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DE-102024003699-A1 - Processing of substrate semiconductor wafers

DE102024003699A1DE 102024003699 A1DE102024003699 A1DE 102024003699A1DE-102024003699-A1

Abstract

The invention relates to methods for processing a substrate semiconductor disk (1) on a processing device, wherein each of the two disk sides (1.1, 1.2) of the substrate semiconductor disk (1) is ground in a processing sequence assigned to each disk side via an assigned grinding device, while it is placed on an assigned storage surface of a storage device. At least one of the two storage surfaces (101.1, 102.1) of the two storage devices (101, 102) is designed as a curved surface which, viewed along an associated radial axis through the associated storage device (101, 102), defines an associated storage device contour, wherein a projected contour diameter, viewed along the associated radial axis, is assigned to this contour diameter, which has a value in the range of 300 mm to 320 mm, and wherein the curvature of the curve is at least sectionally, preferably predominantly, and more preferably over the entire storage surface, in a range of 7.81 × 10⁻⁵ m⁻¹ to 5.33 × 10⁻³ m⁻¹ , preferably in the range of 3.12 × 10⁻⁴ m⁻¹ to 2.67 × 10⁻³ m⁻¹ , and more preferably in the range of 5.47 × 10⁻⁴ m⁻¹ up to 1.33× 10⁻³ m⁻¹ . The invention further relates to a substrate semiconductor disk with a nominal diameter of essentially 300 mm, wherein the substrate semiconductor disk (1) has a global grinding target geometry with at least one section having a warp value in the range of 1 µm to 60 µm, preferably in a range of 4 µm to 30 µm, more preferably in a range of 7 µm to 15 µm.

Inventors

  • Anton Huber

Assignees

  • SILTRONIC AG

Dates

Publication Date
20260513
Application Date
20241112

Claims (12)

