DE-112024003123-T5 - Semiconductor light emission device

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Abstract

A semiconductor light-emitting device is provided that is suitable for size reduction, can be densely arranged in a grid or matrix configuration, and exhibits high overcurrent protection. A semiconductor light-emitting device comprises: a mounting substrate with at least one pair of placement electrodes, each consisting of an anode and a cathode, provided on a first principal face of a flat base material consisting of a semiconductor of a first conduction type; and at least one pair of mounting electrodes, each consisting of an anode and a cathode, provided on a second principal face of the base material opposite the first principal face; a semiconductor light-emitting element placed on the pair of placement electrodes, wherein a p-electrode and an n-electrode are electrically connected to corresponding electrodes of the pair of placement electrodes; and a pair of conductive vias, each configured to electrically connect corresponding mounting electrodes of the pair of mounting electrodes to corresponding placement electrodes of the pair of placement electrodes. and a diffusion area which has a second conductor type opposite to the first conductor type and is provided on an inner wall surface of the base material in contact with the conductive vias.

Inventors

Keisuke Nakata
Daizo KAMBARA
Yoichi Shimoda

Assignees

STANLEY ELECTRIC CO., LTD.

Dates

Publication Date: 20260513
Application Date: 20240709
Priority Date: 20230727

Claims (12)

A semiconductor light-emitting device comprising: a mounting substrate in which at least one pair of placement electrodes, each consisting of an anode and a cathode, are provided on a first principal surface of a flat base material consisting of a semiconductor of a first conduction type, and at least one pair of mounting electrodes, each consisting of an anode and a cathode, are provided on a second principal surface of the base material opposite the first principal surface; a semiconductor light-emitting device placed on the pair of placement electrodes, wherein a p-electrode and an n-electrode are electrically connected to corresponding electrodes of the pair of placement electrodes; a pair of conductive vias, each configured to electrically connect corresponding mounting electrodes of the pair of mounting electrodes to corresponding placement electrodes of the pair of placement electrodes; and a diffusion region comprising a second conduction type opposite to the first conduction type and located on an inner wall surface of the base material in contact with the conductive vias. is planned.
Semiconductor light emission device according to Claim 1 , wherein the diffusion area of the second conductor type is provided in both from the pair of conductive vias.
Semiconductor light emission device according to Claim 1 , wherein the diffusion area of the second conductor type is formed on the entire inner wall surface of a through hole in which conductive vias are provided.
Semiconductor light emission device according to Claim 1 , wherein: the semiconductor light-emitting element has an element anode and an element cathode on one face side, and the element anode and the element cathode are electrically connected to each of the pair of placement electrodes of the holding substrate.
Semiconductor light emission device according to Claim 1 , wherein an element anode and an element cathode are bonded to the pair of placement electrodes by means of a conductive bonding element, a periphery of each of the element anode and the element cathode of the semiconductor light-emitting element is covered with an insulating element protection layer, a periphery of the pair of placement electrodes of the holding substrate is covered with an insulating holding substrate insulation layer, and the element protection layer and the holding substrate insulation layer are in contact with each other at bonding parts between the element anode and one of the pair of placement electrodes and between the element cathode and the other of the pair of placement electrodes.
Semiconductor light emission device according to Claim 1 , wherein an element protection layer and a holding substrate insulation layer cover the entire periphery of the bonding part.
Semiconductor light emission device according to Claim 6 , where a bonding link is a gold-tin alloy.
Semiconductor light emission device according to Claim 1 , which further features: a component protection film configured to cover the entire outer surface of the semiconductor light-emitting element.
Semiconductor light emission device according to Claim 1 , wherein: the holding substrate has a plurality of pairs of placement electrodes and a plurality of pairs of mounting electrodes, and a plurality of semiconductor light-emitting elements are mounted on the plurality of pairs of placement electrodes.
Semiconductor light emission device according to Claim 9 , wherein identical and/or different light conversion elements are provided on light emission surfaces of the plurality of semiconductor light emission elements.
Semiconductor light emission device according to Claim 1 , where the base material is an n-type semiconductor or a p-type semiconductor.
Semiconductor light emission device according to one of the Claims 2 until 11 , wherein: a pair of Zener diodes is formed by the diffusion area provided on both from the pair of conductive vias and the base material, and the pair of Zener diodes is connected in series in reverse directions.

