CN-224234183-U - Semiconductor device with a semiconductor device having a plurality of semiconductor chips

Abstract

Various embodiments of the present utility model relate to a semiconductor device including a die, a heat spreader assembly, a base, and a protrusion structure connected to and extending upward from a top surface of the base, the base and the protrusion structure including an anisotropic heat conductive structure including a polymeric material and a heat conductive material, wherein the anisotropic heat conductive structure includes a plurality of first layered portions and a plurality of second layered portions alternately arranged in a horizontal direction parallel to a bottom surface of the heat spreader assembly, the plurality of first layered portions and the plurality of second layered portions extending in a direction perpendicular to the bottom surface of the heat spreader assembly, the plurality of first layered portions being composed of the heat conductive material and the polymeric material, the plurality of second layered portions being composed of the polymeric material, and the plurality of first layered portions being heat conductive portions, the plurality of second layered portions being heat insulating portions.

Inventors

• YANG KAIJIE
• WEN WEIYUAN
• Liao Siya

Assignees

• 台湾积体电路制造股份有限公司

Dates

Publication Date

20260512

Application Date

20250117

Priority Date

20240121

Claims (4)

1. 1. A semiconductor device, comprising: Die, and A heat sink assembly over the die and comprising: A base, and A protruding structure connected to and extending upward from a top surface of the base, the base and the protruding structure comprising an anisotropic heat conductive structure including a polymeric material and a heat conductive material, wherein the anisotropic heat conductive structure includes a plurality of first layered portions and a plurality of second layered portions alternately arranged in a horizontal direction parallel to a bottom surface of the heat dissipation assembly, the plurality of first layered portions and the plurality of second layered portions extending in a direction perpendicular to the bottom surface of the heat dissipation assembly, the plurality of first layered portions being composed of the heat conductive material and the polymeric material, the plurality of second layered portions being composed of the polymeric material, and the plurality of first layered portions being heat conductive portions, the plurality of second layered portions being heat insulating portions.
2. 2. The semiconductor device of claim 1, wherein the plurality of protruding structures extend in different directions.
3. 3. The semiconductor device of claim 2, further comprising an external component, wherein the heat spreading component is disposed between the external component and the die, and the external component has a curved surface in direct contact with the plurality of protruding structures.
4. 4. The semiconductor device of claim 1, wherein the plurality of protruding structures comprises sidewalls perpendicular to the top surface of the base.

Description

Semiconductor device with a semiconductor device having a plurality of semiconductor chips Technical Field Embodiments of the present utility model relate to a heat dissipating assembly having anisotropic heat conduction and a semiconductor device. Background With the advancement of technology, the integration level of integrated circuits is continuously improved, resulting in dense distribution of internal circuits of the integrated circuits. However, the increase in integration also presents heat dissipation challenges. Insufficient heat dissipation may lead to failure or even permanent damage of the semiconductor element. To solve these problems, the use of heat sinks has become a common practice to significantly improve the heat dissipation efficiency of integrated circuits. Disclosure of utility model According to some embodiments, the heat dissipating component comprises an anisotropically thermally conductive material. The anisotropic thermally conductive material includes a polymeric material and a thermally conductive material. The first portion of polymeric material is bonded to the thermally conductive material and forms a thermally conductive portion. The second portion of polymeric material is not bonded to the thermally conductive material and forms a thermally insulating portion. The heat conductive portions and the heat insulating portions are alternately arranged. According to some embodiments, a semiconductor device includes a die and a heat spreader assembly. The heat spreader assembly is disposed over the die. The heat dissipation assembly includes an anisotropic heat conductive material including first and second layered portions alternately arranged. The thermal conductivity of the first layered part is higher than the thermal conductivity of the second layered part. Drawings The aspects of the disclosure are best understood from the following detailed description when read with the accompanying drawing figures. It should be noted that the various features are not drawn to scale in accordance with standard practices in the industry. In fact, the dimensions of the various features may be arbitrarily increased or reduced for clarity of discussion. Fig. 1 is a flow chart of a method of manufacturing a heat dissipating assembly according to an embodiment of the present disclosure. Fig. 2A to 2B are cross-sectional views illustrating various stages of a method of manufacturing a dry film according to an embodiment of the present disclosure. Fig. 2C is a schematic diagram of the microstructure/nanostructure of a dry film according to an embodiment of the present disclosure. Fig. 3A is a schematic diagram of a polymeric material according to an embodiment of the present disclosure. Fig. 3B is a schematic diagram of a polymeric material according to an embodiment of the present disclosure. Fig. 4A to 4B are cross-sectional views illustrating various stages of a manufacturing method of a dry film according to an embodiment of the present disclosure. Fig. 4C is a schematic diagram of the microstructure/nanostructure of a dry film according to an embodiment of the disclosure. Fig. 5A is a schematic diagram of a copolymer of a polymeric material according to an embodiment of the present disclosure. Fig. 5B is a schematic diagram of a copolymer of a polymeric material according to an embodiment of the present disclosure. Fig. 5C is a schematic diagram of a copolymer of a polymeric material according to an embodiment of the present disclosure. Fig. 6A is a schematic diagram of a self-assembled composite material according to an embodiment of the present disclosure. Fig. 6B is a schematic diagram of a self-assembled composite material according to an embodiment of the present disclosure. Fig. 6C is a schematic diagram of a self-assembled composite according to an embodiment of the present disclosure. Fig. 7A to 7B are cross-sectional views illustrating various stages of a manufacturing method of a dry film according to an embodiment of the present disclosure. Fig. 7C is a schematic diagram of a microstructure/nanostructure of a dry film according to an embodiment of the disclosure. Fig. 8A to 8C are sectional views illustrating various stages of a method of manufacturing a heat sink assembly according to an embodiment of the present disclosure. Fig. 9 is a cross-sectional view illustrating a semiconductor device according to an embodiment of the present disclosure. Fig. 10 is a cross-sectional view illustrating a semiconductor device according to an embodiment of the present disclosure. Fig. 11 is a cross-sectional view illustrating a semiconductor device according to an embodiment of the present disclosure. Fig. 12 is a cross-sectional view illustrating a heat dissipating assembly according to an embodiment of the present disclosure. Fig. 13A to 13D are sectional views illustrating various stages of a method of manufacturing a heat sink assembly according to an embodiment of the present disclosure.