EP-4002003-B1 - DISPLAY DEVICE AND METHOD OF MANUFACTURING DISPLAY DEVICE

Inventors

• SHIN, HYUNEOK
• KANG, HYUNWOO
• SUNG, HYUNAH
• SONG, DOKEUN
• YANG, SUKYOUNG
• YEO, YUNJONG
• LEE, DONGMIN
• LEE, Donghyeok
• CHOI, SHIN IL

Dates

Publication Date

20260506

Application Date

20211101

Claims (15)

1. A display device including a display area and a non-display area surrounding at least a portion of the display area, the display device comprising: a base substrate; a buffer layer disposed on the base substrate; an active layer disposed on the buffer layer in the display area; a first gate insulation layer disposed on the active layer; a first gate line disposed on the first gate insulation layer in the display area; a first signal line disposed in a same layer as the first gate line in the non-display area, the first signal line including a same material as a material of the first gate line including a molybdenum layer; a second gate insulation layer disposed on the first gate line and the first signal line; a second gate line disposed on the second gate insulation layer in the display area; and a second signal line disposed in a same layer as the second gate line in the non-display area, the second signal line including a same material as a material of the second gate line including at least one of aluminum and an aluminum alloy, wherein a width of the first signal line is greater than a width of the second signal line.
2. The display device of claim 1, further comprising: an insulation interlayer disposed on the second gate line and the second signal line; and a conductive line disposed on the insulation interlayer in the display area, the conductive line including aluminum and titanium, wherein the conductive line directly contacts the second gate line through a second gate contact hole defined in the insulation interlayer.
3. The display device of claim 2, further comprising: a planarization layer disposed on the conductive line; a first electrode disposed on the planarization layer in the display area; an emission layer disposed on the first electrode; and a second electrode disposed on the emission layer.
4. The display device of claim 2 or 3, wherein the first signal line is configured to transmit a signal applied to at least one of the first gate line, the second gate line, and the conductive line.
5. The display device of any one of claims 1 to 4, wherein the second gate line includes: a first layer including aluminum or an aluminum alloy; and a second layer disposed on the first layer and including titanium or titanium nitride.
6. The display device of claim 5, wherein the second gate line further includes a third layer disposed on the second layer and including one of titanium and titanium nitride.
7. The display device of claim 6, wherein the second layer includes one of titanium and titanium nitride, and wherein the third layer includes another one of titanium and titanium nitride.
8. The display device of any one of claims 1 to 7, wherein the active layer includes polycrystalline silicon.
9. The display device of any one of claims 1 to 8, further including a bendable area disposed in the non-display area, wherein a first opening overlapping the bendable area is defined in the second gate insulation layer, the first gate insulation layer, and a first portion of the buffer layer, and wherein a second opening overlapping the bendable area is defined in a second portion of the buffer layer and a portion of the base substrate.
10. The display device of claim 9, wherein the base substrate includes: a first organic layer; a first barrier layer disposed on the first organic layer; a second organic layer disposed on the first barrier layer; and a second barrier layer disposed on the second organic layer, and wherein the buffer layer includes: a first buffer layer disposed on the base substrate and including silicon oxide; and a second buffer layer disposed on the first buffer layer and including silicon nitride.
11. The display device of claim 10, wherein the first portion of the buffer layer is the second buffer layer, wherein the second portion of the buffer layer is the first buffer layer, and wherein the portion of the base substrate is the second barrier layer.
12. The display device of claim 9, 10, or 11, wherein a width of the first opening is greater than a width of the second opening.
13. A method of manufacturing a display device, the method comprising: forming a buffer layer on a base substrate; forming an active layer on the buffer layer; forming a first gate insulation layer on the active layer; forming a first gate line on the first gate insulation layer, the first gate line including a molybdenum layer; forming a second gate insulation layer on the first gate line; forming a second gate line on the second gate insulation layer, the second gate line including aluminum or an aluminum alloy; forming an insulation interlayer on the second gate line; simultaneously defining an active contact hole which exposes the active layer in the insulation interlayer, the second gate insulation layer, and the first gate insulation layer, a first gate contact hole which exposes the first gate line in the insulation interlayer and the second gate insulation layer, and a first opening which overlaps a bendable area in the insulation interlayer, the second gate insulation layer, the first gate insulation layer, and a first portion of the buffer layer; and simultaneously defining a second gate contact hole which exposes the second gate line in the insulation interlayer and a second opening which overlaps the bendable area in a second portion of the buffer layer and a portion of the base substrate.
14. The method of claim 13, further comprising: after the simultaneously defining the active contact hole, the first gate contact hole, and the first opening and before the simultaneously defining the second gate contact hole and the second opening, heat-treating the active layer such that an oxide layer is formed on the active layer; and removing the oxide layer formed on the active layer by the heat-treatment.
15. The method of claim 13 or 14, further comprising: forming a conductive line on the insulation interlayer, the conductive line including aluminum and titanium, wherein the conductive line is connected to the active layer through the active contact hole, directly contacts the first gate line through the first gate contact hole, and directly contacts the second gate line through the second gate contact hole.

