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DE-102025127101-A1 - Power semiconductor module with external contact surfaces

DE102025127101A1DE 102025127101 A1DE102025127101 A1DE 102025127101A1DE-102025127101-A1

Abstract

A power semiconductor module is presented, comprising a substrate with a substrate carrier, a plurality of conductive traces arranged thereon, and a power semiconductor device arranged on one of these conductive traces and internally connected in a circuit-compliant manner. The module also includes an electrically conductive, planar intermediate element, the first surface of which facing the substrate is electrically connected to a contact surface of the substrate. A contact element is provided for external connection to the substrate, the contact element being entirely within the substrate. The first surface of the contact element facing the substrate is electrically connected to the second surface of the intermediate element opposite the first. The contact element laterally overlaps the associated intermediate element on one side. The module is encapsulated with a potting compound that covers the substrate, leaving a section of the second surface of the contact element exposed. A corresponding manufacturing process for this power semiconductor module is also presented.

Inventors

  • Andreas Wohlfahrt

Assignees

  • SEMIKRON DANFOSS ELEKTRONIK GMBH & CO. KG

Dates

Publication Date
20260513
Application Date
20250710
Priority Date
20241113

Claims (12)

  1. Power semiconductor module (1) with a substrate (2) comprising a substrate carrier (20), on which a plurality of conductor tracks (22, 24) are arranged and a power semiconductor device (26) is arranged on one of these conductor tracks (22, 24) and internally connected in a circuit-compliant manner, with an electrically conductive planar intermediate element (3), the first surface (300) of which facing the substrate (2) is electrically conductively connected to a contact surface (220, 260) of the substrate (2), with a contact element (4) for external connection of the substrate (2), wherein the contact element (4) is arranged completely within the substrate (2) and its first surface (400) facing the substrate (2) is electrically conductively connected to the second surface (320) of the intermediate element (3) opposite the first, wherein the contact element (4) laterally overlaps the associated intermediate element (3) on one side, with a potting compound (5) which encapsulates the substrate (2) covered and frees up a section (422) of the second of the first opposite surface (420) of the contact element (4).
  2. Power semiconductor module according to Claim 1 , wherein the contact surface (260) of the substrate (2) is designed as a load connection surface of the power semiconductor device (26).
  3. Power semiconductor module according to Claim 1 or 2 , wherein the contact surface (220) of the substrate (2) is formed as a section of a conductor track (22).
  4. Power semiconductor module according to one of the preceding claims, wherein the area of the second surface (320) of the intermediate element (3) is smaller than the area of the first surface (400) of the contact element (4).
  5. Power semiconductor module according to one of the preceding claims, wherein the thickness of the intermediate element (3) is greater than the thickness of the contact element (4).
  6. Power semiconductor module according to one of the preceding claims, wherein a contact element (4) is electrically connected to a plurality of intermediate elements (3).
  7. A method for manufacturing a power semiconductor module (1) according to any one of the preceding claims, comprising the following steps: a) providing a substrate carrier (20) with a plurality of conductor tracks (22, 24) arranged thereon; b) arranging and metallurgically bonding a power semiconductor device (26) onto a conductor track (24); c) arranging and metallurgically bonding an intermediate element (3) onto a conductor track (22, 24) or onto a load connection surface of the power semiconductor device (26); d) arranging and metallurgically bonding the contact element (4) onto the intermediate element (3), wherein the contact element (4) laterally overlaps the associated intermediate element (3) on one side; e) encapsulating the substrate (2) such that a section (422) of the second surface (420) of the contact element (4) remains exposed and thus accessible from the outside.
  8. Procedure according to Claim 7 , wherein steps b) and c) are performed simultaneously and the intermediate element (3) is arranged on a conductor track (22).
  9. Procedure according to Claim 7 or 8 , wherein in step c) the material-bonded connection of the intermediate element (3) with the conductor track (22,24) is carried out as an adhesive, soldering, welding or sintering connection.
  10. Procedure according to Claim 7 or 8 , wherein in step c) the material-bonded connection of the intermediate element (3) with the power semiconductor device (26) is carried out as an adhesive, solder or sintered connection.
  11. Procedure according to one of the Claims 7 until 10 , wherein in step d) the material-bonded connection of the contact element (4) with the intermediate element (3) is carried out as an adhesive, soldering, welding or sintering connection.
  12. Procedure according to one of the Claims 7 until 11 , wherein prior to process step d) a module-internal connection device is arranged or formed to form the circuit-compliant connection of the power semiconductor device (26).

