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DE-112021005355-B4 - OPTOELECTRONIC ARRANGEMENT

DE112021005355B4DE 112021005355 B4DE112021005355 B4DE 112021005355B4DE-112021005355-B4

Abstract

Optoelectronic arrangement (1) with - at least two semiconductor laser devices (10) configured to emit electromagnetic radiation, and - an optical superposition element (20) with at least one radiation entry surface (20A) and one radiation exit surface (20B), wherein - each semiconductor laser component (10) is assigned an optical component (30), - each semiconductor laser device (10) emits a plurality of spatially separated entry beams (R1), - all incoming beams (R1) of a semiconductor laser device (10) pass through the respective associated optical element (30), wherein several incoming beams (R1) emitted by a semiconductor laser device (10) are fanned out against each other after passing through the optical element (30) in such a way that the incoming beams (R1) enter the optical superposition element (20) at different angles of incidence (α), and - Entrance beams (R1) from different semiconductor laser devices (10) exit at the radiation exit surface (20B) of the optical superposition element (20) superimposed in a plurality of exit beams (R2), wherein - the optical elements (30) have a distance (D) from the optical superposition element (20), - the distance (D) of each optical element (30) is set such that the entrance beams (R1) from different semiconductor laser elements (10) at the The radiation exit surface (20B) of the optical superposition element (20) emerges superimposed in common exit beams (R2), - the exit beams (R2) superimposed at a common point leave the optical superposition element (20) at a common exit angle (β), - each semiconductor laser device (10) comprises a plurality of waveguides (101) each emitting an entrance beam (R1), and - the waveguides (110) of a semiconductor laser device (10) can be controlled independently of each other.

Inventors

  • Nicole Berner
  • Jörg Erich Sorg
  • Karsten Auen

Assignees

  • AMS-OSRAM INTERNATIONAL GMBH

Dates

Publication Date
20260513
Application Date
20211220
Priority Date
20210201

Claims (11)

  1. Optoelectronic arrangement (1) comprising - at least two semiconductor laser devices (10) configured to emit electromagnetic radiation, and - an optical superposition element (20) with at least one radiation entry surface (20A) and a radiation exit surface (20B), wherein - each semiconductor laser device (10) is associated with an optical element (30), - each semiconductor laser device (10) emits a plurality of spatially separated entry beams (R1), - all entry beams (R1) of a semiconductor laser device (10) pass through the respective associated optical element (30), wherein several entry beams (R1) emitted by a semiconductor laser device (10) are fanned out after passing through the optical element (30) such that the entry beams (R1) enter the optical superposition element (20) at different angles of incidence (α), and - entry beams (R1) of different semiconductor laser devices (10) exit at the radiation exit surface (20B) of the optical superposition element (20) in a plurality of exit beams (R2) superimposed, wherein - the optical elements (30) have a distance (D) from the optical superposition element (20), - the distance (D) of each optical element (30) is set such that the entrance beams (R1) from different semiconductor laser devices (10) exit at the radiation exit surface (20B) of the optical superposition element (20) in common exit beams (R2) superimposed, - the exit beams (R2) superimposed at a common point form the optical superposition exit element (20) at a common exit angle (β), - each semiconductor laser device (10) comprises a plurality of waveguides (101) which each emit an entrance beam (R1), and - the waveguides (110) of a semiconductor laser device (10) can be controlled independently of each other.
  2. Optoelectronic arrangement (1) according to the preceding claim, wherein different entry beams (R1) of a semiconductor laser device (10) have different principal wavelengths.
  3. Optoelectronic arrangement (1) according to one of the preceding claims, wherein corresponding entrance beam bundles (R1) of different semiconductor laser devices (10) have different principal wavelengths.
  4. Optoelectronic arrangement (1) according to the preceding claim, wherein the principal wavelengths of entrance beams (R1) of different semiconductor laser devices (10) differ by at least 10 nm, preferably by at least 20 nm.
  5. Optoelectronic arrangement (1) according to one of the preceding claims, wherein the differences in the principal wavelengths of the entry beams (R1) of each of a semiconductor laser device (10) differ from each other by at least 0.5 nm.
  6. Optoelectronic arrangement (1) according to one of the preceding claims, wherein at least one ray of an entrance beam (R1) strikes the optical element (30) outside an optical axis (301) of the optical element (30).
  7. Optoelectronic arrangement (1) according to one of the preceding claims, wherein the optical elements (30) are made of the same material and/or have the same geometric dimensions.
  8. Optoelectronic arrangement (1) according to one of the preceding claims, wherein the optical elements (30) are designed as collimating lenses.
  9. Optoelectronic arrangement (1) according to one of the preceding claims, wherein the semiconductor laser elements (10) emit the same number of entry beams (R1).
  10. Optoelectronic arrangement (1) according to one of the preceding claims, wherein at least one semiconductor laser element (10) has a constant waveguide spacing (W).
  11. Optoelectronic arrangement (1) according to the preceding claim, wherein the waveguide spacings (W) of all semiconductor laser devices (10) are equal.

