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DE-112024002835-T5 - Semiconductor devices with sidewall cutouts

DE112024002835T5DE 112024002835 T5DE112024002835 T5DE 112024002835T5DE-112024002835-T5

Abstract

Implementations of a semiconductor device (250) can include a first surface (265) with a first perimeter (P 260 ); and a second surface (262) opposite the first surface (265), wherein the second surface (262) has a second perimeter (P 262 ), the first perimeter (P 260 ) being larger than the second perimeter (P 262 ). The semiconductor device (250) can include a side wall (264) extending between the first surface (265) and the second surface (262), the side wall (264) defining an overhang (266) where a width (W 266 ) of the overhang (266) extends between the first perimeter (P 260 ) and the second perimeter (P 262 ) and a thickness (T 266 ) of the overhang (266) is less than a thickness (T 250 ) of the semiconductor device (250). The overhang (266) can be configured to keep epoxy away from the first side (265).

Inventors

  • Rennier Sarmiento Rodriguez
  • John Alexander Lapiz Soriano
  • Jorell Dulay PELINGO

Assignees

  • SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Dates

Publication Date
20260513
Application Date
20240301
Priority Date
20231208

Claims (20)

  1. Semiconductor device (250) comprising: a first surface (265) with a first perimeter (P 260 ); a second surface (262) opposite the first surface (265), wherein the second surface (262) has a second perimeter (P 262 ), the first perimeter (P 260 ) being larger than the second perimeter (P 262 ); a side wall (264) extending between the first surface (265) and the second surface (262), wherein the side wall (264) defines an overhang (266), a width (W 266 ) of the overhang (266) extending between the first perimeter (P 260 ) and the second perimeter (P 262 ), a thickness (T 266 ) of the overhang (266) being less than a thickness (T 250 ) of the semiconductor device (250), wherein the overhang (266) is configured to keep epoxy away from the first side (265).
  2. Semiconductor device according to Claim 1 , wherein the side wall (264) is curved or rounded.
  3. Semiconductor device according to Claim 1 , wherein the side wall (264) is angled.
  4. Semiconductor device according to Claim 1 , wherein the side wall (364) encloses a slope (369).
  5. Semiconductor device according to Claim 1 , wherein the side wall (264) is mechanically cut or laser cut.
  6. Semiconductor device according to Claim 1 , wherein the thickness (T 250 ) of the semiconductor device (250) is between 50 micrometers and 150 micrometers.
  7. Semiconductor device according to Claim 1 , wherein the thickness (T 266 ) of the overhang (266) is 50% of the semiconductor device thickness (T 250 ).
  8. Method for singulating a plurality of dies from a semiconductor substrate (350), the method comprising: cutting a recess (368) into a lower region (372) of a die (350), wherein the recess (368) has a first width (W 368 ) along a lower surface (362) of the die (350), wherein the recess (368) has at least one chamfered edge (369); and singulating the die (350) at the recess (368) using a kerf width (W 369 ) of a second width (W 369 ), wherein the second width (W 369 ) is less than the first width (W 368 ).
  9. Method for singulation according to Claim 8 , wherein the recess (368) is configured to prevent epoxy from flowing onto an upper surface (360) of the die (350).
  10. Methods for singulating according to Claim 8 , wherein a side wall (364) extends between an upper surface (360) of the die (350) and a lower surface (362) of the die (350), the side wall (364) defining an overhang (366) adjacent to the recess (368), a thickness (T 366 ) of the overhang (366) being less than a thickness (T 350 ) of the die (350), the overhang (366) being configured to prevent epoxy from flowing onto the upper surface (360) of the die (350).
  11. Methods for singulating according to Claim 10 , wherein the thickness (T 366 ) of the overhang (366) is 50% of the thickness (T 350 ) of the die (350).
  12. Methods for singulating according to Claim 8 , wherein a thickness (T 350 ) of the die (350) is between 50 micrometers and 150 micrometers.
  13. Methods for singulating according to Claim 8 , wherein the recess (368) is mechanically cut.
  14. Method for singulating a plurality of dies from a semiconductor substrate (652), the method comprising: forming a recess (626) in a backside layer (620) applied to a backside (614) of a semiconductor substrate (652) using a stencil (606), wherein the recess (626) has a first width (W 626 ) along a first surface (622) of the backside layer (620); and forming a plurality of dies (630) by singulating the semiconductor substrate (652) in the recess (626) using a kerf width (W 618 ) of a second width (618), wherein the second width (618) is less than the first width (W 626 ).
  15. Methods for singulating according to Claim 14 , wherein the first surface (622) of the back side layer (620) is adjacent to the back side (614) of the semiconductor substrate (652).
  16. Methods for singulating according to Claim 14 , wherein the back side layer (620) comprises epoxy, adhesive, a die-bonding material or any combination thereof.
  17. Methods for singulating according to Claim 14 , wherein the back side layer (620) comprises only a carbon-containing material.
  18. Method for singulation according to Claim 14 , wherein a side wall (634) extends between the back surface (614) of the semiconductor substrate (620) and the first surface (622) of the back layer (620), and an area of the back surface (614) of the semiconductor substrate (652) extends beyond the first surface (622) of the back layer (620).
  19. Method for singulation according to Claim 18 , wherein the second width (618) is 50% of a thickness (T 630 ) of the semiconductor device.
  20. Method for singulation according to Claim 14 , wherein the thickness of the semiconductor substrate (T 630 ) ranges from 50 micrometers to 150 micrometers.