Description

The invention describes a power semiconductor module comprising a substrate, a substrate carrier, a plurality of conductive traces arranged thereon, and a power semiconductor device arranged on one of these conductive traces and internally connected in a circuit-compliant manner, with an electrically conductive, planar contact element as the external load connection of the power semiconductor module. The invention further describes a manufacturing method for such a power semiconductor module. The DE 10 2005 061 772 A1 Disclosing a power semiconductor module, the module comprises at least one substrate plate having, on a first side, a first metal layer facing outwards and forming part of the outer surface of the power semiconductor module, and on a second side, a second metal layer facing inwards to which at least one power semiconductor device is attached. The module also includes a plastic body made of a thermosetting plastic, which encloses the substrate plate except for the first metal layer or at least a portion thereof. The aim is to ensure satisfactory cooling of the semiconductor devices and a sufficient service life. For this purpose, the plastic is designed to have a coefficient of thermal expansion that corresponds to that of the substrate plate. With knowledge of the prior art, the invention is based on the objective of providing an encapsulated power semiconductor module and a method for its manufacture which allows a compact design, in particular with a small footprint. This problem is solved according to the invention by a power semiconductor module, preferably without a frame-like or other housing, in particular a plastic housing, with a substrate comprising a substrate carrier, a plurality of conductor tracks arranged thereon, and a component arranged on one of these conductor tracks and internally connected in accordance with the circuit. A power semiconductor device comprising an electrically conductive, planar intermediate element, the first surface of which facing the substrate is electrically connected to a contact surface of the substrate, a contact element for external connection of the substrate, the contact element being completely located within the substrate and the first surface of which facing the substrate being electrically connected to the second surface opposite the first of the intermediate element, the contact element laterally overlapping the associated intermediate element on one side, and a potting compound, in particular made of a thermosetting plastic, also referred to as a transfer mold compound, which covers the substrate and leaves a section of the second surface opposite the first of the contact element exposed. The phrase "that the contact element is completely within the substrate" means that the arrangement area of the contact element is limited to the area of the substrate, and that the contact element is therefore not arranged to project laterally beyond the substrate surface when viewed in the direction of view. It can be advantageous if the substrate's contact surface is configured as a load connection surface for the power semiconductor device. Likewise, it can be advantageous if the substrate's contact surface is configured as a section of a conductor track. It may be preferable if the area of the second surface of the intermediate element is smaller than the area of the first surface of the contact element. It can be advantageous if the thickness of the intermediate element is greater than the thickness of the contact element. In particular, the thicknesses of multiple intermediate elements can vary. It may still be preferred if a contact element is electrically connected to a plurality of intermediate elements. The problem is further solved by a method for manufacturing a power semiconductor module according to one of the preceding claims comprising the following steps: a) Providing a substrate carrier with a plurality of conductor tracks arranged on it; b) Arranging and metallurgically bonding a power semiconductor device on a conductor track; c) Arranging and materially bonding an intermediate element on a conductor track or on a load connection surface of the power semiconductor device; d) Arranging and materially bonding the contact element on the intermediate element, wherein the contact element laterally overlaps the associated intermediate element on one side; e) Pouring the substrate in such a way that a section of the second surface of the contact elements are saved and thus remain accessible from the outside. It can be advantageous if steps b) and c) are carried out simultaneously and the intermediate element is placed on a conductor track. It may be preferred if, in step c), the material-bonded connection of the intermediate element to the conductor track is implemented as an adhesive bond, soldering, welding, or sintering connection. It may also be preferred if, in step c), the material-bonded connection of the intermediate element to the po