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EP-4044235-B1 - NANOWIRE-BASED µLED DISPLAY DESIGN METHOD

EP4044235B1EP 4044235 B1EP4044235 B1EP 4044235B1EP-4044235-B1

Inventors

  • GUO, TAILIANG
  • JIANG, Zongzhao
  • YE, YUN
  • YAN, QUN
  • XIE, Hongxing
  • YAO, JIANMIN

Dates

Publication Date
20260506
Application Date
20200831

Claims (7)

  1. A µLED display design method based on nanowire, comprising: growing different nanowire materials capable of generating three primary colors: red, green and blue on a substrate (11); and characterized in that the method further comprises: respectively dissolving the different nanowire materials in insulated photocuring adhesives and injecting the mixtures into different grids of a grid pool (40), and performing curing; and finally, arranging electrodes (60) on upper and lower surfaces of the grid pool (40); the µLED display design method based on nanowire specifically comprising the following steps: Step S1: growing the nanowire material for generating a light source for three primary colors: red, green and blue; Step S2: respectively doping the nanowire material for generating a light source for three primary colors: red, green and blue into the photocuring adhesives and stirring the mixtures fully, and evenly dispersing the nanowire material in the photocuring adhesives to obtain a fully stirred photocuring adhesive-nanowire material adhesive body; Step S3: respectively injecting the fully stirred photocuring adhesive-nanowire material adhesive body correspondingly into the grids of the grid pool (40) corresponding to sub-pixels of the three primary colors: red, green and blue, and performing photocuring, and cutting off the overflowing cured adhesive bodies by way of laser cutting after photocuring to obtain sub-pixel cured µLEDs; and Step S4: enabling an electrode capable of working under a condition of an alternating current to be in one-to-one-correspondence with the corresponding sub-pixel cured µLEDs on the upper and lower surfaces of the grid pool (40) by way of attaching a chip electrode or growing the electrode, and cutting off a desired display size by way of laser cutting; the Step S1 comprises the following steps: Step S11: cleaning and treating a substrate (11); Step S12: putting the substrate (11) in a reaction chamber of a physical vapor deposition device and starting evaporation of a nanowire buffer layer (12) to solve mismatch between the substrate and the nanowire in an axial direction, wherein the nanowire releases stress-strain caused by mismatch between the substrate and crystal lattices of the nanowire material along a side surface and a direction perpendicular to a junction interface during growth, so that materials with mismatched crystal lattices can be connected in series and grow in a radial direction or an axial direction conveniently; Step S13: putting the substrate (11) covered with a thin film of the buffer layer (12) in a multi-chip HVPE growth system, starting growing the nanowire at a low temperature by taking the substrate as a bottom, wherein the nanowire grows to become a structure of an electropositive tendency p-doped nanowire end-p-doped nanowire-n-doped nanowire-electronegative tendency n-doped nanowire end from bottom to top; and Step S14: cooling the structure to take out a sample so as to obtain the nanowire material.
  2. The µLED display design method based on nanowire according to claim 1, wherein the nanowire material is of a homogeneous structure, the upper and lower ends of the nanowire material are respectively n and p-doped, two end tops are respectively in electronegative tendency and electropositive tendency, and a hole electron recombination can be generated at a center of a junction of n and p homojunctions.
  3. The µLED display design method based on nanowire according to claim 1, wherein an inner diameter of the nanowire ranges from 40 nm to 60 nm, and a length thereof ranges from 300 nm and 400 nm.
  4. The µLED display design method based on nanowire according to claim 1, wherein for sub-pixels with different primary colors, a nanowire growth material is different direct band-gap semiconductor compounds from groups III-V.
  5. The µLED display design method based on nanowire according to claim 1, wherein the photocuring adhesive is a transparent insulating material.
  6. The µLED display design method based on nanowire according to claim 1, wherein the grid pool (40) is made from a transparent insulating material.
  7. The µLED display design method based on nanowire according to claim 1, wherein the electrode (60) is a material capable of working under a condition of an alternating current, including, but not limited to, graphene, PEDOT: PPS, and metals silver, platinum or gold.