Description

Technical field The present invention relates to a semiconductor light emission device and in particular to a semiconductor light emission device comprising a semiconductor light emission element and a protective element. State of the art In recent years, semiconductor light-emitting devices such as light-emitting diodes (LEDs) have been incorporated into a wide variety of devices and used to increase output or control light distribution. Additionally, a protective element is integrated into the light-emitting device to improve its resistance to electrostatic discharge (ESD). For example, a headlight with variable light distribution (Adaptive Driving Beam or ADB) is known in an automotive headlight, in which a large number of semiconductor light-emitting elements are arranged and the light distribution is controlled. Furthermore, LED packages for high-output lighting and LED packages for information and communication devices, in which LEDs are arranged at a high density, etc., are known. Furthermore, patent literature 1 specifies an optoelectronic semiconductor device in which an ESD protection element is arranged between a carrier and a semiconductor body. Patent literature 2 specifies a light emission component comprising: a light emission element; and a mounting substrate provided on a side surface opposite a surface on which the light emission element is mounted, and containing a semiconductor electrostatic discharge protection element part connected to the light emission element. Patent literature 3 specifies a light emission element package comprising: a semiconductor substrate having first and second conductive vias; a diode formed by doping an impurity into a second surface of the semiconductor substrate and having a Zener breakdown voltage in both directions; and first and second external electrodes formed on the second surface such that the first and second conductive vias are each connected to the two ends of a bidirectional Zener diode region. Reference list Patent literature Patent Literature 1: Translated Japanese PCT patent publication no. 2018-519669Patent literature 2: WO2013/187318Patent literature 3: US2013/0020298A1 Summary of the invention Problem statement The present invention refers to the points described above, wherein an object of the present invention is to provide a semiconductor light emission device that is suitable for size reduction, can be densely arranged in a grid shape or matrix shape and has a high protection performance against an overcurrent. Problem solving A semiconductor light emission device according to an embodiment of the present invention comprises: a holding substrate in which at least one pair of placement electrodes, consisting of an anode and a cathode, are provided on a first principal surface of a flat base material consisting of a semiconductor of a first conduction type, and at least one pair of mounting electrodes, consisting of an anode and a cathode, are provided on a second principal surface of the base material opposite the first principal surface, a semiconductor light-emitting element placed on the pair of placement electrodes, wherein a p-electrode and an n-electrode are electrically connected to corresponding electrodes of the pair of placement electrodes, a pair of conductive vias, each configured to electrically connect corresponding mounting electrodes of the pair of mounting electrodes to corresponding placement electrodes of the pair of placement electrodes, and a diffusion area which has a second conductor type that is opposite to the first conductor type and is provided on an inner wall surface of the base material in contact with the conductive vias. Brief description of the drawings 1 Figure 1 is a schematic view showing an upper surface of a semiconductor light emission device according to a first embodiment.2 Figure 1 is a schematic view showing a side surface of the semiconductor light emission device according to the first embodiment.3 Figure 1 is a schematic view showing a back surface of the semiconductor light emission device according to the first embodiment.4 is a cross-sectional view showing a cross-section along line IV-IV of 1 shows.5 is a cross-sectional view showing a cross-section along line VV of 1 shows.6 is a schematic view that corresponds to the one in 4 The cross-section of the semiconductor light emission device shown corresponds to the bonding of a light emission element with a holding substrate.7 This is an equivalent circuit diagram of the semiconductor light emission device.8 is a schematic view showing VI properties of a pair of Zener diodes ZD1 and ZD2 formed on the light emission element and the holding substrate.9A is a cross-sectional view showing step S0 of a manufacturing process.9B This is a cross-sectional view showing step S1 of the manufacturing process.9C This is a cross-sectional view showing step S2 of the manufacturing process.9D This is a cross-sectional view showing step S3 of the manufacturi