  1. A method for processing a substrate semiconductor wafer (1) on a processing device, comprising: • at least the following steps of a coating sequence: - applying a film to a coating surface of a coating device and applying a curable layer thereon, - placing the substrate semiconductor wafer (1) onto the curable layer, wherein a first wafer side (1.1) of the substrate semiconductor wafer (1) faces the curable layer, - curing the curable layer, - removing the substrate semiconductor wafer including the curable layer and film from the coating device, • at least the following steps of a first processing sequence: - placing the substrate semiconductor wafer (1) onto a first depositing surface (101.1) of a first depositing device (101), wherein the first wafer side (1.1) faces the first depositing surface (101.1), - building up suction pressure in the first depositing device (101) via a first suction unit, - suctioning the curable layer, and in particular the substrate semiconductor wafer (1), to the first storage surface (101), - grinding a second (1.2) side of the substrate semiconductor disk (1), opposite the first (1.1) side, over a first grinding head (103.1) of a first grinding device (103), - removal of the substrate semiconductor disk including the curable layer and film from the first storage surface (101.1), - peeling the curable layer from the substrate semiconductor disk (1), and • at least the following steps of a second processing sequence: - placing the substrate semiconductor disk (1) onto a second storage surface (102.1) of a second storage device (102), wherein the second disk side (1.2) faces the second storage surface (102.1), - building up suction pressure in the second storage device (102) via a second suction unit, - suction of the substrate semiconductor disk (1) onto the second storage surface (102.1), - grinding of the first disk side (1.1) over a second grinding head (104.1) of a second grinding device (104), - removal of the substrate semiconductor disk (1) from the second depositing surface, characterized in that - at least one of the first (101.1) and second (102.1) depositing surfaces is designed as a curved surface which, viewed along an associated radial axis through the associated depositing device (101, 102), defines an associated depositing device contour, wherein a projected contour diameter, viewed along the associated radial axis, is associated with this contour diameter, which has a value in the range of 300 mm to 320 mm, and wherein the curvature value is at least sectionally, preferably predominantly, and more preferably over the entire depositing surface, in a range of 7.81× 10⁻⁵ m⁻¹ to 5.33× 10⁻³ m⁻¹ , preferably in the range of 3.12× 10⁻⁴ m⁻¹ to 2.67× 10⁻³ m⁻¹. -1 , further preferably in the range of 5.47×10 -4 m -1 to 1.33×10 -3 m -1 .
  2. Procedure according to Claim 1 , wherein the second processing sequence is immediately preceded by a further coating sequence in which a further curable layer and a further film are applied to the second deposit surface (102.1), resulting in the following steps after completion of the first processing sequence: • at least the following steps of the further coating sequence: - applying a further film to a further coating surface of a further coating device and applying a further curable layer thereon, - placing the substrate semiconductor wafer (1) onto the further curable layer, wherein the first wafer side (1.1) of the substrate semiconductor wafer (1) faces the further curable layer, - curing the further curable layer, - removing the substrate semiconductor wafer including the further curable layer and further film from the further coating device, and • at least the following steps of the second processing sequence: - placing the substrate semiconductor wafer (1) onto the second deposit surface (102.1) of the second deposit device (102), wherein the second wafer side (1.2) of the second facing the second storage surface (102.1), - building up suction pressure in the second storage device (102) via the second suction unit, - suction of the substrate semiconductor disk (1) to the second storage surface (102.1), - grinding of the first disk side (1.1) over the second grinding head (104.1) of the second grinding device (104), - removal of the substrate semiconductor disk (1) from the second storage surface, - detachment of the further curable layer from the substrate semiconductor disk (1).
  3. Procedure according to Claim 1 or 2 , wherein - as a first storage device (101) a storage device is chosen whose first storage surface (101.1), viewed along a first radial axis through the first storage device (101), a first storage device contour is defined, wherein the course of the value of the curvature within at least one concave and/or within at least one convex curved section lies in the range of 7.81×10 -5 m -1 to 5.33×10 -3 m -1 , preferably in the range of 3.12×10 -4 m -1 to 2.67×10 -3 m -1 , further preferably in the range of 5.47×10 -4 m -1 to 1.33×10 -3 m -1 .
  4. Procedure according to one of the Claims 1 until 3 , wherein - as a second storage device (102) a storage device is selected, the second storage surface (102.1) of which, viewed along a second radial axis through the second storage device (102), defines a second storage device contour, wherein the course of the value of the curvature within at least one concave and/or within at least one convex curved section lies in the range of 7.81×10 -5 m -1 to 5.33×10 -3 m -1 , preferably in the range of 3.12×10 -4 m -1 to 2.67×10 -3 m -1 , further preferably in the range of 5.47×10 -4 m -1 to 1.33×10 -3 m -1 .
  5. Method according to one of the preceding claims, wherein - one of the two storage devices is selected having a storage surface (101.1) that is at least partially concave and/or convex, - and the other of the two storage devices is selected having a substantially planar surface.
  6. Method according to one of the preceding claims, wherein for the grinding step during the first and/or second processing sequence a detachably mountable grinding head (105.1) is selected as part of the associated grinding device (103, 104), which is designed as a flat grinding wheel or cup wheel, wherein during the grinding step the feed axis of the first and/or the second grinding head (105.1) is inclined relative to a rotation axis of the associated storage device via a feed angle and this feed angle is varied during the grinding step to process the facing side of the substrate semiconductor disk.
  7. Substrate semiconductor wafer with a nominal diameter of substantially 300 mm, wherein the substrate semiconductor wafer (1) has a global grinding target geometry with at least one section having a warp value in the range of 1 µm to 60 µm, preferably in a range of 4 µm to 30 µm, more preferably in a range of 7 µm to 15 µm, and wherein the nanotopography values on each of the two wafer sides, in particular measured and filtered by double Gaussian filtration in a round, local window with a diameter of 25 mm according to SEMI M78-0923 - Guide for determining nanotopography of unpatterned silicon wafers high volume manufacturing - 2010/2023, do not exceed a value of 15 nm, preferably 10 nm, at each position of the wafer sides of the substrate semiconductor wafer.
  8. substrate semiconductor disk according to Claim 7 , wherein the first side of the disk is at least sectionally concave and/or at least sectionally convex.
  9. substrate semiconductor disk according to Claim 7 or 8 , wherein the second side of the disk is at least sectionally concave and/or at least sectionally convex.
  10. Method for producing a semiconductor wafer (10) comprising a substrate semiconductor wafer (1) with at least one epitaxial layer (3), wherein - starting from the processing method according to one of the preceding Claims 1 until 6 After removal of the substrate semiconductor wafer (1) from the processing device after completion of the second processing sequence, the substrate semiconductor wafer (1) has a global grinding target geometry with at least one section having a warp value in the range of 1 µm to 60 µm, preferably in a range of 4 µm to 30 µm, more preferably in a range of 7 µm to 15 µm, - following removal, at least one etching step of the substrate semiconductor wafer (1) is performed, - and then at least one polishing step on the first (1.1) and/or the second (1.2) side of the wafer is performed on a polishing device, wherein during the at least one polishing step the substrate semiconductor wafer (1) on the first (1.1) and/or the second (1.2) side of the wafer is selectively polished by the polishing device with a local polishing removal on the substrate semiconductor wafer (1) on the respective side of the wafer, - and then, in particular, a cleaning step of the substrate semiconductor wafer (1) is performed. is carried out, - and then a layer is deposited on at least one disk side (1.1, 1.2) of the substrate semiconductor disk (1), wherein ◯ at least one epitaxial layer (3) is deposited within an epitaxial device on one of the two disk sides of the substrate semiconductor disk (1), wherein the at least one epitaxial layer (3) comprises in particular GaN and/or silicon, ◯ and prior to this, in particular, a low thermal oxide layer (2) is applied on the other disk side of the substrate semiconductor disk (1).
  11. Procedure according to Claim 10 , wherein the at least one epitaxial layer (3) is locally applied to the substrate semiconductor disk (1) such that a predefinable target thickness of the fabricated semiconductor disk (10) in the range of 600 µm to 1000 µm is achieved and/or the fabricated semiconductor disk (10) has a warp value of less than 4 µm.
  12. Machining device for machining a substrate semiconductor disk (1) according to one of the Claims 1 until 6 The device is designed comprising: - at least one grinding head (103.1, 104.1) on an associated grinding device (103, 104); - at least one coating device with an associated coating surface; - a first storage device (101) with a first storage surface (101.1) and a first suction unit; - a second storage device (102) with a second storage surface (102.1) and a second suction unit; characterized in that: - at least one storage surface (101.1) and one storage surface (102.1) are formed as a curved surface, wherein, viewed along an associated radial axis through the associated storage device (101, 102), an associated storage device contour is defined, wherein a projected contour diameter, viewed along the associated radial axis, is assigned to this contour diameter, which has a value in the range of 300 mm to 320 mm; and wherein the curvature value of this contour is at least section by section, preferably predominantly, further preferably over the entire storage surface, in a range of 7.81×10 -5 m -1 to 5.33×10 -3 m -1 , preferably in the range of 3.12×10 -4 m -1 to 2.67×10 -3 m -1 , further preferably in the range of 5.47×10 -4 m -1 to 1.33×10 -3 m -1 .

