DE-102025125384-B3 - Electronic device, power module and manufacturing process for a power module
Abstract
A fabrication method for a power module (S100) comprises a die-bonding step (S110) in which a power chip (2) is attached to an inner metal layer (12) of a substrate (1), the substrate (1) comprising an outer metal layer (13) located on the side opposite the inner metal layer (12), the outer metal layer (13) of the substrate (1) being not electrically coupled to the power chip (2). The fabrication method further comprises an encapsulation step (S130) in which the substrate (1) and the power chip (2) are encapsulated in an encapsulation body (4) such that a layout plane (131) of the outer metal layer (13) of the substrate (1) is exposed on the encapsulation body (4) and is coplanar with an adjacent surface of the encapsulation body (4). Ultimately, the manufacturing process comprises a patterning step (S150) in which several deformation sections (512) of multiple heat-conducting pieces (51) are directly attached to the layout plane (131), each deformation section (512) being connected upwards to a structuring section (511) of the heat-conducting piece (51), the area of a first cross-section of the underside of the deformation section (512) being larger than the area of a second cross-section of the structuring section (511). After completion of the patterning step (S150), the multiple structuring sections (511) are arranged at a distance from and adjacent to each other to jointly form a predetermined pattern. Furthermore, the multiple heat-conducting pieces (51) and the layout plane (131) jointly enclose and define a heat-conducting channel (C) through which a heat-conducting medium can flow.
Inventors
- Chung-Ming Leng
- Chih-Cheng Hsieh
- Wei-Lun Wang
Assignees
- NIKO SEMICONDUCTOR CO., LTD
Dates
- Publication Date
- 20260513
- Application Date
- 20250630
- Priority Date
- 20250515
Claims (9)
- A manufacturing process for a power module (S100) comprising: - a die-bonding step (S110) in which a power chip (2) is attached to an inner metal layer (12) of a substrate (1), the substrate (1) comprising an outer metal layer (13) located on the side opposite the inner metal layer (12), the outer metal layer (13) of the substrate (1) not being electrically coupled to the power chip (2); - an encapsulation step (S130) in which the substrate (1) and the power chip (2) are encapsulated in an encapsulation body (4) such that a layout plane (131) of the outer metal layer (13) of the substrate (1) is exposed on the encapsulation body (4) and is coplanar with an adjacent surface of the encapsulation body (4); and - a patterning step (S150) in which several deformation sections (512) of several heat-conducting pieces (51) are directly attached to the layout plane (131), each of the deformation sections (512) being connected upwards to a structuring section (511) of the heat-conducting piece (51), wherein the area of a first cross-section of the underside of the deformation section (512) is larger than the area of a second cross-section of the structuring section (511); in that after the patterning step (S150) has been carried out, the several structuring sections (511) are arranged at a distance from and adjacent to each other to jointly form a predetermined pattern; in that the several heat-conducting pieces (51) and the layout plane (131) jointly enclose and define a heat-conducting channel (C) through which a heat-conducting medium can flow.
- Manufacturing process for a power module (S100) according to Claim 1 , wherein the manufacturing process for a power module (S100) further comprises a reinforcement step (S120) after the die bonding step (S110) and before the encapsulation step (S130), in which several support columns (7) are connected at one end to the substrate (1) and at the other end to a carrier (6), such that the power chip (2) is located between the carrier (6) and the substrate (1); wherein in the encapsulation step (S130) the carrier (6) and the several support columns (7) are embedded in the encapsulation body (4); wherein in the patterning step (S150) the carrier (6) absorbs an external force through the several support columns (7) exerted on the substrate (1) by directly attaching each of the heat conductors (51) to the layout plane (131).
- Power module (100), comprising: - a substrate (1) comprising a plate (11), an inner metal layer (12) formed on one side of the plate (11) and an outer metal layer (13) formed on the other side of the plate (11); - a power chip (2) attached to the inner metal layer (12) of the substrate (1) and not electrically coupled to the outer metal layer (13), wherein the outer metal layer (13) has a layout plane (131) facing away from the power chip (2); - an encapsulation body (4) encapsulating the substrate (1) and the power chip (2), wherein the layout plane (131) of the outer metal layer (13) is exposed on the encapsulation body (4) and is coplanar with an adjacent surface of the encapsulation body (4); and - a patterned thermal interface layer (5) comprising several thermal interface pieces (51) directly attached to the layout plane (131), each of which has: - a structuring section (511), wherein the structuring sections (511) of the several thermal interface pieces (51) are spaced apart and adjacent to each other to jointly form a predetermined pattern; and - a deformation section (512) which is connected upwards to the structuring section (511) and directly to the layout plane (131) at its bottom, wherein the area of a first cross-section of the bottom of the deformation section (512) is larger than the area of a second cross-section of the structuring section (511); wherein the multiple heat-conducting pieces (51) and the layout plane (131) together enclose and define a heat-conducting channel (C) through which a heat-conducting medium can flow.
- Power module (100) according to Claim 3 , wherein each of the heat conductors (51) has an elongated column shape and the multiple heat conductors (51) are arranged parallel to each other.
- Power module (100) according to Claim 3 or 4 , wherein in at least two of the heat conducting pieces (51) the two structuring sections (511) each comprise a C-shaped side surface (513), wherein the C-shaped side surfaces (513) of the two structuring sections (511) are arranged offset, such that a part of one C-shaped side surface (513) lies within the space enclosed by the other C-shaped side surface (513) to jointly create an S-shaped space.
- Power module according to one of the Claims 3 until 5 , wherein the layout plane (131) comprises several spaced-apart subplanes (1311), wherein the several heat-conducting pieces (51) are directly attached to the several subplanes (1311) of the layout plane (131).
