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EP-3621112-B1 - DISPLAY APPARATUS

EP3621112B1EP 3621112 B1EP3621112 B1EP 3621112B1EP-3621112-B1

Inventors

  • WANG, SEONGMIN
  • Hwang, Youngin
  • YANG, YONGHO

Dates

Publication Date
20260513
Application Date
20190829

Claims (17)

  1. A display apparatus comprising: a first thin-film transistor (TFT) comprising a first semiconductor layer (21) comprising a silicon semiconductor; and a second TFT comprising a second semiconductor layer (31) comprising an oxide semiconductor, wherein one end of the second semiconductor layer (31) is connected to one end of the first semiconductor layer (21) of the first TFT and the other end of the second semiconductor layer (31) is connected to a gate electrode of the first TFT, the first and the second TFTs being formed above a substrate (110), characterized by a first shielding layer (120) configured to overlap the first TFT, the first shielding layer (120) interposed between the substrate (110) and the first TFT; and a second shielding layer (130a) configured to overlap the second TFT, the second shielding layer (130a) interposed between the substrate (110) and the second TFT, wherein a predetermined voltage is configured to be applied to each of the first and second shielding layers (120, 130a) according to a semiconductor type and a channel type of the first TFT and the second TFT, the display apparatus further comprising a capacitor (Cst) that is positioned above the substrate (110) and overlaps a channel of the first TFT, wherein the capacitor (Cst) comprises a first electrode and a second electrode over the first electrode, and the first electrode is the gate electrode of the first TFT.
  2. The display apparatus of claim 1, wherein the first shielding layer (120) and the second shielding layer (130a) are positioned on the same layer.
  3. The display apparatus of claim 1, wherein the first shielding layer (120) and the second shielding layer (130a) are positioned on different layers.
  4. The display apparatus of at least one of claims 1 to 3, wherein the second shielding layer (130a) is positioned on the same layer as the first semiconductor layer (21).
  5. The display apparatus of at least one of claims 1 to 4, wherein the second shielding layer (130a) is positioned on the same layer as the gate electrode of the first TFT.
  6. The display apparatus of at least one of claims 3 to 5, wherein the second shielding layer (130a) is positioned on the same layer as one electrode of the capacitor (Cst).
  7. The display apparatus of at least one of claims 1 to 6, further comprising a capacitor (C1, C2, C3) overlapping the second shielding layer (130a) and positioned between the second shielding layer (130a) and the second TFT.
  8. The display apparatus of claim 7, wherein one electrode of the capacitor (C1, C2, C3) is positioned on the same layer as one of the first semiconductor layer (21) of the first TFT and the gate electrode of the first TFT overlapping a channel region of the first semiconductor layer (21).
  9. The display apparatus of at least one of claims 1 to 8, further comprising at least one of: a first touch sensor (TS) overlapping the first TFT; and a second touch sensor overlapping the second shielding layer (130a) and positioned between the second shielding layer (130a) and the substrate (110).
  10. The display apparatus of at least one of claims 1 to 9, wherein the first shielding layer (120) is electrically connected to a power line for applying a power voltage.
  11. The display apparatus of at least one of claims 1 to 10, wherein the first shielding layer (120) is electrically connected to a power line (141) for applying an initialization voltage.
  12. The display apparatus of at least one of claims 1 to 11, wherein the first shielding layer (120) is electrically connected to the first semiconductor layer (21) of the first TFT.
  13. The display apparatus of at least one of claims 1 to 12, wherein the first shielding layer (120) is electrically connected to the gate electrode of the first TFT.
  14. The display apparatus of at least one of claims 1 to 13, wherein the second shielding layer (130a) is electrically connected to a power line (141) for applying an initialization voltage.
  15. The display apparatus of at least one of claims 1 to 14, wherein the second shielding layer (130a) is electrically connected to a gate electrode of the second TFT.
  16. The display apparatus of at least one of claims 1 to 15, wherein the first TFT is a driving transistor, and the second TFT is a switching transistor.
  17. The display apparatus of at least one of claims 1 to 15, wherein the first TFT is a switching transistor, and the second TFT is a driving transistor.