Description

Technical field The invention relates to a method for processing a substrate semiconductor disk on a processing device using a grinding device, as well as the substrate semiconductor disk produced or processed thereby, and, starting from the processed substrate semiconductor disk, a method for producing a semiconductor disk with at least one epitaxial layer. State of the art and technical task Depending on the type and geometric shape of the coating and the substrate semiconductor wafer, coatings on semiconductor wafers can cause uncontrolled curvature of the global semiconductor wafer geometry, which is undesirable for further processing of the semiconductor wafer. To reduce this problem, state-of-the-art methods include (i) single-side grinding for the targeted adjustment of a "global" warp (warp value) of a substrate semiconductor wafer, as for example in EP0580162A1 described, known, such that the curvature direction of which is to be counteracted by subsequent coating steps in order to finally obtain, for example, an ideally plan-parallel epi-coated semiconductor disk, or (ii) grinding methods on a substrate semiconductor disk in a so-called Resiflat device using a resin layer on the side of the substrate semiconductor disk facing away from the grinding device, which are intended to improve the local curvature (nanotopography) on the processed substrate semiconductor disk. However, the methods known from the prior art have the disadvantage that they either only capture the nanotopography (normalized in SEMI M78-0923 “Guide for determining nanotopography of unpatterned silicon wafers high volume manufacturing” 2010 / 2023 ) influencing and improving the performance of a semiconductor disk or substrate semiconductor disk, or merely the "global" curvature (in the sense of warp as defined in " ASTM F657 - 92(1999) Standard Test Method for Measuring Warp and Total Thickness Variation on Silicon Wafers by Noncontact Scanning” and “ ASTM F1390 - 02 Standard Test Method for Measuring Warp on Silicon Wafers by Automated Noncontact Scanning “) influencing and improving a semiconductor disk or substrate semiconductor disk. The present invention is therefore based on the objective, technical problem of providing a processing method for substrate semiconductor wafers, substrate semiconductor wafers and, based on this, a manufacturing method for semiconductor wafers comprising a processed substrate semiconductor wafer and at least one epitaxial layer deposited thereon, which exhibits the aforementioned disadvantages to a lesser degree and which, in particular, produces in a simple manner a semiconductor wafer (i.e., a substrate semiconductor wafer with at least one epitaxial layer) with substantially plane-parallel sides of the semiconductor wafer and simultaneously exhibits low nanotopography (local curvature) at least on the uncoated side of the semiconductor wafer (i.e., uncoated side of the substrate semiconductor wafer), and in particular an improved nanotopography compared to a substrate semiconductor wafer or semiconductor wafer processed according to the prior art method to (i). The problem is solved by a processing method of a substrate semiconductor disk according to claim 1, by the substrate semiconductor disk according to claim 7, by a manufacturing method of a semiconductor disk comprising a substrate semiconductor disk and at least one layer according to claim 10, and by a processing device according to claim 12. Description of the invention According to a first aspect, the invention therefore relates to a method for processing a substrate semiconductor disk on a processing device, comprising • at least the following steps in a coating sequence: - Applying a film to a coating surface of a coating device and then applying a curable layer to it, - Placing the substrate semiconductor disk onto the curable layer, wherein a first disk side of the substrate semiconductor disk faces the curable layer, - Curing of the curable layer, especially by means of UV irradiation, - Removal of the substrate semiconductor disk including curable layer and film from the coating device, • at least the following steps of an initial processing sequence: - Placing the substrate semiconductor disk onto a first placement surface of a first abla device, wherein the first disc side faces the first storage surface, - Building up intake pressure in the first storage device via a first intake unit, - Suction of the curable layer, and in particular the substrate semiconductor disk, to the first depositing surface, - Grinding a second side of the substrate semiconductor disk, the side facing away from the first side, over a first grinding head of a first grinding device, - Removal of the substrate semiconductor wafer including curable layer and film from the first deposit surface, - Detachment of the curable layer from the substrate semiconductor disk, in particular by clamping the film and mechanical peeling, and • at least the follow