Search

CN-224234141-U - Wafer warp correcting device

CN224234141UCN 224234141 UCN224234141 UCN 224234141UCN-224234141-U

Abstract

The application discloses a wafer warp correcting device, and belongs to the technical field of semiconductors. The wafer warp correcting device comprises a base, a gland and a heating structure, wherein the base comprises a spherical groove and is used for placing a wafer, the edge of the wafer warps towards the direction of the spherical groove, the gland is positioned on one side, close to the spherical groove, of the base, a spherical surface matched with the spherical groove is arranged on one side, close to the base, of the gland, the gland is used for pressing the wafer between the spherical groove and the spherical surface, and the heating structure is positioned in the base at the bottom of the spherical groove and is used for heating the pressed wafer. The embodiment can improve the warping degree of the wafer and improve the yield of the wafer.

Inventors

  • XU CHAOSHENG
  • ZHAO XINGEN
  • ZHANG WENXING

Assignees

  • 江苏卓胜微电子股份有限公司

Dates

Publication Date
20260512
Application Date
20250610

Claims (10)

  1. 1. A wafer warp correction device, comprising: The base comprises a spherical groove and a plurality of grooves, wherein the spherical groove is used for placing a wafer, and the edge of the wafer warps towards the direction of the spherical groove; The pressing cover is positioned on one side, close to the spherical groove, of the base, and is provided with a spherical surface matched with the spherical groove, and the pressing cover is used for pressing the wafer between the spherical groove and the spherical surface; and the heating structure is positioned in the base at the bottom of the spherical groove and is used for heating the pressed wafers.
  2. 2. The wafer warp correction device of claim 1, wherein the heating structure comprises a plurality of heating units distributed along the spherical groove; The distribution density of the heating units is gradually increased in a direction in which the center of the inner surface of the spherical groove faces the edge.
  3. 3. The wafer warp correcting device according to claim 2, wherein each of the heating units extends in a circumferential direction of the spherical groove to form a heating ring structure provided around the spherical groove, or a plurality of the heating units are distributed in a circumferential direction of the spherical groove to form a heating ring structure provided around the spherical groove; The diameters of the plurality of heating ring structures gradually increase in the direction from the bottom to the top of the spherical groove.
  4. 4. The wafer warp correcting device according to claim 1, the wafer warp correcting device is characterized by further comprising: And the cooling structure is positioned in the base at the bottom of the spherical groove and is used for cooling the heated wafer.
  5. 5. The wafer warp correction device of claim 4, wherein the cooling structure comprises a plurality of cooling units evenly distributed along the spherical slot.
  6. 6. The wafer warp correcting device according to claim 5, wherein each of the cooling units extends in a circumferential direction of the spherical groove to form a cooling ring structure provided around the spherical groove, or a plurality of the cooling units are uniformly distributed in a circumferential direction of the spherical groove to form a cooling ring structure provided around the spherical groove; The diameters of the plurality of the cooling ring structures gradually increase in the direction from the bottom to the top of the spherical groove.
  7. 7. The wafer warp correcting device according to claim 1, the wafer warp correcting device is characterized by further comprising: A first release coating covering the inner surface of the spherical groove; and a second anti-sticking coating layer covering the spherical surface of the gland.
  8. 8. The wafer warp correcting device according to claim 1, the wafer warp correcting device is characterized by further comprising: and the pressing block is positioned at one side of the pressing cover, which is away from the base.
  9. 9. The wafer warp correction device according to claim 1, wherein a side of the gland close to the base is further provided with a positioning pin, and the positioning pin is located on the periphery of the spherical surface; One side of the base, which is close to the gland, is provided with a positioning pin hole matched with the positioning pin, and the positioning pin hole is positioned on the periphery of the spherical groove.
  10. 10. The wafer warp correcting device according to any one of claims 1 to 9, wherein the depth of the spherical groove is 1cm to 3cm, and/or, The sphere center angle of the spherical groove is 45-135 degrees.

Description

Wafer warp correcting device Technical Field The application belongs to the technical field of semiconductors, and particularly relates to a wafer warp correcting device. Background After wafer level packaging, CTE (coefficient of thermal expansion) of composite materials such as a substrate, a chip and a packaging layer in a wafer are not matched, structural stress distribution is uneven, and wafer warpage is easily caused. And the overlarge warping degree of the wafer can influence the subsequent automatic transmission and automatic operation, so that the yield of the wafer is affected. Disclosure of utility model The present application aims to solve at least one of the technical problems existing in the prior art. Therefore, the application provides a wafer warp correcting device which can improve the warp of a wafer and increase the yield of the wafer. In a first aspect, the present application provides a wafer warp correction device, comprising: The base comprises a spherical groove and a plurality of grooves, wherein the spherical groove is used for placing a wafer, and the edge of the wafer warps towards the direction of the spherical groove; The pressing cover is positioned on one side, close to the spherical groove, of the base, and is provided with a spherical surface matched with the spherical groove, and the pressing cover is used for pressing the wafer between the spherical groove and the spherical surface; and the heating structure is positioned in the base at the bottom of the spherical groove and is used for heating the pressed wafers. According to the wafer warp correcting device, the spherical groove is arranged in the base, the spherical surface matched with the spherical groove is arranged on one side, close to the base, of the pressing cover, the warped wafer is reversely pressed between the spherical groove and the spherical surface, and the pressed wafer is heated through the heating structure, so that the molecular structures of the front side and the back side of the wafer tend to be consistent, the stress balance is achieved, the warp of the wafer is improved, the influence on subsequent automatic conveying and automatic operation is reduced, and the yield of the wafer is improved. According to one embodiment of the application, the heating structure comprises a plurality of heating units distributed along the spherical groove; The distribution density of the heating units is gradually increased in a direction in which the center of the inner surface of the spherical groove faces the edge. According to one embodiment of the application, each heating unit extends along the circumference of the spherical groove to form a heating annular structure arranged around the spherical groove, or a plurality of heating units are distributed along the circumference of the spherical groove to form a heating annular structure arranged around the spherical groove; The diameters of the plurality of heating ring structures gradually increase in the direction from the bottom to the top of the spherical groove. According to one embodiment of the present application, the wafer warp correcting device further includes: And the cooling structure is positioned in the base at the bottom of the spherical groove and is used for cooling the heated wafer. According to one embodiment of the application, the cooling structure comprises a plurality of cooling units evenly distributed along the spherical groove. According to one embodiment of the application, each cooling unit extends along the circumference of the spherical groove to form a cooling annular structure arranged around the spherical groove, or a plurality of cooling units are uniformly distributed along the circumference of the spherical groove to form a cooling annular structure arranged around the spherical groove; The diameters of the plurality of the cooling ring structures gradually increase in the direction from the bottom to the top of the spherical groove. According to one embodiment of the present application, the wafer warp correcting device further includes: A first release coating covering the inner surface of the spherical groove; and a second anti-sticking coating layer covering the spherical surface of the gland. According to one embodiment of the present application, the wafer warp correcting device further includes: and the pressing block is positioned at one side of the pressing cover, which is away from the base. According to one embodiment of the application, a locating pin is further arranged on one side, close to the base, of the gland, and the locating pin is positioned on the periphery of the spherical surface; One side of the base, which is close to the gland, is provided with a positioning pin hole matched with the positioning pin, and the positioning pin hole is positioned on the periphery of the spherical groove. According to one embodiment of the application, the depth of the spherical groove is 1 cm-3 cm, and/or, The sph