CN-224234094-U - LED chip, high-voltage LED chip and light-emitting device

Abstract

The utility model provides an LED chip, a high-voltage LED chip and a light-emitting device, which are arranged in a mode that an epitaxial lamination comprises a first type semiconductor layer, an active area and a second type semiconductor layer which are sequentially stacked along a first direction, a partial area of the epitaxial lamination is etched to the first type semiconductor layer to form a groove and a light-emitting table surface, a transparent conducting layer is laminated on the light-emitting table surface and is provided with a second hole exposing a part of the second type semiconductor layer, a first insulating layer is formed on one side surface of the transparent conducting layer, which is away from the epitaxial lamination, a first electrode is laminated on a part of the surface of the groove and is away from the light-emitting table surface, a second electrode extends to a part of the surface of the first insulating layer in a mode of being arranged on the second hole, and the second insulating layer is arranged on the surface of the epitaxial lamination and at least exposes a part of the surfaces of the first electrode and the second electrode.

Inventors

• CHEN SHUAICHENG
• YE LINGNA
• YANG DEYOU
• WU XINGEN
• HE JIAN
• FEI YUNRUI
• ZHANG JIAHONG

Assignees

• 厦门乾照光电股份有限公司

Dates

Publication Date

20260512

Application Date

20250307

Claims (20)

1. 1. The utility model provides a LED chip, includes the substrate and set up in the substrate surface and through the mutual a plurality of LED lighting unit of keeping apart of slot, its characterized in that, LED lighting unit includes: the epitaxial layer comprises a first type semiconductor layer, an active region and a second type semiconductor layer which are sequentially stacked along a first direction, and a partial area of the epitaxial layer is etched until the first type semiconductor layer forms a groove and a light-emitting table top, wherein the first direction is perpendicular to the substrate and is directed to the epitaxial layer by the substrate; A transparent conductive layer laminated on the light emitting mesa and having a second hole exposing a portion of the second type semiconductor layer; The first insulating layer is formed on the surface of one side of the transparent conducting layer, which faces away from the epitaxial lamination; a first electrode laminated on a part of the surface of the recess and disposed away from the light emitting mesa; A second electrode extending to a part of the surface of the first insulating layer by being disposed in the second hole; And the second insulating layer is arranged on the surface of the epitaxial lamination and exposes at least part of the surfaces of the first electrode and the second electrode.
2. 2. The LED chip of claim 1, wherein the exposed portion of the first insulating layer forms a step with the transparent conductive layer, and the second electrode extends to the surface of the first insulating layer through the step.
3. 3. The LED chip of claim 1, wherein the projection of said second electrode onto said transparent conductive layer and the projection of said second electrode onto said first insulating layer have partially overlapping areas with an area S a , and the projection area of said second electrode onto said transparent conductive layer is S 1 , 0<S a ≤S 1 /2.
4. 4. The LED chip of claim 2, wherein said step is disposed around an edge of said second hole.
5. 5. The LED chip of claim 1, wherein a current blocking layer is disposed on a bottom surface of said second hole.
6. 6. The LED chip of claim 5, wherein said current blocking layer forms a spacer groove with said transparent conductive layer and said second electrode is embedded in said spacer groove to form a contact with said second semiconductor layer.
7. 7. The LED chip of claim 6, wherein the current blocking layer has a projected area S 2 and the second hole has a bottom area S 3 , then 0<S 2 ≤S 3 /2.
8. 8. The LED chip of claim 7, wherein said first insulating layer and said current blocking layer are formed simultaneously by photolithography of a transparent dielectric layer.
9. 9. The LED chip of claim 8, wherein said transparent dielectric layer comprises one of silicon oxide, silicon nitride, aluminum oxide, magnesium fluoride.
10. 10. The LED chip of claim 1, wherein a third insulating layer is further disposed on the surface of said recess, and said third insulating layer has a first hole exposing a portion of said first semiconductor layer, and wherein said first electrode is laminated on the surface of said third insulating layer by being inserted into said first hole.
11. 11. The LED chip of claim 10, wherein said first insulating layer and said third insulating layer are formed simultaneously by photolithography on a transparent dielectric layer.
12. 12. The LED chip of claim 1, further comprising an index matching layer disposed on a side surface of said second insulating layer facing away from said epitaxial stack and forming a graded index structure with said second insulating layer, wherein the index of refraction of said index matching layer is not less than the index of refraction of said second insulating layer.
13. 13. The LED chip of claim 1, wherein a reflective layer is further provided on a side surface of said substrate opposite said epitaxial stack.
14. 14. The LED chip of claim 1, wherein said first electrode comprises a first electrode pad disposed at a first end of said LED chip, said second hole is formed at a second end of said LED chip, said second electrode comprises a second electrode pad and at least one electrode extension connected to said second electrode pad, wherein said second electrode pad extends to a surface of said first insulating layer by being disposed at said second hole, and said electrode extension extends from said second electrode pad toward said second end of said LED chip.
15. 15. The LED chip of claim 14, wherein at least a portion of the area of said electrode extension is in contact with said transparent conductive layer.
16. 16. The LED chip of claim 15, wherein said electrode extension has an interdigital, said interdigital being in contact with said transparent conductive layer by way of a through hole embedded in said first insulating layer.
17. 17. The LED chip of claim 1, wherein said second insulating layer covers said light emitting mesa and said recess in such a manner as to be held at the exposed face of the first semiconductor layer.
18. 18. The high-voltage LED chip is characterized in that the high-voltage LED chip electrically interconnects adjacent LED light-emitting units according to any one of claims 1 to 17 through a bridging electrode, wherein an insulating layer is further arranged in the groove, and the bridging electrode is connected with two adjacent LED units through being laminated on the insulating layer.
19. 19. A light-emitting device, characterized in that it comprises a light-emitting diode employing the LED chip as claimed in any one of claims 1 to 17.
20. 20. A light emitting device comprising a light emitting diode employing the high voltage LED chip of claim 18.

