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EP-4250355-B1 - PACKAGE STRUCTURE OF BIDIRECTIONAL SWITCH, SEMICONDUCTOR DEVICE, AND POWER CONVERTER

EP4250355B1EP 4250355 B1EP4250355 B1EP 4250355B1EP-4250355-B1

Inventors

  • MA, ZHENG
  • CHEN, DONG
  • YAO, Xiaofeng

Dates

Publication Date
20260506
Application Date
20230322

Claims (8)

  1. A package structure (5) of a bidirectional switch, wherein the package structure (5) comprises a metal bottom plate (50), a first semiconductor switch (Q51), a second semiconductor switch (Q52), and a plurality of inner pins (531, 532, 533, 534, 535), and the plurality of inner pins (531, 532, 533, 534, 535) comprise a first inner pin (531), a second inner pin (532), a third inner pin (533), a fourth inner pin (534), and a fifth inner pin (535); the first semiconductor switch (Q51) and the second semiconductor switch (Q52) are disposed on the metal bottom plate (50), and both a first terminal of the first semiconductor switch (Q51) and a first terminal of the second semiconductor switch (Q52) are coupled to the metal bottom plate (50), wherein the first terminal of the first semiconductor switch (Q51) is a drain, and the first terminal of the second semiconductor switch (Q52) is a drain; a second terminal (G51) of the first semiconductor switch (Q51) is coupled to the first inner pin (531), and a third terminal of the first semiconductor switch (Q51) is coupled to the second inner pin (532); a second terminal (G52) of the second semiconductor switch (Q52) is coupled to the third inner pin (533), and a third terminal of the second semiconductor switch (Q52) is coupled to the fourth inner pin (534); and the metal bottom plate (50) couples the fifth inner pin (545), and each of the plurality of inner pins (531, 532, 533, 534, 535) is coupled to a same lead frame, wherein other inner pins (531, 532, 533, 534) than the fifth inner pin (535) in the plurality of inner pins (531, 532, 533, 534, 535) are disposed along a first side surface of the metal bottom plate (50), and the fifth inner pin (535) is disposed along a second side surface of the metal bottom plate (50), wherein the first side surface is adjacent to the second side surface.
  2. The package structure (5) according to claim 1, wherein the package structure (5) further comprises a first diode (D141) and a second diode (D142), wherein the first diode (D141) and the second diode (D142) are disposed on the metal bottom plate (50), and both a cathode of the first diode (D141) and a cathode of the second diode (D142) are coupled to the metal bottom plate (50); and an anode of the first diode (D141) is coupled to the second inner pin (1432), and an anode of the second diode (D142) is coupled to the fourth inner pin (1434).
  3. The package structure (5) according to claim 1 or 2, wherein the package structure (5) further comprises outer pins (541, 542, 543, 544, 545) that are in a one-to-one correspondence with the inner pins (531, 532, 533, 534, 535); and any inner pin (531, 532, 533, 534, 535) is coupled to an outer pin (541, 542, 543, 544, 545) corresponding to the any inner pin (531, 532, 533, 534, 535); and all of the plurality of inner pins (531, 532, 533, 534, 535) are covered by a package housing, wherein the package housing is formed by plastically packaging the metal bottom plate and all of the plurality of inner pins (531, 532, 533, 534, 535) by using a plastic package material; and the outer pins (541, 542, 543, 544, 545) that are in a one-to-one correspondence with the inner pins (531, 532, 533, 534, 535) are exposed outside the package housing.
  4. The package structure (3) according to claim 1 or 2, wherein the package structure further comprises a first outer pin (541) coupled to the first inner pin (531), a second outer pin (542) coupled to the second inner pin (532), a third outer pin (543) coupled to the third inner pin (532), and a fourth outer pin (544) coupled to the fourth inner pin (534), wherein the first inner pin (531), the second inner pin (532), the third inner pin (533), the fourth inner pin (534), and the fifth inner pin (535) are all covered by a package housing; and the package housing is formed by plastically packaging the metal bottom plate (50) and all of the plurality of inner pins (531, 532, 533, 534, 535) by using a plastic package material; and the first outer pin (541), the second outer pin (542), the third outer pin (543), and the fourth outer pin (544) are exposed outside the package housing; and a cutting surface of the fifth inner pin (535) is exposed outside the package housing, and the cutting surface of the fifth inner pin (535) is formed after a part that is of the fifth inner pin (535) and that exceeds the package housing is cut off.
  5. The package structure according to any one of claims 1 to 4, wherein the plurality of inner pins (531, 532, 533, 534, 535) further comprise a sixth inner pin and a seventh inner pin, and the package structure further comprises a sixth outer pin coupled to the sixth inner pin and a seventh outer pin coupled to the seventh inner pin, wherein the third terminal of the first semiconductor switch is further coupled to the sixth inner pin; and the third terminal of the second semiconductor switch is further coupled to the seventh inner pin; and the sixth inner pin and the seventh inner pin are both covered by the package housing, wherein the package housing is formed by plastically packaging the metal bottom plate and all of the plurality of inner pins by using the plastic package material; and the sixth outer pin and the seventh outer pin are both exposed outside the package housing.
  6. The package structure according to any one of claims 1 to 5, wherein pin widths of the first inner pin and the third inner pin are less than pin widths of the fifth inner pin, the second inner pin, and the fourth inner pin.
  7. A bidirectional switch semiconductor device, wherein the semiconductor device comprises a package housing and a chip having the package structure according to any one of claims 1 to 6, and some of pins of the chip are exposed outside the package housing.
  8. A power converter, wherein the power converter comprises a controller and the semiconductor device according to claim 7; and the controller is configured to control turn-on or turn-off of the semiconductor device to perform power conversion.

