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EP-4159890-B1 - HEATING APPARATUS AND SEMICONDUCTOR PROCESSING DEVICE

EP4159890B1EP 4159890 B1EP4159890 B1EP 4159890B1EP-4159890-B1

Inventors

  • TIAN, Xiqiang

Dates

Publication Date
20260506
Application Date
20210526

Claims (13)

  1. A heating device configured to carry and heat a to-be-processed workpiece (100) in a semiconductor processing apparatus, wherein the heating device comprises a base (200), a heating assembly, and a cooling mechanism (400); the heating assembly is provided with a ventilation structure, the ventilation structure being configured to blow gas to an edge of the to-be-processed workpiece (100); the base (200) is arranged on a side of the heating assembly away from a heating surface of the heating assembly, and a mounting space is formed between the base (200) and the heating assembly, the cooling mechanism (400) being arranged in the mounting space, located at a position corresponding to an edge area of the heating surface, and configured to cool the heating assembly; the heating assembly includes a heating body (300), a gas channel plate (500) arranged on the side of the heating body (300) away from the heating surface, and a gas source channel (900) configured to be connected to a gas source, wherein the ventilation structure includes a first gas channel (310) and a second gas channel (600), an outlet of the first gas channel (310) is located at the edge area of the heating surface of the heating body (300), an inlet of the first gas channel (310) is located on a surface of the heating body (300) away from the heating surface, and the first gas channel (310) is configured to blow gas to the edge of the to-be-processed workpiece (100); characterized in that the second gas channel (600) is located between the gas channel plate (500) and the heating body (300), the second gas channel (600) is communicated with the inlet of the first gas channel (310), and the second gas channel (600) is communicated with the gas source channel (900); the second gas channel (600) includes a first sub-channel (610) and a second sub-channel (620), wherein the first sub-channel (610) is communicated with the first gas channel (310) and the second sub-channel (620), and the second sub-channel (620) is communicated with the gas source channel (900); and a gas storage volume of the second sub-channel (620) and a gas storage volume of the first gas channel (310) are both smaller than a gas storage volume of the first sub-channel (610), and a flow rate of the second sub-channel (620) is greater than a flow rate of the first gas channel (310).
  2. The heating device according to claim 1, wherein the cooling mechanism (400) includes an annular assembly, at least one of a cooling water channel (430) configured to transfer a cooling liquid or a cooling gas channel (410) configured to transfer a cooling gas being integrated in the annular assembly, an outlet of the cooling gas channel (410) facing a surface of the heating assembly away from the heating surface and configured to blow the cooling gas to the surface.
  3. The heating device according to claim 2, wherein, when the annular assembly is integrated with the cooling water channel (430) configured to transfer the cooling liquid and the cooling gas channel (410) configured to transfer the cooling gas, the annular assembly includes an annular body (401), a first annular cover (402), and a second annular cover (403), an annular groove is formed on a first surface of the annular body (401) facing the surface of the heating assembly away from the heating surface, and the first annular cover (402) is sealed and connected to the annular body (401) and forms the closed cooling water channel (430) with the annular groove; a plurality of gas blow holes (410b) are arranged in the annular body (401), an outlet of each of the gas blow holes (410b) is located on the first surface, an inlet of each of the gas blow holes (410b) is located on a second surface of the annular body (401) away from the first surface, the second annular cover (403) is sealedly connected to the annular body (401) on a side where the second surface of the annular body (401) is located, the second annular cover (403) and the annular body (401) form a closed annular gas channel (410a), and the annular gas channel (410a) is connected to inlets of the gas blow holes (410b).
  4. The heating device according to claim 3, wherein the plurality of gas blow holes (410b) are distributed on inner and outer sides of the cooling water channel (430), and gas blow holes (410b) on a same side are distributed along a circumferential direction of the annular body (401) at intervals.
  5. The heating device according to claim 2, wherein a heating member (440) is further integrated in the annular assembly, the heating member (440) being configured to heat at least one of the cooling water channel (430) or the cooling gas channel (410) integrated in the annular assembly.
  6. The heating device according to claim 5, wherein the heating member (440) includes a heating tube embedded in the annular assembly, and the heating tube is wounded around an axis of the annular assembly in a spiral plane shape.
  7. The heating device according to any one of claims 1 to 6, wherein the cooling mechanism (400) is in contact with the surface of the heating assembly away from the heating surface; or the cooling mechanism (400) is arranged at an interval from the surface of the heating assembly away from the heating surface, and a heat conductive member that is in contact with the cooling mechanism (400) and the surface of the heating assembly away from the heating surface is arranged between the cooling mechanism (400) and the surface of the heating assembly away from the heating surface.
  8. The heating device according to claim 1, wherein the first sub-channel (610) is an annular channel, a plurality of second sub-channels (620) are included, the plurality of second sub-channels (620) are distributed along a circumferential direction of the annular channel at intervals, each of the second sub-channels (620) is a straight channel extending along a radial direction of the annular channel, an end of the straight channel is communicated with the annular channel, and the other end of the straight channel is communicated with the gas source channel (900).
  9. The heating device according to any one of claims 1 to 8, wherein the second gas channel (600) is a groove formed on at least one of two opposite surfaces of the gas channel plate (500) and the heating body (300).
  10. The heating device according to claim 1, wherein a surface of the base (200) facing the gas channel plate (500) is provided with a mounting groove, the mounting groove and the gas channel plate (500) form the mounting space, the cooling mechanism (400) is arranged at a groove bottom of the mounting groove, and a high temperature-resistant member is arranged between the cooling mechanism (400) and the groove bottom.
  11. The heating device according to claim 1, wherein the heating assembly further includes an edge ring (301) surrounding the heating body (300), the first gas channel (310) includes a third sub-channel (310b) and a fourth sub-channel (310a), wherein the third sub-channel (310b) is arranged in the heating body (300), and an outlet of the third sub-channel (310b) is located on the outer peripheral wall of the heating body (300), and an inlet of the third sub-channel (310b) is located on the surface of the heating body (300) away from the heating surface and communicated with the first sub-channel (610); and an inner peripheral wall of the edge ring (301) is arranged at an interval from the outer peripheral wall of the heating body (300) to form the fourth sub-channel (310a), and the fourth sub-channel (310a) is communicated with the third sub-channel (310b).
  12. The heating device according to claim 11, wherein a cooling channel (320) configured to transfer a cooling medium is arranged in the edge ring (301).
  13. A semiconductor processing apparatus comprising a reaction chamber, wherein the reaction chamber is provided with the heating device according to any one of claims 1 to 12.

