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DE-102025145050-A1 - ANTI-COROSION Particles in Semiconductor Device

DE102025145050A1DE 102025145050 A1DE102025145050 A1DE 102025145050A1DE-102025145050-A1

Abstract

A semiconductor module comprises a power electronics carrier containing a structured metallization layer arranged on an electrically insulating substrate; a power semiconductor die mounted on the power electronics carrier; an enclosure surrounding an internal volume above the power electronics carrier; a volume of electrically insulating polymer material arranged within the internal volume; and a concentration of sacrificial particles dispersed within the volume of electrically insulating polymer, wherein the sacrificial particles are metal oxide particles.

Inventors

  • Isabelle Graf
  • Johannes Uhlig

Assignees

  • INFINEON TECHNOLOGIES AG

Dates

Publication Date
20260513
Application Date
20251103
Priority Date
20241113

Claims (20)

  1. Semiconductor module (100) comprising: a power electronics carrier (102) comprising a structured metallization layer (104) arranged on an electrically insulating substrate (106); a power semiconductor die (108) mounted on the power electronics carrier (102); an enclosure (114) surrounding an internal volume above the power electronics carrier (102); a volume of electrically insulating polymer material arranged within the internal volume; and a concentration of sacrificial particles (128) dispersed within the volume of electrically insulating polymer, the sacrificial particles (128) being metal oxide particles.
  2. Semiconductor module (100) according to Claim 1 , where the cations of the metal oxide particles have a net charge of +1.
  3. Semiconductor module (100) according to Claim 2 , where the metal oxide particles are particles made of copper oxide (Cu 2 O).
  4. Semiconductor module (100) according to one of the Claims 1 until 3 , wherein the volume of the electrically insulating polymer material includes a filler material.
  5. Semiconductor module (100) according to one of the Claims 1 until 4 , whereby cations of the metal oxide form a stable sulfide with a sulfur-containing gas.
  6. Semiconductor module (100) according to Claim 5 , where the sulfur-containing gas is hydrogen sulfide ( H2S ).
  7. Semiconductor module (100) according to one of the Claims 1 until 6 , wherein the concentration of sacrificial particles (128) relative to the electrically insulating polymer is between 0.1%-50%.
  8. Semiconductor module (100) according to one of the Claims 1 until 6 , where the concentration of sacrificial particles (128) is between 1% and 10%.
  9. Semiconductor module (100) according to one of the Claims 1 until 8 , wherein the volume of the electrically insulating polymer is a potting compound that covers the power electronics carrier (102) and encapsulates the power semiconductor die (108).
  10. Semiconductor module (100) according to Claim 8 , wherein the sacrificial particles (128) are distributed throughout the entire volume of the potting compound.
  11. Semiconductor module (100) according to Claim 9 , wherein the sacrificial particles (128) are copper oxide (Cu 2 O) particles.
  12. Semiconductor module (100) according to one of the Claims 1 until 9 , wherein the volume of the electrically insulating polymer in which the sacrificial particles (128) are dispersed is an adhesive layer.
  13. Semiconductor module (100) according to one of the Claims 1 until 12 , which further comprises a concentration of filler particles dispersed within the volume from the electrically insulating polymer.
  14. Semiconductor module (100) according to Claim 13 , wherein the filler particles are dispersed throughout an entire volume of the electrically insulating polymer and wherein the sacrificial particles (128) are dispersed throughout an entire volume of the electrically insulating polymer.
  15. Semiconductor module (100) according to Claim 14 , wherein the sacrificial particles (128) are copper oxide (Cu 2 O) particles and wherein the filler particles are silicon dioxide (SiO 2 ).
  16. Semiconductor module (100) according to Claim 15 , wherein the sacrificial particles (128) have a grain size of no more than 100 µm.
  17. Semiconductor module (100) according to Claim 16 , where the concentration of the sacrificial particles (128) is between 0.1% and 50%.
  18. Semiconductor module (100) according to Claim 17 , where the concentration of the sacrificial particles (128) is between 1% and 10%.
  19. Semiconductor module (100) according to Claim 14 , wherein the concentration of the filler particles relative to the electrically insulating polymer is between 0.1% and 50%.
  20. Semiconductor module (100) according to Claim 14 , wherein the volume of the electrically insulating polymer is a single region of potting compound covering the power electronics carrier (102) and encapsulating the power semiconductor die (108).

