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EP-4048748-B1 - COMPOSITION AND METHOD FOR SELECTIVE OXIDE CMP

EP4048748B1EP 4048748 B1EP4048748 B1EP 4048748B1EP-4048748-B1

Inventors

  • JOHNSON, BRITTANY
  • HAINS, ALEXANDER W.
  • BROSNAN, SARAH
  • KRAFT, Steven

Dates

Publication Date
20260506
Application Date
20201022

Claims (11)

  1. A chemical mechanical polishing composition comprising: a liquid carrier; 0.01 to 2 weight percent of cubiform ceria abrasive particles at point of use, the cubiform ceria abrasive particles dispersed in the liquid carrier, wherein the cubiform ceria abrasive particles have an average particle size in a range from 50 to 500 nm, and wherein the cubiform ceria abrasive particles comprise a mixture of cerium oxide and lanthanum oxide; and at least one of an anionic compound and a nonionic compound, wherein the anionic compound or the nonionic compound is in a concentration of 0.01 weight percent to 2 weight percent of at point of use, and wherein the composition has a pH in a range from 9 to 11.
  2. The composition of claim 1, wherein the cubiform ceria abrasive particles have a molar ratio of lanthanum to lanthanum plus cerium in a range from about 1 to about 15 percent.
  3. The composition of claim 1, wherein the cubiform ceria abrasive particles have a BET surface area in a range from about 3 m 2 /g to about 14 m 2 /g.
  4. The composition of claims 1, wherein any one or more of the following applies, a) the anionic compound comprises a water-soluble polyelectrolyte, polyanions, polyacids, polyacrylates, poly(vinyl acid), anionic detergents, alkyl or alkyl ether sulfonates and sulfates, alkyl or alkyl ether phosphonates and phosphates, and alkyl or alkyl ether carboxylates; b) the anionic compound is an anionic homopolymer or copolymer and comprises at least one monomer unit selected from acrylic acid, methacrylic acid, maleic acid, vinyl sulfonic acid, sulfate, styrene sulfonic acid and phosphate; c) the anionic compound comprises poly(acrylic acid), poly(methacrylic acid), poly(maleic acid), poly(vinyl sulfonic acid), poly(styrene sulfonic acid), poly(vinyl sulfate), poly(2-acrylamido-2-methyl-1-propanesulfonic acid), poly(vinyl phosphoric acid), poly(methyl methacrylate-co-methacrylic acid), poly(acrylic acid-co-maleic acid), poly(acrylamide-co-acrylic acid), poly(4-styrenesulfonic acid-co-maleic acid), or a combinations thereof; d) the anionic compound is a non-polymeric compound and comprises an alkyl or alkyl aryl sulfate, an alkyl or alkyl aryl sulfonate, an alkyl or alkyl aryl phosphate, an alkyl or alkyl aryl carboxylate, or a combination thereof; e) the anionic compound is dodecylbenzene sulfonic acid, ammonium lauryl sulfate, stearic acid, dihexaphosphate, dodecylphosphoric acid, 1-decanesulfonate, a derivative thereof, an ammonium or sodium salt thereof, or a combination thereof; and f) the nonionic compound is a nonionic polymer comprising water-soluble polyethers, polyether glycols, alcohol ethoxylates, polyoxyalkylene alkyl ethers, polyesters, vinyl acrylates, or a combination thereof, wherein optionally the nonionic compound is an nonionic homopolymer or copolymer and comprises polyvinyl acetate, polyvinyl alcohol, polyvinyl acetal, polyvinyl formal, polyvinyl butyral, polyvinylpyrrolidone, poly(vinyl phenyl ketone), poly(vinylpyridine), poly(vinylimidazole), poly(acrylamide), polyacrolein, poly(methyl methacrylic acid), polyethylene, polyoxyethylene lauryl ether, polyhydroxyethylmethacrylate, poly(ethylene glycol) monolaurate, poly(ethylene glycol) monooleate, poly(ethylene glycol) distearate, poly(vinyl acetate-co-methyl methacrylate), poly(vinylpyrrolidone-co-vinyl acetate), poly(ethylene-co-vinyl acetate), and combinations thereof;
  5. The composition of claim 1, wherein the anionic compound comprises poly(acrylic acid).
  6. The composition of claim 1, wherein the nonionic compound comprises polyvinylpyrrolidone, poly(vinylpyrrolidone-co-vinyl acetate), or a mixture thereof.
  7. The composition of claim 1, wherein the anionic compound comprises poly(methacrylic acid), poly(vinyl sulfonic acid), poly(styrene sulfonic acid), poly(2-acrylamido-2-methyl-1-propanesulfonic acid), poly(4-styrenesulfonic acid-co-maleic acid), dodecylbenzene sulfonic acid, or a mixture thereof.
  8. A method of chemical mechanical polishing a substrate including a silicon oxide dielectric material, the method comprising: (a) providing a polishing composition comprising (i) a liquid carrier; (ii) cubiform ceria abrasive particles dispersed in the liquid carrier, wherein the cubiform ceria abrasive particles comprise a mixture of cerium oxide and lanthanum oxide; and (iii) at least one of an anionic compound and a nonionic compound, and wherein the composition has a pH in a range from 9 to 11; (b) contacting the substrate with said provided polishing composition; (c) moving said polishing composition relative to the substrate; and (d) abrading the substrate to remove a portion of the silicon oxide dielectric material from the substrate and thereby polish the substrate.
  9. The method of claim 8, wherein: the polishing composition comprises from about 0.01 to about 2 weight percent of the cubiform ceria abrasive particles at point of use, the cubiform ceria abrasive particles having an average particle size in a range from about 50 to about 500 nm; the nonionic compound comprises polyvinylpyrrolidone; the substrate further comprises a silicon nitride material; and a removal rate selectivity of the silicon oxide dielectric material to the silicon nitride material is less than about 1:1 in (d).
  10. The method of claim 8, wherein: the polishing composition comprises from about 0.01 to about 2 weight percent of the cubiform ceria abrasive particles at point of use, the cubiform ceria abrasive particles having an average particle size in a range from about 50 to about 500 nm; the anionic compound comprises poly(methacrylic acid), poly(vinyl sulfonic acid), poly(styrene sulfonic acid), poly(2-acrylamido-2-methyl-1-propanesulfonic acid), poly(4-styrenesulfonic acid-co-maleic acid), dodecylbenzene sulfonic acid, or a mixture thereof; and a removal rate of the silicon oxide dielectric material is at least 3000 Å/min while abrading in (d), wherein optionally: the substrate further comprises a silicon nitride material; and a removal rate selectivity of the silicon oxide dielectric material to the silicon nitride material is less than about 10:1 in (d).
  11. The method of claim 8, wherein said providing the polishing composition comprises (ai) providing a polishing concentrate and (aii) diluting the polishing concentrate with at least one part water to one part of the polishing concentrate.