Description

An optoelectronic arrangement is described. This optoelectronic arrangement is specifically designed to generate electromagnetic radiation, for example, light perceptible to the human eye. One task to be solved is to specify an optoelectronic arrangement that emits electromagnetic radiation with an increased spectral bandwidth. From the printed materials: US 2007 / 0 297 061 A1 , US 2019 / 0 219 912 A1 , DE 10 2012 203 683 A1 , US 2018 / 0 231 882 A1 , WO 2020 / 008 656 A1 , US 6 124 973 A , WO 2008 / 029 337 A1 , US 2019 / 0 361 327 A1 and US 2002 / 0 196 414 A1 optoelectronic arrangements are known. The optoelectronic arrangement comprises at least two semiconductor laser devices configured to emit electromagnetic radiation. One semiconductor laser device is specifically designed to emit coherent or partially coherent electromagnetic radiation. Advantageously, a semiconductor laser device emits electromagnetic radiation with a small spectral bandwidth, low divergence, and high beam intensity. The optoelectronic arrangement comprises an optical superposition element with at least one radiation entry surface and one radiation exit surface. The radiation entry surface is specifically designed to couple electromagnetic radiation into the optical superposition element. For example, the optical superposition element may include multiple radiation entry surfaces on different sides of the optical superposition element. The radiation entry surface and/or the radiation exit surface may, in particular, have an antireflection layer. An antireflection layer can advantageously reduce or prevent unwanted reflection of electromagnetic radiation at the radiation entry surfaces and the radiation exit surface of the optical superposition element. The optical superposition element is designed to superimpose rays entering the optical superposition element via the radiation entrance surface and to allow them to exit the radiation exit surface. The optical superposition element is preferably formed with a radiation-transparent material. For example, the optical superposition element has a plurality of reflective surfaces designed to reflect and deflect electromagnetic radiation. Preferably, some of the reflective surfaces exhibit wavelength-dependent reflectivity. In particular, the reflective surfaces can be configured, at least partially, as dichroic mirrors. Furthermore, reflective surfaces can also be configured as λ/4 plates to modify the polarization of incident electromagnetic radiation. Each semiconductor laser device is associated with an optical element. This optical element is, for example, a lens. The optical element is typically made of a radiation-transmitting material. For instance, the optical element serves to modify the propagation direction and/or divergence of a beam of light passing through it. Furthermore, several optical elements can be integrated into a cohesive optical structure. Using a cohesive optical structure can advantageously reduce adjustment requirements, as the optical elements within it are rigidly connected. Each semiconductor laser device emits a plurality of spatially separated incident beams. In particular, a semiconductor laser device emits a plurality of incident beams, and a semiconductor laser device emits a single incident beam. The incident beams propagate, for example, in a single direction. Preferably, the incident beams are aligned parallel to each other and exit the semiconductor laser device, for example, perpendicular to a radiation output surface of the semiconductor laser device. For example, an incident beam is a Gaussian beam. The incident beams strike the radiation entrance surface of the optical superposition element at an entrance distance from each other. An entrance distance is the shortest distance between two incident beams on the radiation entrance surface of the optical superposition element. Preferably, the entrance distance between all incident beams of a semiconductor laser device is the same. All incident beams of a semiconductor laser device pass through the respective associated optical element, whereby several incident beams emitted by a semiconductor laser device are fanned out towards each other after passing through the optical element in such a way that the incident beams enter the optical superposition element at different angles of incidence. Preferably, one of the impact beam perpendicular to the entrance surface of the optical superposition element. Entrance beams from different semiconductor laser devices emerge from the radiation output surface of the optical superposition element, forming a plurality of superimposed exit beams. The exit beams have an exit spacing. This exit spacing corresponds to the shortest distance between any two exit beams on the radiation output surface of the optical superposition element. Preferably, all exit beams have the same exit spacing. In other words, the incident beams from different semiconductor laser devices ar