Description

TECHNICAL FIELD The present disclosure generally relates to the semiconductor manufacturing technology field and, more particularly, to a heating device and a semiconductor processing apparatus. BACKGROUND Chemical vapor deposition (hereinafter referred to as CVD) process is a technology that uses various energy sources such as heating or plasma to cause chemical reactions between experiment materials or cause the experiment material to chemically react with corresponding gas in a reactor in a chemical reaction manner to form another gaseous compound. Then, the gaseous compound is transferred to a corresponding area with a different temperature than a reaction material source area for deposition to form a solid deposit in a physical carrier or chemical migration manner. During the CVD process on a wafer 10, the wafer 10 is usually placed on a heater 20 as shown in FIG. 1. The heater 20 includes a heating plate 21. A vacuum suction hole is formed in a middle area of the heating plate 21. The vacuum suction hole is communicated with a vacuum pipeline 22. The wafer 10 can be adsorbed on the heating plate 21 through the vacuum suction hole. During a heating process on the wafer 10 by the heating plate 21, since pressure in a reaction chamber is generally higher than pressure in the vacuum pipeline 22, the pressure in an edge area between the wafer 10 and the heating plate 21 is relatively high, while the pressure in the middle area between the wafer 10 and the heating plate 21 is relatively low. Thus, in a certain period of time, the wafer has a higher temperature in the edge area and a lower temperature in the middle area of the wafer 10. Therefore, when the temperature in the edge area of the wafer 10 reaches a process temperature, the temperature in the middle area of the wafer 10 does not reach the process temperature. The temperature has a great impact on a film forming rate for the wafer 10. Normally, the higher the temperature is, the faster the film forming rate is. Thus, a film thickness at the edge area of the wafer 10 is greater than a film thickness in the middle area of the wafer 10, which causes the film thickness of different areas of the wafer 10 to be different. Thus, the uniformity of the film formation of the wafer 10 is poor. US patent application US2018/0190528A1 discloses an electrostatic chuck assembly, including a puck and a cooling plate. SUMMARY The present disclosure provides a heating device and a semiconductor processing apparatus, which can solve the problem of poor uniformity of the film formation of the wafer. To solve the above problem, the present disclosure adopts the following technical solutions. Embodiments of the present disclosure provide a heating device configured to carry and heat a to-be-processed workpiece in a semiconductor processing apparatus. The heating device includes a base, a heating assembly, and a cooling mechanism, wherein: the heating assembly is provided with a first gas channel, an outlet of the first gas channel is located at an edge area of a heating surface of the heating assembly, an inlet of the first gas channel is located on a surface of the heating assembly away from a heating surface, the first gas channel is configured to blow gas to an edge of the to-be-processed workpiece;the base is arranged on the side of the heating assembly away from the heating surface of the heating assembly, and a mounting space is formed between the base and the heating assembly, the cooling mechanism is arranged in the mounting space, located at a position corresponding to an edge area of the heating surface, and configured to cool the heating assembly;the heating assembly includes a heating body, a gas channel plate arranged on the side of the heating body away from the heating surface, and a gas source channel, a second gas channel is formed between the gas channel plate and the heating body, the second gas channel is communicated with the inlet of the first gas channel, and the second gas channel is communicated with the gas source channel;the second gas channel includes a first sub-channel and a second sub-channel, the first sub-channel is communicated with the first gas channel and the second sub-channel, and the second sub-channel is communicated with the gas source channel; anda gas storage volume of the second sub-channel and a gas storage volume of the first gas channel are both smaller than a gas storage volume of the first sub-channel, and a flow rate of the second sub-channel is greater than a flow rate of the first gas channel. In some embodiments, the cooling mechanism includes an annular assembly, at least one of a cooling water channel configured to transfer a cooling liquid or a cooling gas channel configured to transfer a cooling gas are integrated in the annular assembly, an outlet of the cooling gas channel faces a surface of the heating assembly away from the heating surface and configured to blow the cooling gas to the surface. In some embodime