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DE-102024133190-A1 - Semiconductor component and method for manufacturing a semiconductor component

DE102024133190A1DE 102024133190 A1DE102024133190 A1DE 102024133190A1DE-102024133190-A1

Abstract

A semiconductor device (1) is specified, comprising: - a semiconductor chip (2), - at least one functional layer (3) which has a physical function and is arranged on a surface (2A, 2B) of the semiconductor chip (2), - a distribution of functional particles (4) which have a material corresponding to the functional layer (3) and/or a physical function corresponding to the functional layer (3), wherein the distribution of the functional particles (4) is located at least partially in an area of the semiconductor device (1) that does not laterally overlap with the functional layer (3). Furthermore, a method for manufacturing a semiconductor device (1) is specified.

Inventors

  • Thomas Schwarz
  • Michael Zitzlsperger

Assignees

  • AMS-OSRAM INTERNATIONAL GMBH

Dates

Publication Date
20260513
Application Date
20241113

Claims (15)

  1. Semiconductor device (1) comprising - a semiconductor chip (2), - at least one functional layer (3) having a physical function and arranged on a surface (2A, 2B) of the semiconductor chip (2), - a distribution of functional particles (4) having a material corresponding to the functional layer (3) and/or a physical function corresponding to the functional layer (3), wherein the distribution of the functional particles (4) is located at least partially in a region of the semiconductor device (1) that does not laterally overlap with the functional layer (3).
  2. Semiconductor device (1) according to the preceding claim, wherein the functional particles (4) have a mean diameter (d) of at most 25 µm.
  3. Semiconductor device (1) according to one of the preceding claims, wherein the functional particles (4) are arranged in a monolayer.
  4. Semiconductor device (1) according to one of the preceding claims, wherein at least a part of the functional particles (4) are separated from each other by spaces (s).
  5. Semiconductor device (1) according to one of the preceding claims, wherein the at least one functional layer (3) is a conversion layer (30) arranged on a radiation exit side (2A) of the semiconductor chip (2).
  6. Semiconductor device (1) according to the preceding claim, wherein at least part of the functional particles (4) are conversion particles (40), and the conversion particles (40) are partially arranged on the conversion layer (30), wherein a distribution of the conversion particles (40) extends laterally beyond the conversion layer (30).
  7. Semiconductor device (1) according to one of the preceding claims, wherein the at least one functional layer (3) is an electrical contact layer (31) arranged on a mounting side (2B) of the semiconductor chip (2).
  8. Semiconductor device (1) according to the preceding claim, wherein at least part of the functional particles (4) are electrically conductive particles (41) and the electrically conductive particles (41) are arranged only in a region of the semiconductor device (1) which does not laterally overlap with the functional layer (3).
  9. Semiconductor device (1) according to one of the two preceding claims, comprising a carrier element (5) on which the semiconductor chip (2) is arranged, wherein the semiconductor chip (2) is electrically connected to the carrier element (5) by means of the functional layer (3).
  10. Semiconductor device (1) according to one of the preceding claims, wherein the semiconductor device (1) is a micro-component.
  11. A method for manufacturing a semiconductor device (1) according to any one of the preceding claims, wherein the method comprises: - providing a target substrate (100) comprising at least one component of the semiconductor device (1), - providing a source substrate (90) at a distance from the target substrate (100), wherein the source substrate (90) comprises a support layer (91) and functional particles (4), and the functional particles (4) adhere to the support layer (91), - applying at least a defined quantity of functional particles (4) to the target substrate (100), wherein the source substrate (90) is exposed to radiation (R) in a defined area (B), causing the release of the functional particles, and the released functional particles are moved to the target substrate.
  12. A method according to the preceding claim, wherein the method comprises: - providing a target substrate (100) comprising a support element (5), - applying the defined quantity of functional particles (4) to the support element (5), - arranging a semiconductor chip (2) on the support element (5) in such a way that functional particles (4) are located between the support element (5) and the semiconductor chip (2), and - forming an electrical contact layer (31) between the semiconductor chip (2) and the support element (5) by melting functional particles (4) located between the semiconductor chip (2) and the support element (5).
  13. A method according to one of the two preceding claims, wherein the method comprises: - Providing a target substrate (100) comprising a semiconductor chip (2) with a conversion layer (30), - Applying the defined quantity of functional particles (4) to the conversion layer (30) in such a way that the functional particles (4) are partially arranged on the conversion layer (30) and a distribution of the conversion particles (40) extends laterally beyond the conversion layer (30), wherein the functional particles (4) are conversion particles (40).
  14. Method according to the preceding claim, wherein the radiation (R) is provided for the release of the functional particles (4) through the semiconductor chip (2).
  15. Procedure according to one of the Claims 11 until 13 , wherein the radiation (R) is provided by means of an LDI system (LDI: Laser Direct Imaging).

