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EP-3723130-B1 - ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREFOR, AND DISPLAY APPARATUS

EP3723130B1EP 3723130 B1EP3723130 B1EP 3723130B1EP-3723130-B1

Inventors

  • GU, PENGFEI

Dates

Publication Date
20260506
Application Date
20181024

Claims (10)

  1. An array substrate, comprising a base substrate (10), a first buffer layer (20), an oxygen barrier pattern (301), and a second buffer layer (40) that are disposed on the base substrate (10) in sequence, and a first thin film transistor (TFT) (A) and a second TFT (B) that are disposed on the second buffer layer (40); wherein the first TFT (A) and the second TFT (B) are oxide semiconductor TFTs; the oxygen barrier pattern (301) includes a plurality of oxygen barrier portions (30) that are insulated and spaced apart; an orthographic projection of a portion of an active layer (51) of one first TFT (A) between a source (91) and a drain (92) on the base substrate (10) is located within a range of an orthographic projection of one corresponding oxygen barrier portion (30) of the plurality of oxygen barrier portions (30) on the base substrate (10); and an oxygen content of the first buffer layer (20) is higher than an oxygen content of the second buffer layer (40) ; characterized in that one second TFT (B) is a top-gate TFT; the array substrate further comprises a light-shielding pattern located between the base substrate (10) and the first buffer layer (20); and the light-shielding pattern includes a plurality of light-shielding portions (100) that are insulated and spaced apart; and an orthographic projection of a portion of an active layer (51) of one second TFT (B) between a source (91) and a drain (92) on the base substrate (10) is located within a range of an orthographic projection of one corresponding light-shielding portion (100) of the plurality of light-shielding portions (100) on the base substrate (10).
  2. The array substrate according to claim 1, characterized in that one first TFT (A) is a top-gate TFT; and an orthographic projection of the active layer (51) of one first TFT (A) on the base substrate (10) is located within the range of the orthographic projection of one corresponding oxygen barrier portion (30) of the plurality of oxygen barrier portions (30) on the base substrate (10).
  3. The array substrate according to claim 2, characterized in that a material constituting the oxygen barrier portion (30) is a conductive material; and a source (91) of the first TFT (A) is coupled to the oxygen barrier portion (30).
  4. The array substrate according to claim 1, characterized in that a material constituting the light-shielding portion (100) is a conductive material; and a source (91) of the second TFT (B) is coupled to the light shielding portion (100).
  5. The array substrate according to claim 1, characterized in that a material constituting the oxygen barrier portion (30) is a light-shielding material.
  6. The array substrate according to claim 1, characterized in that the oxygen barrier pattern (301) includes at least two thin films that are disposed on top of one another.
  7. The array substrate according to any one of claims 1-6, characterized in that the first TFT (A) is driving TFT, and the second TFT (B) is switching TFT.
  8. A display device, characterized in that the display device comprises the array substrate according to any one of claims 1-7.
  9. A method of manufacturing the array substrate according to any one of claims 1-7, characterized in that the method comprises: forming a first buffer layer (20), an oxygen barrier pattern (301), and a second buffer layer (40) on the base substrate (10) in sequence, an oxygen content of the first buffer layer (20) being higher than an oxygen content of the second buffer layer (40), and the oxygen barrier pattern (301) including a plurality of oxygen barrier portions (30) that are insulated and spaced apart; and forming a first TFT (A) and a second TFT (B) at the base substrate (10) on which the second buffer layer (40) is formed, an orthographic projection of a portion of an active layer (51) of one first TFT (A) between a source (91) and a drain (92) on the base substrate (10) being located within a range of an orthographic projection of one corresponding oxygen barrier portion (30) of the plurality of oxygen barrier portions (30) on the base substrate (10); wherein the first TFT (A) and the second TFT (B) are oxide semiconductor TFTs.
  10. The method for manufacturing an array substrate according to claim 9, characterized in that the step of forming a first buffer layer (20) and a second buffer layer (40), includes: adjusting a content of an oxygen source so that the content of the oxygen source in a process of forming a first buffer layer (20) is greater than that in a process of forming a second buffer layer (40).