Description

BACKGROUND FIELD The present invention relates generally to a display apparatus. DISCUSSION OF THE BACKGROUND US 2017/162115 A1 describes a driving circuit including a current drive unit, a reset compensation and a light emitting control circuit. US 2017/338252 A1 describes a display device which includes a first substrate, a first thin film transistor disposed on the first substrate, a second thin film transistor disposed on the first substrate, a first capacitance electrode, and a second capacitance electrode. US 2018/033849 A1 describes different types of thin film transistors disposed on the same flexible substrate and an organic light emitting display using the same. Display apparatuses, such as organic light-emitting display apparatuses, liquid crystal display (LCD) apparatuses, and the like, include an array substrate including a thin-film transistor (TFT), a capacitor, and a plurality of wirings. The array substrate includes fine patterns, such TFTs, capacitors, and wirings, and such a display apparatus is driven by complicated connections between the TFT, the capacitor, and the wirings. As demand for display apparatuses having compact sizes and high resolution has increased, demand for efficient space arrangement between the TFT, the capacitor, and the wirings of the display apparatus, a connection structure thereof, a driving method, and quality improvement of a realized image is also increasing. The above information disclosed in this Background section is only for understanding of the background of the inventive concepts, and, therefore, it may contain information that does not constitute prior art. SUMMARY The present invention is defined by the subject matter of independent claim 1. Preferred embodiments are defined in the sub claims. Devices constructed according to exemplary implementations of the invention disclose a display apparatus including a transistor with an improved characteristics. Additional features of the inventive concepts will be set forth in the description which follows, and in part will be apparent from the description, or may be learned by practice of the inventive concepts. According to one or more embodiments, a display apparatus inter alia includes: a first thin-film transistor (TFT) (e.g., T1 discussed with reference to drawings) including a first semiconductor layer including a silicon semiconductor; a second TFT (e.g., T3 discussed with reference to drawings) including a second semiconductor layer including an oxide semiconductor, one end of the second semiconductor layer being connected to one end of the first semiconductor layer of the first TFT and the other end of the second semiconductor layer being connected to a gate electrode of the first TFT; a first shielding layer configured to overlap the first TFT, the first shielding layer interposed between a substrate and the first TFT; and a second shielding layer configured to overlap the second TFT, the first shielding layer interposed between the substrate and the second TFT. The first shielding layer and the second shielding layer may be positioned on the same layer. The first shielding layer and the second shielding layer may be positioned on different layers. The second shielding layer may be positioned on the same layer as the first semiconductor layer. The second shielding layer may be positioned on the same layer as a gate electrode of the first TFT. The display apparatus may further include a capacitor overlapping the first TFT, wherein the second shielding layer may be positioned on the same layer as one electrode of the capacitor. The display apparatus may further include a capacitor overlapping the second shielding layer and positioned between the second shielding layer and the second TFT. One electrode of the capacitor may be positioned on the same layer as one of the first semiconductor layer of the first TFT and a gate electrode of the first TFT overlapping a channel region of the first semiconductor layer. The display apparatus may further include at least one of: a first touch sensor overlapping the first TFT; and a second touch sensor overlapping the second shielding layer and positioned between the second shielding layer and the substrate. The first shielding layer may be electrically connected to a power line for applying a power voltage. The first shielding layer may be electrically connected to a power line for applying an initialization voltage. The first shielding layer may be electrically connected to the first semiconductor layer. The first shielding layer may be electrically connected to a gate electrode of the first TFT. The second shielding layer may be electrically connected to a power line for applying an initialization voltage. The second shielding layer may be electrically connected to the gate electrode of the second TFT. The first TFT may be a driving transistor, and the second TFT may be a switching transistor. The first TFT may be a switching transistor, and the second TFT may be