Description

BACKGROUND 1. Field Embodiments relate to a display device. More particularly, embodiments relate to a display device including wirings and a method of manufacturing the display device. 2. Description of the Related Art As a display field for visually expressing various electrical signals develops rapidly, various flat panel display devices having excellent characteristics such as reduction in thickness, light weight, low power consumption, etc., are used. Among the flat panel display devices, a liquid crystal display device and an organic light emitting display device are widely commercialized because of their excellent resolution and image quality. Specifically, the organic light emitting display device is drawing attention as a next-generation flat panel display device because of advantages such as fast response speed, low power consumption, and excellent viewing angle. US-A-2021/028066 discloses a display panel including a base layer, a signal line which is disposed on the base layer and includes a first layer including aluminium and a second layer disposed directly on the first layer and consisting of niobium, a first thin film transistor connected to the signal line, a second thin film transistor disposed on the base layer, a capacitor electrically connected to the second thin film transistor, and a light emitting element electrically connected to the second thin film transistor. US-B-9733538 discloses a TFT array substrate including gate bus lines made from a first material, source bus lines made from a second material, and pixel electrodes made from a third metal, a clock wiring made from the first metal material, a branch wiring made from the second material, and a connection conductor made from the third material. SUMMARY A display device may include lines transmitting various signals for displaying an image. In this regard, it may be desired to prevent damage to the lines in a process of manufacturing the display device, or to prevent a delay in a signal transmitted by the lines or deterioration of element characteristics due to the lines. Embodiments provide a display device including a line having high heat resistance to improve element characteristics. Embodiments provide a method of manufacturing a display device for preventing a line from being damaged. The invention provides display device according to claim 1 and a method according to claim 13. In an embodiment, the display device may further include an insulation interlayer disposed on the second gate line and the second signal line and a conductive line disposed on the insulation interlayer in the display area, the conductive line including aluminum and titanium. The conductive line may directly contact the second gate line through a second gate contact hole defined in the insulation interlayer. In an embodiment, the display device may further include a planarization layer disposed on the conductive line, a first electrode disposed on the planarization layer in the display area, an emission layer disposed on the first electrode, and a second electrode disposed on the emission layer. In an embodiment, the first signal line may transmit a signal applied to at least one of the first gate line, the second gate line, and the conductive line. In an embodiment, the second gate line may include a first layer including aluminum or an aluminum alloy and a second layer disposed on the first layer and including one of titanium and titanium nitride. In an embodiment, the second gate line may further include a third layer disposed on the second layer and including titanium or titanium nitride. In an embodiment, the second layer may include one of titanium and titanium nitride, and the third layer may include another one of titanium and titanium nitride. In an embodiment, the active layer may include polycrystalline silicon. In an embodiment, the display device may further include a bendable area disposed in the non-display area. A first opening overlapping the bendable area may be defined in the second gate insulation layer, the first gate insulation layer, and a first portion of the buffer layer. A second opening overlapping the bendable area may be defined in a second portion of the buffer layer and a portion of the base substrate. In an embodiment, the base substrate may include a first organic layer, a first barrier layer disposed on the first organic layer, a second organic layer disposed on the first barrier layer, and a second barrier layer disposed on the second organic layer. The buffer layer may include a first buffer layer disposed on the base substrate and including silicon oxide and a second buffer layer disposed on the first buffer layer and including silicon nitride. In an embodiment, the first portion of the buffer layer may be the second buffer layer, and the second portion of the buffer layer may be the first buffer layer. The portion of the base substrate may be the second barrier layer. In an embodiment, a width of the first openin