- Power module according to one of the Claims 3 until 6 , wherein the power module (100) further comprises: - a carrier (6) embedded in the encapsulation body (4), wherein the power chip (2) is located between the carrier (6) and the substrate (1); and - several support columns (7) arranged between and connected to the substrate (1) and the carrier (6) and embedded in the encapsulation body (4).
- Power module (100) according to one of the Claims 3 until 7 , wherein the power module (100) further comprises several terminals (3) which are attached to the inner metal layer (12) and electrically coupled to the power chip (2), each of the terminals (3) partially protruding from the encapsulation body (4).
- Electronic device comprising: - a power module (100) comprising: - a substrate (1) comprising a plate (11), an inner metal layer (12) formed on one side of the plate (11), and an outer metal layer (13) formed on the other side of the plate (11); - a power chip (2) attached to the inner metal layer (12) of the substrate (1) and not electrically coupled to the outer metal layer (13), the outer metal layer (13) having a layout plane (131) facing away from the power chip (2); - an encapsulation body (4) encapsulating the substrate (1) and the power chip (2), the layout plane (131) of the outer metal layer (13) being exposed on the encapsulation body (4) and being coplanar with an adjacent surface of the encapsulation body (4); and - a patterned thermal conductivity layer (5) comprising several thermal conductivity pieces (51) attached directly to the layout plane (131), each of which has: - a structuring section (511) wherein the structuring sections (511) of the several thermal conductivity pieces (51) are spaced apart from and adjacent to each other to jointly form a predetermined pattern; and - a deformation section (512) connected upwards to the structuring section (511) and directly to the layout plane (131) at its bottom, wherein the area of a first cross-section of the bottom of the deformation section (512) is larger than the area of a second cross-section of the structuring section (511); and - a liquid cooling module (200) attached to the power module (100) and comprising a coolant flow channel (201) within which the patterned thermal conductivity layer (5) of the power module (100) is located; - wherein the multiple heat conductors (51) and the layout plane (131) together form a heat conductor nal (C) enclose and define through which a thermal conducting medium can flow.
Description
The present invention relates to a power module, in particular an electronic device, a power module and a manufacturing method for a power module, in which a patterned thermal conductivity layer is provided. The demands on the heat dissipation of existing power modules are constantly increasing, so most existing power modules are connected to an external cooling module via a medium (e.g., tin paste or insulating thermal paste) to increase their heat dissipation performance. However, to date, there are no power modules whose heat dissipation performance has been increased through improvements to their own structure. The DE 10 2014 105 727 A1 This concerns semiconductor modules and in particular directly cooled substrates for semiconductor modules and methods for manufacturing such substrates and modules. The DE 10 2011 089 886 A1 relates to a circuit carrier and a method for manufacturing the said circuit carrier as well as a circuit arrangement with the said circuit carrier. In a first aspect, the present invention provides a manufacturing method for a power module according to independent claim 1. In a second aspect, the present invention provides a power module according to independent claim 3. In a third aspect, the present invention provides an electrical device according to independent claim 9. Further embodiments of the respective aspects are described in the dependent claims. The embodiments of the present invention disclose a manufacturing method for a power module comprising: a die-bonding step in which a power chip is attached to an inner metal layer of a substrate, the substrate comprising an outer metal layer located on the side opposite the inner metal layer, the outer metal layer of the substrate not being electrically coupled to the power chip; an encapsulation step in which the substrate and the power chip are encapsulated in an encapsulation body such that a layout plane of the outer metal layer of the substrate is exposed on the encapsulation body and is coplanar with an adjacent surface of the encapsulation body; and a patterning step in which several deformation sections of several heat conductors are attached directly to the layout plane, each of the deformation sections being connected upwards to a structuring section of the heat conductor, the area of a first cross-section of the bottom of the deformation section being larger than the area of a second cross-section of the structuring section. After the patterning step has been carried out, the several structuring sections are arranged at a distance from each other and adjacent to each other in order to jointly form a predetermined pattern. The embodiments of the present invention also disclose a power module comprising: a substrate comprising a plate, an inner metal layer formed on one side of the plate, and an outer metal layer formed on the other side of the plate; a power chip attached to the inner metal layer of the substrate and not electrically coupled to the outer metal layer, the outer metal layer having a layout plane facing away from the power chip; an encapsulation body encapsulating the substrate and the power chip, the layout plane of the outer metal layer being exposed on the encapsulation body and being coplanar with an adjacent surface of the encapsulation body; and a patterned thermal interface material comprising several thermal interface pieces attached directly to the layout plane, each of which has: a structuring section, the structuring sections of the several thermal interface pieces being spaced apart from and adjacent to one another to jointly form a predetermined pattern; and a deformation section that is connected upwards to the structuring section and directly to the layout plane at its bottom, wherein the area of a first cross-section of the bottom of the deformation section is larger than the area of a second cross-section of the structuring section. The exemplary embodiments of the present invention further disclose an electronic device comprising a power module and a liquid cooling module. The power module comprises: a substrate comprising a plate, an inner metal layer formed on one side of the plate, and an outer metal layer formed on the other side of the plate; a power chip attached to the inner metal layer of the substrate and not electrically coupled to the outer metal layer, the outer metal layer being a component of the power chip The power module comprises a layout plane facing away from the substrate; an encapsulation body encapsulating the substrate and the power chip, wherein the layout plane of the outer metal layer is exposed on the encapsulation body and is coplanar with an adjacent surface of the encapsulation body; and a patterned thermal interface material comprising multiple thermal interface pieces directly attached to the layout plane, each of which has: a structuring section, wherein the structuring sections of the multiple thermal interface pieces are spaced apart and adjacent to e