CN-224234118-U - Heater system for semiconductor processing
Abstract
A heater system for semiconductor processing includes a susceptor, a plurality of gas treatment components, and a heater. A plurality of gas treatment components are secured to the base. The heater is disposed along the length of the susceptor and is positioned between the susceptor and the plurality of gas treatment units. The heater is configured to provide heat to the plurality of gas treatment components.
Inventors
- Terry colch
- ERIC ELLIS
Assignees
- 沃特洛电气制造公司
Dates
- Publication Date
- 20260512
- Application Date
- 20230509
- Priority Date
- 20220509
Claims (19)
- 1. A heater system for semiconductor processing, the heater system comprising: a base, a base seat and a base seat, A plurality of gas treatment components secured to the base, and A polyimide heater disposed on the base and sandwiched between the base and the plurality of gas treatment components, the heater configured to provide heat to the plurality of gas treatment components.
- 2. The heater system according to claim 1, wherein the base is in the form of a track and the heater is arranged along the length of the track.
- 3. The heater system according to claim 1, wherein the heater is selected from a layered heater, a cartridge heater, a tube heater, and a cable heater.
- 4. The heater system according to claim 1, wherein the heater extends the entire length of the base.
- 5. The heater system according to claim 1, wherein the heater comprises a continuous heating circuit.
- 6. The heater system according to claim 1, wherein the heater comprises a plurality of heating zones, and wherein each heating zone corresponds to a respective gas treatment component.
- 7. The heater system according to claim 6, wherein the plurality of heating zones are operable independently of one another.
- 8. The heater system according to claim 1, wherein the plurality of gas treatment components comprises at least one of a mass flow controller, a regulator, a valve, a gas filter, and a pressure sensor.
- 9. The heater system according to claim 1, further comprising one or more interface blocks secured to the base and disposed between the heater and a corresponding gas treatment component, wherein process gas is configured to flow through each interface block.
- 10. The heater system according to claim 1, wherein the plurality of gas treatment components are secured to the base by mechanical fasteners.
- 11. The heater system according to claim 10, wherein the mechanical fastener extends through the heater.
- 12. The heater system according to claim 1, further comprising a power lead configured to provide power to the heater, the power lead being connected to an end of the heater or a central region of the heater.
- 13. The heater system according to claim 12, wherein the power leads extend parallel or perpendicular to the heater.
- 14. The heater system according to claim 12, wherein the power lead includes a first power pin made of a first electrically conductive material and a second power pin made of a second electrically conductive material different from the first electrically conductive material, the first power pin and the second power pin forming a thermocouple junction to determine the temperature of the heater.
- 15. The heater system according to claim 14, further comprising a thermally and electrically insulating material surrounding the first and second power pins proximate the thermocouple junction.
- 16. The heater system according to claim 14, wherein the first and second power leads are connected to the heater via first and second conductive tabs, respectively.
- 17. The heater system according to claim 16, wherein the first and second conductive clips are flat and flexible.
- 18. The heater system according to claim 16, wherein the first conductive tab is made of the first conductive material and the second conductive tab is made of the second conductive material.
- 19. The heater system according to claim 16, wherein the first conductive tab is welded to the first power lead and the second conductive tab is welded to the second power lead, and wherein the bottom side of the heater and the first and second conductive tabs are covered with a dielectric material and bonded to the base.
Description
Heater system for semiconductor processing Cross Reference to Related Applications The present application claims priority and benefit from U.S. patent application Ser. No. 63/339,625, filed 5/9 of 2022. The disclosures of the above applications are incorporated herein by reference. Technical Field The present utility model relates to a heater system, and more particularly to a track mounted heater system in a pressure control manifold for delivering critical fluids for industrial processes. Background The statements in this section merely provide background information related to the present disclosure and may not constitute prior art. Pressure control manifolds are used in industrial processes to control, indicate pressure, filter and isolate gases flowing through process gas lines. Such industrial processes include, for example, semiconductor, nanotechnology, and solar process tools. These pressure control manifolds are also known in the art as "gas sticks". For semiconductor processing, each piece of equipment within the system is controlled to tight tolerances. As the process gas flows through the gas supply line, the gas is tightly controlled to a specific temperature and mass flow rate. As the process gas cools, condensate tends to form inside the gas line, which can inhibit the desired flow and chemistry of the process gas. Therefore, heaters have been used along the gas stick to maintain the temperature above a certain level to inhibit such condensation. However, gas sticks of various shapes and sizes are often used along track mounting systems, thus resulting in complex heater configurations and installations. The present utility model addresses these problems associated with track mounted heaters used in gas sticks and other problems associated with process gas systems. Disclosure of utility model This section provides a general summary of the utility model, and is not a comprehensive disclosure of its full scope or all of its features. In one form, the present utility model provides a heater system for semiconductor processing. The heater system includes a base, a plurality of gas treatment components secured to the base, and a heater. The heater is disposed along the length of the susceptor and is positioned between the susceptor and the plurality of gas treatment units. The heater is configured to provide heat to the plurality of gas treatment components. In a variation of the heater system of the preceding paragraph, which may be implemented alone or in any combination, the base is in the form of a rail and the heater is disposed along the length of the rail; the heater is a polyimide heater, the heater extends the entire length of the susceptor, the heater is selected from the group consisting of a layered heater, a cartridge heater, a tubular heater and a cable heater, the heater comprises a continuous heating circuit, the heater comprises a plurality of heating zones, each heating zone corresponding to a respective gas treatment component, the plurality of heating zones are operable independently of each other, the plurality of gas treatment components comprise at least one of a mass flow controller, a regulator, a valve and a pressure sensor, a plurality of interface blocks are secured to the susceptor and disposed between the heater and the corresponding gas treatment component, a process gas is configured to flow through each interface block, the plurality of gas treatment components are secured to the susceptor by mechanical fasteners, the mechanical fasteners extend through the heater, power leads are configured to provide power to the heater, the power leads are connected to an end of the heater or a central region of the heater, the power leads extend parallel or perpendicular to the heater, the power leads comprise a first power lead made of a first electrically conductive material and a second power lead made of a second electrically conductive material different from the first electrically conductive material, the first and second power leads and the first and second power leads are made of a second electrically conductive material different from the first electrically conductive material, the first and second power leads form a junction of electrically insulating material, the thermally and electrically insulating material surrounds the first and second power pins near the thermocouple junction, the first and second power pins are connected to the heater via first and second conductive tabs, respectively, the first and second conductive tabs are flat and flexible, the first conductive tab is made of a first conductive material and the second conductive tab is made of a second conductive material, the first conductive tab is welded to the first power pin and the second conductive tab is welded to the second power pin, and the bottom side of the heater and the first and second conductive tabs are covered with a dielectric material and bonded to the base. Further areas of applicabi