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DE-102025139425-A1 - Display device

DE102025139425A1DE 102025139425 A1DE102025139425 A1DE 102025139425A1DE-102025139425-A1

Abstract

A display device is disclosed comprising a substrate (110) containing a display area (AA) and a non-display area (NA) surrounding the display area (AA), a sensor section (A1; A2) provided in the display area (AA), several first transistors (OT1; OT2) provided in the display area (AA) on the substrate (110) and configured to contain an oxide semiconductor layer, and a hydrogen uptake pattern (280) located in the sensor section (A1, A2) and arranged adjacent to the oxide semiconductor layer of the first transistors (OT1; OT2).

Inventors

  • Ji Hwan JUNG

Assignees

  • LG DISPLAY CO., LTD.

Dates

Publication Date
20260513
Application Date
20250929
Priority Date
20241111

Claims (19)

  1. A display device comprising: a substrate (110) comprising a display area (AA) and a non-display area (NA) outside the display area; a sensor section (A1; A2) comprising a transparent area (TA) in the display area (AA); multiple first transistors (T1; OT1; OT2) provided in the display area (AA) on the substrate (110), each of the multiple first transistors comprising an oxide semiconductor layer; and a hydrogen uptake pattern (280) located in the transparent area (TA) and arranged planarly adjacent to the oxide semiconductor layer of at least one of the multiple first transistors (T1; OT1; OT2).
  2. Display device according to Claim 1 , wherein the hydrogen uptake pattern (280) includes a conductive oxide.
  3. Display device according to Claim 1 or 2 , wherein the hydrogen uptake pattern (280) comprises a conductive oxide containing indium.
  4. Display device according to one of the preceding claims, wherein the hydrogen uptake pattern (280) comprises a material having light transmission in an infrared wavelength range.
  5. Display device according to one of the preceding claims, wherein the hydrogen uptake pattern (280) is arranged in the same layer as the oxide semiconductor layer of the several first transistors (T1; OT1; OT2).
  6. Display device according to one of the preceding claims, wherein the hydrogen uptake pattern (280) has a higher hydrogen uptake capacity than the oxide semiconductor layer of the several first transistors (T1; OT1; OT2).
  7. Display device according to one of the preceding claims, further comprising a sensor section (A1; A2) located below the substrate (110), wherein the hydrogen uptake pattern (280) overlaps with the sensor section (A1; A2).
  8. Display device according to one of the preceding claims, further comprising a polycrystalline silicon layer between the substrate (110) and the oxide semiconductor layer, wherein at least one inorganic thin insulating layer (124; 125; 126; 127; 128) is arranged between the oxide semiconductor layer and the polycrystalline silicon layer.
  9. Display device according to Claim 8 , wherein at least one section of the polycrystalline silicon layer overlaps with the hydrogen uptake pattern (280).
  10. Display device according to one of the preceding claims, wherein the oxide semiconductor layer of the at least one of the several first transistors (OT1; OT2) comprises a first active layer (181) and a second active layer (182) having different carrier mobilities.
  11. Display device according to one of the preceding claims, further comprising a second transistor (LT) comprising a polycrystalline silicon layer arranged between the substrate (110) and the oxide semiconductor layer of the several first transistors (OT1; OT2) provided in the display area.
  12. Display device according to Claim 11 , wherein the display area (AA) comprises a first area (AA1) in which the sensor section (A1; A2) is arranged and a second area (AA2) in which the sensor section is not arranged, the first area (AA1) of the substrate (110) comprises the transparent area (TA) and several first radiating sections (PG), the second area (AA2) of the substrate (110) comprises several second radiating sections (PG), and in the first area (AA1) electrodes of the several first transistors (OT1; OT2) and the second transistor (LT) do not overlap with the transparent area (TA).
  13. Display device according to Claim 12 , wherein in the first area (AA1) the hydrogen uptake pattern (280) is arranged between oxide semiconductor layers of adjacent first transistors (OT1; OT2) of the several first transistors.
  14. Display device according to Claim 12 or 13 , where the density of several first transistors (OT1; OT2) in the first area (AA1) is less than the density of transistors comprising an oxide semiconductor layer in the second area (AA2).
  15. Display device according to one of the Claims 12 until 14 , wherein each of the several first radiating sections and the several second radiating sections is connected to one of the first transistors (OT1; OT2).
  16. Display device according to one of the preceding claims, wherein the hydrogen uptake pattern (280) is in the permeable area (TA) is divided into several pieces and the width of each of the divided hydrogen uptake pattern pieces is greater than the distance between adjacent hydrogen uptake pattern pieces.
  17. Display device according to one of the preceding claims, further comprising: the second transistor (LT) comprising a polycrystalline silicon layer (151) between the substrate (110) and the oxide semiconductor layer (182) of the at least one of the several first transistors (OT1), wherein the second transistor (LT) is arranged in the non-display area (NA) of the substrate; and a third transistor (OT2) comprising an active layer (181) arranged in the same layer as the oxide semiconductor layer of the at least one of the several first transistors (OT1).
  18. Display device according to Claim 17 , wherein the carrier mobility of the oxide semiconductor layer of at least one of the several first transistors (OT1) differs from the carrier mobility of the active layer of the third transistor (OT2).
  19. Display device according to one of the Claims 12 until 18 , if he is from Claim 12 depends, which further comprises a thin planarization layer (135) arranged over the multiple first transistors (OT1; OT2) and the hydrogen uptake pattern (280), wherein each of the first radiating sections and the second radiating sections comprises a light-emitting device (ED; 300) on the thin planarization layer (135) and the light-emitting device (ED; 300) comprises an anode (310; 330), an intermediate layer (320) and a cathode (330; 310), and each of the multiple first transistors (OT1; OT2) and the anode (310; 330) of each light-emitting device (ED; 300) are connected by a contact hole in the thin planarization layer (135).