Description

BACKGROUND OF THE INVENTION 1. Technical Field The present invention relates to the field of LED design, particularly to a µLED display design method based on nanowire. 2. Description of Related Art In the technical field of panel display, µLED has many advantages, and the most prominent advantages of µLED are low power consumption, high brightness, ultrahigh definition, high color saturation, higher response speed, longer service life, higher working efficiency and the like. It can be said that µLED is a reformed novel display technology and is expected to replace almost all TFT liquid crystal displays applied in the field of panel display. At present, a production process of µLED still adopts a conventional LED manufacturing mode, the size of a manufactured pn junction material is defined below 100 um by way of growth of various thin films, and in the growth process of the lamellar thin films, there is unavoidably a problem of mismatch of crystal lattices, and thus, it is necessary to introduce various buffer layers or functional layers in the manufacturing process of the lamellar µLED to solve the problem of mismatch of crystal lattices and improve the quantum conversion efficiency. Therefore, the lamellar structure becomes more complex. After the µLED is manufactured, it is necessary to cut the µLED into small nano-scaled LED chips and the chips are transferred to a circuit substrate via various mechanical tools. The process takes a lot of time as it is needed to pickup, place and assemble a huge amount of µLED chips. In order to solve the above-mentioned problems so as to improve the industrial efficiency of µLED and simplify the structure, it is an urgent need to develop and design a novel µLED. Patent US 2015/263066 A1 discloses a nanowire device and a method of forming a nanowire device that is poised for pick up and transfer to a receiving substrate are described. In an embodiment, the nanowire device includes a base layer and a plurality of nanowires on and protruding away from a first surface of the base layer. An encapsulation material laterally surrounds the plurality of nanowires in the nanowire device, such that the nanowires are embedded within the encapsulation material. Patent US 2014/338735 A1 discloses a transparent conductor including a conductive layer coated on a substrate is described. More specifically, the conductive layer comprises a network of nanowires that may be embedded in a matrix. The conductive layer is optically clear, patternable and is suitable as a transparent electrode in visual display devices such as touch screens, liquid crystal displays, plasma display panels and the like. BRIEF SUMMARY OF THE INVENTION For this purpose, the present invention is intended to provide a µLED display design method based on nanowire. The method can simplify the structure and enhance the industrial efficiency of µLED. The present invention is realized by adopting the following scheme: a µLED display design method based on nanowire specifically includes: growing different nanowire materials capable of generating three primary colors: red, green and blue on a substrate; respectively dissolving the different nanowire materials in insulated photocuring adhesives and injecting the mixtures into different grids of a grid pool, and performing curing; and finally, arranging electrodes on upper and lower surfaces of the grid pool. The method specifically includes the following steps: Step S1: growing the nanowire material for generating a light source for three primary colors: red, green and blue (a craft technique of MOCVD can be utilized), performing electropositive and electronegative tendency treatment on an end, and performing peeling after growth;Step S2: respectively doping the nanowire material for generating a light source for three primary colors: red, green and blue into the photocuring adhesives and stirring the mixtures fully (including mechanical stirring or magnetic stirring or ultrasonic stirring), and evenly dispersing the nanowire material in the photocuring adhesives to obtain a fully stirred photocuring adhesive-nanowire material adhesive body;Step S3: respectively injecting the fully stirred photocuring adhesive-nanowire material adhesive body correspondingly into the grids of the grid pool corresponding to sub-pixels of the three primary colors: red, green and blue, and performing photocuring, and cutting off the overflowing cured adhesive bodies by way of laser cutting after photocuring to obtain sub-pixel cured µLEDs, wherein in the process of injecting an adhesive solution mixed with the red, green and blue nanowire materials, the green and blue grid pools, the red and blue grid pools and the red and green grid pools can be shielded respectively, and the overflowing cured adhesive bodies are cut off by way of laser cutting after photocuring; andStep S4: enabling an electrode capable of working under a condition of an alternating current to be in one-to-one-correspondence