of the LED chip in the prior art. In order to achieve the above purpose, the technical scheme adopted by the utility model is as follows: An LED chip, includes the substrate and set up in the substrate surface and a plurality of LED light emitting unit of mutual isolation through the slot, LED light emitting unit includes: the epitaxial layer comprises a first type semiconductor layer, an active region and a second type semiconductor layer which are sequentially stacked along a first direction, and a partial area of the epitaxial layer is etched until the first type semiconductor layer forms a groove and a light-emitting table top, wherein the first direction is perpendicular to the substrate and is directed to the epitaxial layer by the substrate; A transparent conductive layer laminated on the light emitting mesa and having a second hole exposing a portion of the second type semiconductor layer; the first insulating layer is formed on the surface of one side of the transparent conducting layer, which is away from the epitaxial lamination, and is provided with a through hole arrangement area, wherein the through hole arrangement area is provided with a plurality of through holes; a first electrode laminated on a part of the surface of the recess and disposed away from the light emitting mesa; A second electrode extending to a part of the surface of the first insulating layer by being disposed in the second hole; And the second insulating layer is arranged on the surface of the epitaxial lamination and exposes at least part of the surfaces of the first electrode and the second electrode. Preferably, the first insulating layer includes a first region and a second region, the first region is located below the second electrode, the second region is all regions of the first