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EP-4209913-B1 - STORAGE DEVICE AND METHOD OF OPERATING THE SAME

EP4209913B1EP 4209913 B1EP4209913 B1EP 4209913B1EP-4209913-B1

Inventors

  • KIM, SEUNGIL
  • KANG, Wonho
  • YU, GYEONGTAE
  • PARK, JEONGWOO
  • SONG, BYUNGJUNE
  • LEE, KYOUNGBACK
  • HWANG, Jeongsu

Dates

Publication Date
20260506
Application Date
20221031

Claims (15)

  1. A storage device (100, 200) comprising: a non-volatile memory device (120) including a first memory region (121, 220) and a second memory region (122, 230), memory cells of the first memory region (121, 220) being at different levels from memory cells of the second memory region (122, 230), and the second memory region (122, 230) having a higher reliability than the first memory region (121, 220); and a controller (110, 1110, 1220, 2700) configured to control a base data protection operation against a rework for a reflow process by including a first operation of migrating base data stored in the first memory region (121, 220) to the second memory region (122, 230) before the rework for the reflow process and a second operation of restoring the base data from the second memory region (122, 230) to the first memory region (121, 220) after completing the rework for the reflow process, wherein the controller (110, 1110, 1220, 2700) is configured to provide, to a host (10, 1100), management information (111_2, 210) including one or more of first information on a current state of the storage device (100, 200) in a base data protection operation against the rework for the reflow process, second information on the first memory region (121, 220), and third information on the second memory region (122, 230), and wherein base data is data that is permanently stored in the storage device (100, 200).
  2. The storage device (100, 200) of claim 1, wherein the first memory region (121, 220) comprises multilevel cells, and wherein the second memory region (122, 230) comprises single-level cells.
  3. The storage device (100, 200) of claim 1, wherein the first information represents one of a soldered state representing that the base data is stored in the first memory region (121, 220), a backup loading state representing that the first operation is being performed, and a backup complete state representing that the first operation is completed.
  4. The storage device (100, 200) of claim 3, wherein, when the storage device (100, 200) is in the soldered state, the controller (110, 1110, 1220, 2700) is configured to change a state of the storage device (100, 200) from the soldered state to the backup loading state in response to a request from the host (10, 1100) to change the state of the storage device (100, 200) to the backup loading state.
  5. The storage device (100, 200) of claim 3, wherein, when the storage device (100, 200) is in the backup complete state, the controller (110, 1110, 1220, 2700) is configured to change a state of the storage device (100, 200) from the backup complete state to the soldered state in response to a request from the host (10, 1100) to change the state of the storage device (100, 200) to the soldered state.
  6. The storage device (100, 200) of claim 1, wherein the base data comprises one or more of an operating system image for the storage device (100, 200) and debugging data for the storage device (100, 200).
  7. The storage device (100, 200) of claim 1, wherein the controller (110, 1110, 1220, 2700) is further configured to control the base data protection operation against the reflow process by including a third operation of migrating the base data stored in the first memory region (121, 220) to the second memory region (122, 230) before the reflow process and a fourth operation of restoring the base data from the second memory region (122, 230) to the first memory region (121, 220) after completing the reflow process.
  8. The storage device (100, 200) of claim 7, wherein the management information (111_2, 210) further comprises fourth information on one of an off state representing that a base data protection operation against the reflow process is deactivated, a pre-soldering state representing that the third operation is being performed, a loading complete state representing that the third operation is completed, and a soldered state representing that the base data is stored in the first memory region (121, 220) by the fourth operation.
  9. The storage device (100, 200) of claim 8, wherein the controller (110, 1110, 1220, 2700) is configured to prevent a change from the soldered state to the off state from occurring.
  10. The storage device of claim 1, wherein the second information represents a size of the base data stored in the first memory region (121, 220), and wherein the third information represents a free size of the second memory region (122, 230).
  11. The storage device (100, 200) of claim 1, wherein the host (10, 1100) is a first host (20) and the storage device (100, 200) is connected to a second host (30), host (10, 1100) different from the first host (20), before the rework for the reflow process, and wherein the controller (110, 1110, 1220, 2700) is configured to provide the management information (111_2, 210) to the second host (30).
  12. A method of operating a non-volatile storage device for protecting base data received from a host (10, 1100) in a rework for a reflow process, the method comprising: setting the storage device (100, 200) in a soldered state representing that the base data is stored in a first memory region (121, 220) after completing the reflow process for the storage device (100, 200); changing a state of the storage device (100, 200) from the soldered state to a backup loading state and performing a first operation of migrating the base data from the first memory region (121, 220) to a second memory region (122, 230) with higher reliability in response to a first state change request received from the host (10, 1100); changing a state of the storage device (100, 200) from the backup loading state to a backup complete state when the first operation is completed; and changing a state of the storage device (100, 200) from the backup complete state to the soldered state and performing a second operation of restoring the base data from the second memory region (122, 230) to the first memory region (121, 220) in response to a second state change request received from the host (10, 1100).
  13. The method of claim 12, wherein, when the storage device (100, 200) is in the backup complete state, the rework for the reflow process is performed.
  14. The method of claim 12, further comprising: updating first information on a current state of the storage device (100, 200) to one of the soldered state, the backup loading state, and the backup complete state; and storing second information on a size of the base data stored in the first memory region (121, 220) and third information on a free size of the second memory region (122, 230).
  15. The method of claim 12, further comprising: changing a state of the storage device (100, 200) from the backup loading state or the backup complete state to the soldered state in response to a request from the host (10, 1100) to cancel a base data protection operation.