Description

LED chip, high-voltage LED chip and light-emitting device Technical Field The utility model relates to the field of LED chips, in particular to an LED chip, a high-voltage LED chip and a light-emitting device. Background The light emitting Diode (LIGHT EMITTING Diode, LED) has the advantages of high efficiency, long service life, small volume, low power consumption and the like, and is widely applied to the fields of indoor and outdoor white light illumination, screen display, backlight sources and the like. The LED chip has the function of converting electric energy into light energy, and concretely comprises an epitaxial wafer, and an N-type electrode and a P-type electrode which are respectively arranged on the epitaxial wafer. The epitaxial wafer comprises a P-type semiconductor layer, an N-type semiconductor layer and an active layer positioned between the N-type semiconductor layer and the P-type semiconductor layer, when current passes through the LED chip, holes in the P-type semiconductor and electrons in the N-type semiconductor move to the active layer and are combined in the active layer, so that the LED chip emits light. In order to ensure the application performance of the LED product while the LED application market (especially the display screen application) is continuously expanding, LED packaging manufacturers have higher requirements on the light extraction efficiency and the reliability of the LED chip. At present, the quantum efficiency in most LED chips is close to 99%, but the light extraction efficiency is generally lower, and the most main factors include 1 that the light source generated by the light-emitting layer can be only a small part taken out due to the severe total reflection phenomenon in the LED chips, and 2 that the light-emitting efficiency of the LED chips is low due to the current crowding effect. The main factors of the reliability problem of the LED chip include that 1, the bottom of the P pad area is more in contact with the functional dielectric layer, such as a current blocking layer (CB layer in the field) and a transparent conductive layer (ITO layer in the field), the structure is easy to cause the risk of welding collapse or welding crack of the contacted functional dielectric layer, and the reliability of the LED chip is further affected. 2. In actual work, the LED chip can generate micro short circuit in a reverse pressure environment due to water vapor permeation, so that the LED chip finally burns out a dead lamp, the reliability of the LED chip in actual application is affected, and the actual application of the LED chip is limited. Therefore, how to improve the light extraction efficiency and reliability of the LED chip without affecting the photoelectric performance is a technical problem to be solved. In view of this, the present inventors have specifically devised an LED chip, a high-voltage LED chip, and a light emitting device, which are produced thereby. Disclosure of utility model The utility model aims to provide an LED chip, a high-voltage LED chip and a light-emitting device, which are used for solving the technical problems of low light-emitting efficiency and poor reliability of the LED chip in the prior art. In order to achieve the above purpose, the technical scheme adopted by the utility model is as follows: The utility model provides a LED chip, includes the substrate and set up in the substrate surface and through the mutual a plurality of LED lighting unit of keeping apart of slot, its characterized in that, LED lighting unit includes: the epitaxial layer comprises a first type semiconductor layer, an active region and a second type semiconductor layer which are sequentially stacked along a first direction, and a partial area of the epitaxial layer is etched until the first type semiconductor layer forms a groove and a light-emitting table top, wherein the first direction is perpendicular to the substrate and is directed to the epitaxial layer by the substrate; A transparent conductive layer laminated on the light emitting mesa and having a second hole exposing a portion of the second type semiconductor layer; The first insulating layer is formed on the surface of one side of the transparent conducting layer, which faces away from the epitaxial lamination; a first electrode laminated on a part of the surface of the recess and disposed away from the light emitting mesa; A second electrode extending to a part of the surface of the first insulating layer by being disposed in the second hole; And the second insulating layer is arranged on the surface of the epitaxial lamination and exposes at least part of the surfaces of the first electrode and the second electrode. Preferably, a bare portion of the first insulating layer forms a step, and the second electrode extends to a surface of the first insulating layer through the step. Preferably, the projection of the second electrode on the transparent conductive layer and the projection of the