Description

This registration claims the benefits of Korean patent application no. 10-2024-0159598 , submitted on November 11, 2024. BACKGROUND OF THE REVELATION Territory of Revelation The present disclosure relates to a display device and in particular to a light-emitting display device which can improve the sensitivity of a sensor section and the reliability of internal elements. Discussion of the related field Display devices that show images, such as televisions, monitors, smartphones, tablets and laptops, are used in various ways and forms. A display device contains multiple pixels to display an image and has transistors to control the operation of each pixel. Among display devices, light-emitting display devices, which have a light-emitting device in the display panel without a separate light source for compactness of the device and clear color display, are considered competitive applications. A light-emitting device contains an anode and a cathode facing each other as electrodes and an emission layer between the anode and the cathode, and may include a common layer for transferring holes and electrons to the emission layer. Meanwhile, recent display devices incorporate structures that include sensor sections for various purposes, and a variety of research and development is being carried out on them. SUMMARY OF THE REVELATION One objective of the present disclosure is to provide a light-emitting display device with improved sensitivity of a sensor section. Another objective of the present disclosure is to provide a light-emitting display device that can improve the reliability of a transistor. A further objective of the present disclosure is to provide a display device which further includes a configuration that can prevent influences caused by hydrogen, etc., generated by an arrangement structure such as an adjacent thin-film transistor, etc., in a transparent area that does not have a configuration of metal (a wiring), thereby improving the reliability of the transparent area and increasing the transmission in the transparent area. A further objective of the present disclosure is to provide a display device which has improved reliability by further providing a hydrogen uptake pattern which can prevent hydrogen generated during a process from causing operational deterioration of elements due to movement between thin insulating layers. A further objective of the present disclosure is to provide a display device in which a hydrogen uptake pattern can be formed which can reduce the elemental defect rate due to the hydrogen flow, which can affect the operation of elements, without providing an additional layer, thereby reducing the amounts of materials used in the manufacturing process, such as gas, etchant, etc., to manufacture the display device and thereby reducing the generation of greenhouse gases during the manufacturing process. One or more of the above-mentioned problems are solved by the features of an independent claim. According to one aspect of the present disclosure, a display device is provided comprising a substrate containing a display area and a non-display area outside the display area, and a sensor section provided within the display area. The display device may include several first transistors provided within the display area on the substrate and configured to include an oxide semiconductor layer. The display device may include a hydrogen uptake pattern located on the sensor section. The hydrogen uptake pattern may be arranged adjacent to the oxide semiconductor layer of the first transistors. According to another aspect of the present disclosure, a display device is provided which comprises: a substrate having a display area and a non-display area, The display device comprises a sensor section surrounding the display area. The sensor section may have a transparent area, in particular a transparent area within the display area. In other words, the display device may include a transparent area located within the sensor section of the display device. The sensor section may be provided within the display area. The transparent area may be located within the display area. The display device may include several first transistors located within the display area on the substrate and comprising an oxide semiconductor layer. The display device may include a hydrogen uptake pattern located within the transparent area. The hydrogen uptake pattern may be arranged planarly adjacent to the oxide semiconductor layer of at least one of the several first transistors. That is, the hydrogen uptake pattern may be located in the same plane as the oxide semiconductor layer and adjacent to the oxide semiconductor layer. The hydrogen uptake pattern may be located in the same layer as the oxide semiconductor layer. The hydrogen uptake pattern may be located on the sensor section. One or more of the identified aspects described above may include the features of one or more of the following embodiments, or may include on