Description

TECHNICAL FIELD This application relates to the field of semiconductor technologies, and in particular, to a package structure of a bidirectional switch, a semiconductor device, and a power converter. BACKGROUND For a specific circuit diagram of a bidirectional switch, refer to FIG. 1. As shown in FIG. 1, the bidirectional switch includes a semiconductor switch Q11 and a semiconductor switch Q12. For example, when the semiconductor switch Q11 is turned off and the semiconductor switch Q12 is turned on, a current may flow from a parasitic diode of the semiconductor switch Q11 through the semiconductor switch Q12, and a current flow direction may be understood as a first direction (that is, left-in and right-out). When the semiconductor switch Q11 is turned on and the semiconductor switch Q12 is turned off, a current may flow from a parasitic diode of the semiconductor switch Q12 through the semiconductor switch Q11, and a current flow direction may be understood as a second direction (that is, right-in and left-out). In other words, the bidirectional switch is a switch that can allow a current to flow bidirectionally. The bidirectional switch in the conventional technology is specifically implemented as two discrete semiconductor devices. In this case, for a schematic diagram of a package structure of the bidirectional switch, refer to FIG. 2. As shown in FIG. 2, regardless of whether the current flow direction is the first direction or the second direction, the current needs to pass through a pin S11, a thin metal wire (Wire Bonding) 111, a pin D11, printed circuit board (PCB) wiring 13, a pin D12, a thin metal wire 121, and a pin S12. It can be learned that, in the package structure of the bidirectional switch provided in the conventional technology, stray inductance of a current loop includes inductance brought by four pins, two sections of thin metal wires, and one section of PCB wiring, and the stray inductance is relatively large. AMENDED DESCRIPTION The document US 2018/0006639 A1 shows an electronic switching device and a reverse polarity protection circuit. The document US 2006/0043545 A1 shows a SMT three-phase inverter package and an according lead frame. The document CN 110 752 208 A shows a three-phase full-bridge module and an according manufacturing method. The document CN 110 504 250 A shows a cascade enhancement power module packaging structure and an according packaging method. The document US 2014/210061 A1 shows a chip arrangement and an according chip package. The document CN 111 564 425 A shows an integrative chip structure, a lead wire frame, and an according power supply module. The document US2015/0115313 A1 discloses a semiconductor device package that includes a bidirectional switch circuit. The document CN201478306 U discloses a flat packaged dual field effect transistor device. SUMMARY The present invention is defined by the independent claims. Further advantageous developments are shown by the dependent claims. Embodiments of this application provide a package structure of a bidirectional switch, a semiconductor device, and a power converter, so as to reduce stray inductance of a current loop of the bidirectional switch. According to a first aspect, forming part of the present invention, an embodiment of this application provides a package structure of a bidirectional switch. The package structure includes a metal bottom plate, a first semiconductor switch, a second semiconductor switch, and a plurality of inner pins. The plurality of inner pins include a first inner pin, a second inner pin, a third inner pin, a fourth inner pin, and a fifth inner pin. In a specific implementation, also forming part of the present invention, the first semiconductor switch and the second semiconductor switch are disposed on the metal bottom plate, and both a first terminal of the first semiconductor switch and a first terminal of the second semiconductor switch are coupled to the metal bottom plate; a second terminal of the first semiconductor switch is coupled to the first inner pin; a third terminal of the first semiconductor switch is coupled to the second inner pin; a second terminal of the second semiconductor switch is coupled to the third inner pin; a third terminal of the second semiconductor switch is coupled to the fourth inner pin; and the metal bottom plate is coupled to the fifth inner pin. In this embodiment of this application, stray inductance of a current loop of the bidirectional switch includes inductance brought by the second inner pin, a second outer pin coupled to the second inner pin, the fourth inner pin, a fourth outer pin coupled to the fourth inner pin, and two sections of thin metal wires. The second inner pin and the second outer pin are integrally formed, and the fourth inner pin and the fourth outer pin are integrally formed. That is, stray inductance of the current loop of the bidirectional switch in this embodiment of this application includes inductance brought b