CN-224234101-U - Light-emitting semiconductor device

CN224234101UCN 224234101 UCN224234101 UCN 224234101UCN-224234101-U

Abstract

The utility model relates to a luminous semiconductor device, which relates to the technical field of luminous semiconductors and comprises a conductive carrier, wherein no less than two groups of independently controllable carrier units with positive and negative poles are arranged in the conductive carrier, chips which are communicated with the positive and negative poles of the carrier units are arranged on any group of carrier units, at least one chip is provided with a light transmission unit, retaining walls for blocking light around the chips and the light transmission unit are filled in the circumferential direction of the light transmission unit, the chips with any size can be covered, the thickness and the shape of the light transmission unit are ensured, the light around the chips and the light transmission unit can be blocked by the retaining walls, so that the light of the chips can only be emitted from the chips and the light transmission unit, the problem of yellow circles can be effectively solved, the light emitting quality can be ensured, the light efficiency can be improved, and the independent control of circuits among the chips can be realized on the premise of ensuring the emission of multicolor colors.

Inventors

LI YUYUAN
WANG HAO
ZHU CHENG
CHEN YU
LIN JIYANG
WAN XIHONG
LI SHENGZHE

Assignees

福建天电光电有限公司

Dates

Publication Date: 20260512
Application Date: 20250415

Claims (9)

1. The luminous semiconductor device is characterized by comprising a conductive carrier, wherein at least two groups of independently controllable carrier units with positive and negative electrodes are arranged in the conductive carrier, a chip which is communicated with the positive and negative electrodes of the carrier unit is arranged on any group of carrier units, at least one chip is provided with a light transmission unit, and a retaining wall for blocking light around the chip and the light transmission unit is filled in the circumferential direction of the light transmission unit.
2. The light-emitting semiconductor device according to claim 1, wherein the light-transmitting unit is a first silicon wafer provided on the chip.
3. The light-emitting semiconductor device according to claim 2, wherein the first silicone sheet is a silicone sheet filled with a light-emitting body which generates a light-emitting color different from that of the chip itself after excitation by the chip.
4. A light-emitting semiconductor device according to claim 3, wherein the overall color of the light-emitting body filled with the first silicone sheet on the different carrier units is different.
5. A light emitting semiconductor device according to claim 3, wherein a protective layer for covering the top of the conductive carrier is further laid on top of the first silicone sheet.
6. The light-emitting semiconductor device according to claim 1, wherein the light-transmitting unit is provided on at least two of the chips, the chips including a first chip set and a second chip set, wherein, The light transmission unit comprises a second silica gel sheet arranged on the first chip set and transparent glue arranged on the second chip set, wherein a luminophor which is used for generating luminescence colors different from the chips after being excited by the chips is arranged inside the second silica gel sheet, no luminophor is contained inside the transparent glue sheet, an excited layer is paved on the top of the retaining wall, the second silica gel sheet and the transparent glue sheet, and the excited layer can be excited by the chips covered by the excited layer and generates light rays different from the luminescence colors of the chips.
7. The light emitting semiconductor device according to claim 1, wherein a zener diode for avoiding breakdown of the chip is further provided in a conductive circuit of the chip and the carrier unit.
8. The light-emitting semiconductor device according to claim 5, wherein a light-condensing structure that increases light intensity is further provided over the protective layer.
9. The light-emitting semiconductor device according to claim 8, wherein the light-condensing structure is a light-condensing structure in which a medium for improving light efficiency and light spot is provided.

Description

Light-emitting semiconductor device Technical Field The utility model belongs to the technical field of light-emitting semiconductors, and particularly relates to a light-emitting semiconductor device. Background The semiconductor light-emitting element has the advantages of energy conservation, environmental protection, small size, long service life, high light-emitting efficiency and the like, and the light-emitting wavelength range covers the ultraviolet to infrared range, so that the semiconductor light-emitting element has wide application scenes. For example, the ultraviolet band can be applied to the fields of disinfection, sterilization, solidification, medical treatment, the infrared band can be applied to the fields of security monitoring, optocouplers, plant illumination and the like, and the visible light band can be applied to the fields of display screens, backlight sources, street lamps, car lamps and the like. At present, the processing technology of the semiconductor light-emitting element mainly comprises a spraying technology, a dispensing technology and a fluorescent layer attaching technology, but the spraying technology needs to attach an unsprayed area, the position, the shape, the thickness and the diffusion position of a sprayed chip are not well known, the once spraying passing rate is low, the dispensing technology has the defects that the shape above the chip cannot be fixed, the color concentration is poor, the light emitting effect is white at the center, the edge is blue and yellow, the fluorescent layer attaching technology is adopted, the light and the fluorescent layer around the chip are directly contacted with air, a light source device is damaged in an SMD device patch, the light around the chip can form a yellow ring, and the circuits among the chips of the existing semiconductor light-emitting element cannot be independently controlled, so that the use is inconvenient. Therefore, to the technical problem, design the luminous semiconductor device, realize pasting the chip size of any luminescent diode, solve the problem that the product filling depends on spraying, dispensing, pasting the fluorescent layer, etc., improve the yield of the product, under the precondition that the light rays with various colors can be emitted, improve the light efficiency, and can realize the independent control of the circuit between the chips, which is a technical problem that the skilled person needs to solve. Disclosure of utility model In order to solve the problems, the utility model provides a light-emitting semiconductor device, which can be used for attaching any LED chip size, solving the problems caused by depending on spraying, dispensing, attaching a fluorescent layer and the like in product filling, improving the yield of products, improving the light efficiency on the premise of ensuring that light rays with various colors can be emitted, and realizing independent control of circuits among chips. In order to achieve the above object, the present utility model provides the following solutions: the luminous semiconductor device comprises a conductive carrier, wherein no less than two groups of independently controllable carrier units with positive and negative electrodes are arranged in the conductive carrier, a chip which is communicated with the positive and negative electrodes of the carrier unit is arranged on any group of carrier units, at least one chip is provided with a light transmission unit, and retaining walls for blocking light around the chip and the light transmission unit are filled in the circumferential direction of the light transmission unit. Preferably, the light transmitting unit is a first silicon sheet disposed on the chip. Preferably, the first silicone sheet is a silicone sheet internally filled with a luminous body which generates a luminous color different from that of the chip itself after being excited by the chip. Preferably, the overall color of the light emitters filled by the first silicone sheet on the different carrier units is different. Preferably, a protective layer for covering the top of the conductive carrier is further laid on the top of the first silica gel sheet. Preferably, at least two of the chips are provided with the light-transmitting unit, the chips comprising a first chip set and a second chip set, wherein, The light transmission unit comprises a second silica gel sheet arranged on the first chip set and transparent glue arranged on the second chip set, wherein a luminophor which is used for generating luminescence colors different from the chips after being excited by the chips is arranged inside the second silica gel sheet, no luminophor is contained inside the transparent glue sheet, an excited layer is paved on the top of the retaining wall, the second silica gel sheet and the transparent glue sheet, and the excited layer can be excited by the chips covered by the excited layer and generates light rays different from the