Description

BACKGROUND OF THE INVENTION Chemical mechanical polishing is a key enabling technology in integrated circuit (IC) and micro-electro-mechanical systems (MEMS) fabrication. CMP compositions and methods for polishing (or planarizing) the surface of a substrate (such as a wafer) are well known in the art. Polishing compositions (also known as polishing slurries, CMP slurries, and CMP compositions) commonly include abrasive particles suspended (dispersed) in an aqueous solution and chemical additives for increasing the rate of material removal, improving planarization efficiency, and/or reducing defectivity during a CMP operation. Cerium oxide (ceria) abrasives are well known in the industry, particularly for polishing silicon containing substrates, for example, including silicon oxide materials, such as tetraethylorthosilicate (TEOS), silicon nitride, and/or polysilicon. Ceria abrasive compositions are commonly used in advanced dielectric applications, for example including shallow trench isolation applications. WO 2018/124017 discloses cerium oxide abrasive grains with which it is possible to improve a polishing rate. The cerium oxide abrasive grains can be used in an abrasive, wherein the cerium oxide abrasive grains have a 300°C or lower water production level, measured by temperature-programmed reduction (temperature-programmed reaction), of 8 mmol/m2 or higher per unit surface area of the cerium oxide abrasive grains. WO 2016/140968 discloses a chemical-mechanical polishing composition including first abrasive particles, wherein the first abrasive particles are wet-process ceria particles, have a median particle size of about 40 nm to about 100 nm, are present in the polishing composition at a concentration of about 0.005 wt.% to about 2 wt.%, and have a particle size distribution of at least about 300 nm, a functionalized heterocycle, a pH-adjusting agent, and an aqueous carrier, and wherein the pH of the polishing composition is about 1 to about 6. WO2018/229005 relates to cerium-based particles and their use as a component of a composition for polishing and to the method of preparation of the cerium-based particles. JP2017186196 A discloses a polishing slurry capable of polishing a silicone polished film at high speed. A rare earth element cerium composite oxide particle satisfies 3.8 ≤ A/B < 5, where A is area strength of a (111) surface and B is area strength of a (200) surface in an X ray diffraction (XRD) with a Cu-k α ray source. The manufacturing method of oxide particles can manufacture the rare earth element cerium composite oxide particle satisfies 3.8 ≤ A/B < 5, where A is area strength of the (111) surface and B is area strength of the (200) surface in an X ray diffraction (XRD) with a Cu-k α ray source by heating a composition containing a salt containing a rare earth element and water at 100°C or less. While the use of ceria abrasives is known, there remains a need for improved ceria abrasive based CMP compositions. In particular, there remains a need for CMP compositions that provide improved removal rates and improved planarization (e.g., reduced erosion and dishing). The further remains a need for compositions providing removal rate selectivity of one silicon containing material to another (e.g., silicon oxide to silicon nitride selectivity or silicon oxide to polysilicon selectivity). BRIEF SUMMARY OF THE INVENTION A chemical mechanical polishing composition for polishing a substrate having a silicon oxygen material (such as silicon oxide) is disclosed. The chemical mechanical polishing composition comprises: a liquid carrier; 0.01 to 2 weight percent of cubiform ceria abrasive particles at point of use, the cubiform ceria abrasive particles dispersed in the liquid carrier, wherein the cubiform ceria abrasive particles have an average particle size in a range from 50 to 500 nm, and wherein the cubiform ceria abrasive particles comprise a mixture of cerium oxide and lanthanum oxide; and at least one of an anionic compound and a nonionic compound, wherein the anionic compound or the nonionic compound is in a concentration of 0.01 weight percent to 2 weight percent of at point of use, and wherein the composition has a pH in a range from 9 to 11. The invention also provides a method of chemical mechanical polishing a substrate including a silicon oxide dielectric material, the method comprising: (a) providing a polishing composition comprising (i) a liquid carrier; (ii) cubiform ceria abrasive particles dispersed in the liquid carrier, wherein the cubiform ceria abrasive particles comprise a mixture of cerium oxide and lanthanum oxide; and (iii) at least one of an anionic compound and a nonionic compound, and wherein the composition has a pH in a range from 9 to 11; (b) contacting the substrate with said provided polishing composition; (c) moving said polishing composition relative to the substrate; and (d) abrading the substrate to remove a portion of the silicon oxide dielectric material