Description

This application claims priority to Chinese Patent Application No. 201711266313.1, filed with the Chinese Patent Office on December 4, 2017, titled "ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF, AND DISPLAY APPARATUS". TECHNICAL FIELD The present application relates to the field of display technologies, and in particular, to an array substrate and a method of manufacturing the same, and a display device. BACKGROUND With the development of display technology, thin-film-transistor liquid-crystal display (TFT-LCD) devices and organic light-emitting diode (OLED) display devices have seen rapid development. US2015/228803A1 provides a semiconductor device. The semiconductor device includes a first transistor provided in a driver circuit portion and a second transistor provided in a pixel portion; the first transistor and the second transistor have different structures. In an oxide semiconductor film of each of the transistors, an impurity element is contained in regions which do not overlap with a gate electrode. The regions of the oxide semiconductor film which contain the impurity element function as low-resistance regions. Furthermore, the regions of the oxide semiconductor film which contain the impurity element are in contact with a film containing hydrogen. Furthermore, the first transistor provided in the driver circuit portion may include the oxide semiconductor film in which a first film and a second film are stacked, and the second transistor provided in the pixel portion may include the oxide semiconductor film which differs from the first film in the atomic ratio of metal elements. SUMMARY In a first aspect, an array substrate is provided and the array substrate is defined by the appended claim 1. In another aspect, a display device is provided and the display device is defined by the appended claim 8. In yet another aspect, a method of manufacturing an array substrate is provided and the method is defined by the appended claim 9. BRIEF DESCRIPTION OF THE DRAWINGS In order to describe technical solutions in some embodiments of the present disclosure or in the prior art more clearly, the accompanying drawings to be used in the description of embodiments or in the prior art will be introduced briefly. Obviously, the accompanying drawings to be described below are merely some embodiments of the present disclosure, and a person of ordinary skill in the art can obtain other drawings according to these drawings without paying any creative effort. FIG. 1 is a schematic diagram showing a structure of a pixel circuit of an array substrate, in accordance with some embodiments of the present disclosure;FIG. 2 is a schematic diagram showing a local structure of an array substrate, in accordance with some embodiments of the present disclosure;FIG. 3 is a schematic diagram showing a structure of an oxygen barrier pattern composed of a plurality of oxygen barrier portions in FIG. 2, in accordance with some embodiments of the present disclosure;FIG. 4 is a schematic diagram showing a local structure of another array substrate, in accordance with some embodiments of the present disclosure;FIG. 5 is a schematic diagram showing a local structure of yet another array substrate, in accordance with some embodiments of the present disclosure;FIG. 6 is a schematic diagram showing a local structure of yet another array substrate, in accordance with some embodiments of the present disclosure;FIG. 7 is a flow chart of a method of manufacturing an array substrate, in accordance with some embodiments of the present disclosure;FIG. 8 is a flow chart of another method of manufacturing an array substrate, in accordance with some embodiments of the present disclosure;FIG. 9 is a schematic diagram showing a local structure of yet another array substrate, in accordance with some embodiments of the present disclosure;FIG. 10 is a schematic diagram showing a local structure of yet another array substrate, in accordance with some embodiments of the present disclosure; andFIG. 11 is a schematic diagram showing a local structure of yet another array substrate, in accordance with some embodiments of the present disclosure. DETAILED DESCRIPTION The technical solutions in embodiments of the present disclosure will be described clearly and completely with reference to the accompanying drawings in embodiments of the present disclosure. Obviously, the described embodiments are merely some but not all of embodiments of the present disclosure. All other embodiments made on the basis of the embodiments of the present disclosure by a person of ordinary skill in the art without paying any creative effort shall be included in the protection scope of the present disclosure. A driving circuit for driving sub-pixels for display is provided in a display panel of a display device. The driving circuit may be a gate driving circuit disposed in a non-display area of the display panel, or may be pixel circuits disposed in a sub-pixel of the display panel. T