Description

BACKGROUND 1. Technical field Aspects of this document relate generally to semiconductor devices and methods for their fabrication. More specific implementations include a recess or overhang formed in a sidewall of the semiconductor device. 2. State of the art Semiconductor devices include integrated circuits found in common electrical and electronic devices such as phones, desktops, tablets, other data processing equipment, and other electronic devices. During manufacturing, wafers are separated into dies. The dies are then packaged to allow them to communicate with a motherboard or other printed circuit board to which the housing is coupled. SUMMARY Implementations of a semiconductor device can include a first surface with a first perimeter; and a second surface opposite the first surface, wherein the second surface has a second perimeter and the first perimeter is larger than the second perimeter. The semiconductor device can include a sidewall extending between the first surface and the second surface, wherein the sidewall defines an overhang where a width of the overhang extends between the first perimeter and the second perimeter and a thickness of the overhang is less than a thickness of the semiconductor device. The overhang can be configured to keep epoxy away from the first surface. Implementations of semiconductor devices may include one, all, or any of the following: The side wall can be curved or rounded. The side wall can be square. The side wall can include a slope. The side panel can be cut mechanically or by laser. The thickness of the semiconductor device can range from 50 micrometers to 150 micrometers. The thickness of the overhang can be 50% of the thickness of the semiconductor device. Implementations of a method for singulating a plurality of dies from a semiconductor substrate can include cutting a recess into a lower region of a die, wherein the recess has a first width along a lower surface of the die and the recess has at least one chamfered edge. The method can also include singulating the die at the recess using a kerf width of a second width, wherein the second width may be smaller than the first width. Implementations of a method for singulating a large number of dies from a semiconductor substrate may include one, all, or any of the following: The recess can be configured to prevent epoxy from flowing onto a top surface of the die. The sidewall can extend between a top surface of the die and a bottom surface of the die, with the sidewall defining an overhang adjacent to the recess. The thickness of the overhang can be less than the thickness of the die, and the overhang can be configured to prevent epoxy from flowing onto the top surface of the die. The thickness of the overhang can be 50% of the thickness of the die. The thickness of the die can range from 50 micrometers to 150 micrometers. The recess can be cut mechanically. Implementations of a method for singulating a plurality of dies from a semiconductor substrate may include forming a recess in a backside layer applied to the backside of a semiconductor substrate using a stencil, wherein the recess has a first width along a first surface of the backside layer; and forming a plurality of dies by singulating the semiconductor substrate in the recess using a kerf width of a second width. The second width may be smaller than the first width. Implementations of a method for singulating a large number of dies from a semiconductor substrate may include one, all, or any of the following: The first surface of the backside layer can be adjacent to the backside of the semiconductor substrate. The backing layer can include epoxy, adhesive, a die-bonding material, or any combination thereof. The back layer can only enclose a carbon-containing material. The sidewall can extend between the back surface of the semiconductor substrate and the first surface of the back layer, and an area of the back surface of the semiconductor substrate can extend beyond the first surface of the back layer. The second width can be 50% of the thickness of the semiconductor device. The thickness of the semiconductor substrate can range from 50 micrometers to 150 micrometers. The foregoing and other aspects, features and advantages will be evident to professionals from the DESCRIPTION and DRAWINGS as well as from the CLAIMS. BRIEF DESCRIPTION OF THE DRAWINGS The following describes implementations in conjunction with the accompanying drawings, where identical reference symbols denote similar elements and where: 1 a lateral cross-sectional view of an implementation of a semiconductor device coupled to a substrate by an adhesive; 2 a partial view of the implementation of the semiconductor device and semiconductor substrate of 1 is; 3 a partial view of the semiconductor device of 1 is; 4 a lateral cross-sectional view of an implementation of a semiconductor substrate; 5 a lateral cross-sectional view of the semiconductor substrate of 4 is that which is coupl