Description

BACKGROUND Many different applications, such as automotive and industrial applications, utilize power semiconductor devices designed to handle voltages on the order of 600 V, 1200 V, or higher. These power semiconductor devices can be configured as a power conversion circuit, such as a single-phase or multi-phase half-wave rectifier, single-phase or multi-phase full-wave rectifier, voltage regulator, inverter, and so on. Some power applications use power modules that include power semiconductor dies and associated logic and passive components in a single package. Other applications use discrete semiconductor packages containing power semiconductor dies encapsulated in a potted housing. Power devices are susceptible to corrosion in certain environments. For example, some application environments contain sulfur-containing gases, such as hydrogen sulfide ( H₂S ), gaseous sulfur ( S₈ ), methanethiol ( CH₃SH ), and dimethyl sulfide (( CH₃ ) ₂S ), etc., which can penetrate even the densest materials and cause significant, unwanted, and damaging corrosion on metal surfaces. Current solutions for protecting electronic components of semiconductor devices from this type of corrosion are expensive to implement and/or ineffective under all conditions. SUMMARY A semiconductor module is disclosed. According to one embodiment, the semiconductor module comprises a power electronics carrier comprising a structured metallization layer arranged on an electrically insulating substrate; a power semiconductor die mounted on the power electronics carrier; an enclosure surrounding an inner volume above the power electronics carrier; a volume of electrically insulating polymer material arranged within the inner volume; and a concentration of sacrificial particles dispersed within the volume of electrically insulating polymer, wherein the sacrificial particles are a metal salt, semimetal salt, metal oxide, or semimetal oxide with a cation. A semiconductor device is disclosed. According to one embodiment, the semiconductor device comprises a semiconductor die, an encapsulation body made of an electrically insulating material that encapsulates the semiconductor die, and a concentration of sacrificial particles dispersed within an electrically insulating region of the semiconductor device, wherein the sacrificial particles comprise a metal salt, semimetal salt, metal oxide, or semimetal oxide with a cation. A specialist will recognize additional features and benefits upon reading the following detailed description and examining the accompanying drawings. BRIEF DESCRIPTION OF THE FIGURES The elements in the drawings are not necessarily to scale relative to one another. Identical reference numerals denote corresponding similar parts. The features of the various illustrated embodiments can be combined unless they are mutually exclusive. Embodiments are shown in the drawings and are described in detail in the following description. 1 Illustrates a semiconductor module with a concentration of sacrificial particles dispersed within a volume of a polymer material, according to one embodiment. 2 Figure 1 illustrates a semiconductor module with a concentration of sacrificial particles dispersed within a volume of a polymer material, according to another embodiment. 3 , which the 3A and 3B includes, illustrates a semiconductor package with a concentration of sacrificial particles dispersed within a volume of a polymer material, according to one embodiment. 3A illustrates an external view of the semiconductor package; and 3B illustrates an interior view of the semiconductor package. 4 Figure 1 illustrates a semiconductor module with a concentration of sacrificial particles dispersed within a volume of a polymer material, according to another embodiment. DETAILED DESCRIPTION Embodiments of a semiconductor device with a concentration of sacrificial particles dispersed within a volume of an electrically insulating polymer are described here. The volume of the electrically insulating polymer can be any dielectric that encapsulates or contacts a metal surface that is susceptible to corrosion, e.g., a potting compound of a power module, an adhesive layer of a strip. The sacrificial particles are configured to react with corrosive gases that may diffuse into the volume of the electrically insulating polymer, thereby depriving the protected metal surface of a corresponding corrosive reaction. According to the embodiments described herein, the sacrificial particles are a metal salt, semimetal salt, metal oxide, or semimetal oxide with a cation. Sacrificial particles of this type offer numerous advantages. For example, these particles can react with a sulfur-containing gas, such as hydrogen sulfide ( H₂S ), to form a stable sulfide under low pressure and/or humidity conditions. Additionally, the metal salt or metal oxide can be electrically non-conductive, thus maintaining the dielectric strength of the electrically insulating polymer in which they are dis