Description

BACKGROUND Embodiments of the inventive concept relate to a storage device, and more particularly, to a storage device including a non-volatile memory device that may be capable of increasing data reliability and a method of operating the same. A semiconductor memory device may be classified as a volatile semiconductor memory device and a non-volatile semiconductor memory device. A volatile semiconductor memory device may read and write data at a high speed. However, when power supply thereto is blocked, stored data is lost. Conversely, a non-volatile semiconductor memory device may be used for storing content to be preserved regardless of whether power is supplied thereto. A representative example of a non-volatile semiconductor memory device is a flash memory device. Recently, NAND flash-based storage devices have become more commonly used as a storage medium of a mobile device. Frequently, the storage device is mounted on a printed circuit board (PCB) of the mobile device. For this purpose, a reflow process for the storage device may be performed. In the reflow process, a plurality of solder balls are formed on a surface of the storage device, which contacts the PCB. Due to heat generated by the reflow process, base data stored in the storage device may be lost. To prevent or reduce the risk of losing the base data due to the reflow process, the storage device may perform a base data protection operation under control by a host, which is limited to a first reflow process. Therefore, the base data may be at risk of being lost due to heat generated when a rework of the reflow process is performed. US 2021/240381 A1 discloses controlling firmware storage density based on at temperature detection. A data storage device stores data in non-volatile memory. In one approach, a method includes: storing software in a compressed format in a first mode (e.g., an SLC mode) in a non-volatile memory; exposing, while the software is stored in the first mode, the non-volatile memory to a temperature greater than a predetermined threshold; determining that the temperature of the non-volatile memory has fallen below the predetermined threshold; and in response to determining that the temperature of the non-volatile memory has fallen below the predetermined threshold: decompressing the stored software, and storing the decompressed software in a second mode (e.g., TLC mode) in the non-volatile memory. The second mode has a storage density higher than the first mode. US 2020/272363 A1 discloses reflow endurance improvements in triple-level cell NAND flash. Disclosed is a memory device and method of operating the same. In one embodiment, a method is disclosed comprising generating compressed data by compressing raw data for storage in a memory device, pre-programming a first region of the memory device with the compressed data, and, in response to detecting that the memory device has powered on, decompressing the compressed data, obtaining the raw data, and transferring the raw data to a second region of the memory device. SUMMARY The invention is set out in the appended claims. Embodiments of the inventive concept relate to a storage device configured to perform an operation for protecting base data stored therein against a rework performed on the storage device after a first reflow process and a method of operating the same. According to a partial aspect of the inventive concept, there is provided a storage device including a non-volatile memory device including a first memory region and a second memory region, memory cells of the first memory region being at different levels from memory cells of the second memory region and a controller configured to control a base data protection operation against a rework for a reflow process by including a first operation of migrating base data stored in the first memory region to the second memory region before the rework for a first reflow process and a second operation of restoring the base data from the second memory region to the first memory region after completing the rework for the reflow process. The controller is configured to provide, to a host, management information including at least one of first information on a current state of the storage device in a base data protection operation against the rework, second information on the first memory region, and third information on the second memory region, and wherein base data is data that is permanently stored in the storage device. According to another partial aspect of the inventive concept, there is provided a method of operating a storage device for protecting base data received from a host when a rework of a reflow process is performed. The method includes setting the storage device in a soldered state representing that the base data is stored in a first memory region after completing the reflow process for the storage device, changing a state of the storage device from the soldered state to a backup loading state for a fir