Description

A semiconductor device with a semiconductor chip and a method for manufacturing a semiconductor device are described. For example, the semiconductor chip is suitable for emitting electromagnetic radiation with a peak wavelength in the ultraviolet to infrared, for example, visible, spectral range. The peak wavelength can denote the maximum of the spectral distribution of the emitted radiation. Furthermore, the semiconductor device can be designed to emit radiation with different color components, such as white light. However, it is also possible that the semiconductor chip or semiconductor device is suitable for detecting electromagnetic radiation. Additionally, it is possible that the semiconductor chip is designed as an integrated electronic circuit. For example, the semiconductor chip or semiconductor device is a micro-component characterized by a comparatively small size with dimensions in the micrometer range. For the fabrication of functional layers in semiconductor devices, such as electrical contact layers or conversion layers, which can convert at least a portion of radiation into radiation of a different wavelength, manufacturing processes like ultra-precise dispensing (UP), which uses a thin cannula to dispense pastes, or paste deposition using a doctor blade, are conceivable. These methods allow for the deposition of defined, small amounts or volumes of material and are therefore suitable for the production of microcomponents. However, these processes are either slow and therefore expensive, or not yet industrialized. With other methods, such as impulse printing, in which the paste is removed by means of a heat pulse from an electrical heating resistor, or laser ablation of the paste, the deposition of defined, small amounts or volumes of material is not readily possible. One problem to be solved is to specify a semiconductor device, for example a micro-semiconductor device, with improved physical properties. Another problem to be solved is to specify a method for manufacturing a semiconductor device, for example a micro-semiconductor device, with improved physical properties. These tasks are solved, among other things, by a semiconductor device and a method with the features of the independent claims. According to at least one embodiment of a semiconductor device, this device comprises a semiconductor chip. The semiconductor chip can be an optoelectronic semiconductor chip, for example, a radiation-emitting or radiation-detecting semiconductor chip. The radiation-emitting semiconductor chip can have an active zone suitable for generating radiation. The active zone can be designed to emit electromagnetic radiation with a peak wavelength in the ultraviolet to infrared, for example, visible, spectral range during operation. Correspondingly, the radiation-detecting semiconductor chip can have an active zone suitable for absorbing radiation in the aforementioned spectral range. Furthermore, the semiconductor chip may be a switching element that incorporates an integrated electronic circuit. The semiconductor chip can have a sequence of semiconductor layers with a first and second semiconductor region of different conductivity. The active zone can optionally be located between the first and second semiconductor regions. The first and second semiconductor regions, as well as the active zone, can each consist of one or more semiconductor layers. The semiconductor layers can be epitaxially deposited onto a growth substrate. The growth substrate can remain in the semiconductor chip or be at least partially detached. For example, the first semiconductor region might have n-type conductivity, while the second semiconductor region has p-type conductivity. However, it is also possible for the first semiconductor region to have p-type conductivity and the second semiconductor region to have n-type conductivity. For the semiconductor regions or semiconductor layers of the semiconductor layer sequence , materials based on arsenide, phosphide, or nitride compound semiconductors are suitable, for example. "Based on arsenide, phosphide, or nitride compound semiconductors" in this context means that the semiconductor layers contain AlnGamIn 1nmAs,AlnGamIn1nmP,orAlnGamIn1nmN , where 0 ≤ n ≤ 1, 0 ≤ m ≤ 1, and n+m ≤ 1. This material does not necessarily have to have a mathematically exact composition according to the formula above. Rather, it may contain one or more dopants as well as additional components that do not substantially alter the characteristic physical properties of the Al n Ga m In 1-nm As-, Al n Ga m In 1-nm P- or Al n Ga m In 1-nm N-material. For the sake of simplicity However, the formula above only includes the essential components of the crystal lattice (Al, Ga, In, As, P, and N, respectively), even though some of these may be replaced by small amounts of other substances. Furthermore, silicon, for example, is also a possible material for a semiconductor chip, such as a detector or an integrated circ