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EP-4612228-B1 - SILICONE BASED RESIN COMPOSITION, AND SEMICONDUCTOR DEVICE COMPRISING THE SAME

EP4612228B1EP 4612228 B1EP4612228 B1EP 4612228B1EP-4612228-B1

Inventors

  • CHOI, JONGHAK
  • Joo, YoungHyuk
  • KIM, TAEJOON
  • LEE, Jungyu

Dates

Publication Date
20260506
Application Date
20230111

Claims (9)

  1. A silicone-based resin composition, comprising: an organic polysiloxane; and a conductive filler, and wherein the conductive filler comprises a conductive powder that comprises flake-type particles having a thickness of 0.01 µ m to 5 µ m, wherein a relative ratio of a change in thermal conductivity to a change in Shore A hardness, measured by a measurement method below, of the silicone-based resin composition is 40% or less: [Measurement method] 1) The silicone-based resin composition is molded by hot press under conditions of 165°C and a pressure of 26 kgf/cm 2 for 15 minutes to manufacture a sheet. 2) The sheet is cured at 150°C for 5 minutes to manufacture a first cured product. The first cured product is subjected to measurement of a Shore A hardness according to ASTM D-2240 and measurement of a thermal conductivity according to ISO 22007-2 at 25°C. 3) The first cured product is cured at 150°C for 120 minutes to manufacture a second cured product. The second cured product is subjected to measurement of a Shore A hardness according to ASTM D-2240 and measurement of a thermal conductivity according to ISO 22007-2 at 25°C temperature. 4) A relative ratio of a change in thermal conductivity to a change in Shore A hardness is calculated according to Equation 1 below: TC H 2 − TC H 1 / H 2 − H 1 × 100 (where H1 denotes the Shore A hardness of the first cured product, H2 denotes the Shore A hardness of the second cured product, TC H1 denotes a thermal conductivity (W/mK) in H1, and TCH2 denotes a thermal conductivity (W/mK) in H2.).
  2. The silicone-based resin composition according to claim 1, wherein the silicone-based resin composition has a thermal conductivity change rate of 30% or less calculated according to Equation 2 below: TC H 2 − TC H 1 / TC H 2 × 100 (where TCH1 and TCH2 are as defined in Equation 1 above.).
  3. The silicone-based resin composition according to claim 1, wherein a cured product of the silicone-based resin composition has a Shore A hardness of 95 or less according to ASTM D-2240.
  4. The silicone-based resin composition according to claim 1, wherein the silicone-based resin composition satisfies Equation 3 below: Y = 0.0169 X + 6.5193 (where X denotes a Shore A hardness according to ASTM D-2240 in a cured product of the silicone-based resin composition, Y denotes a thermal conductivity according to ISO 22007-2 at 25°C of a cured product of the silicone-based resin composition, and Y is 6 W/mK to 8 W/mK.).
  5. The silicone-based resin composition according to claim 4, wherein, when X is in a range of 3 to 57, a coefficient of determination (R 2 ) is 0.95 or more.
  6. The silicone-based resin composition according to claim 1, wherein the conductive powder has a specific surface area, when measured according to the BET method as defined in the description, of 0.1 m 2 /g to 1.5 m 2 /g.
  7. The silicone-based resin composition according to claim 1, wherein the conductive powder has an average particle diameter (D 50 ), when measured by laser diffraction method, of 1.0 µ m to 20.0 µ m.
  8. The silicone-based resin composition according to claim 1, wherein an ignition loss of the conductive powder, when measured at a temperature of 538°C for one hour, is 0.4 % by weight or less.
  9. A semiconductor device, comprising: a semiconductor package; a heat dissipation part disposed on the semiconductor package; and a heat conduction layer interposed between the semiconductor package and the heat dissipation part, wherein the heat conduction layer comprises a silicone-based resin composition, the silicone-based resin composition comprises organic polysiloxane and a conductive filler according to claim 1, and a relative ratio of a change in thermal conductivity to a change in Shore A hardness, measured by a measurement method below, of the silicone-based resin composition is 40% or less: [Measurement method] 1) The silicone-based resin composition is molded by hot press under conditions of 165°C and a pressure of 26 kgf/cm 2 for 15 minutes to manufacture a sheet. 2) The sheet is cured at 150°C for 5 minutes to manufacture a first cured product. The first cured product is subjected to measurement of a Shore A hardness according to ASTM D-2240 and measurement of a thermal conductivity according to ISO 22007-2 at 25°C. 3) The first cured product is cured at 150°C for 120 minutes to manufacture a second cured product. The second cured product is subjected to measurement of a Shore A hardness according to ASTM D-2240 and measurement of a thermal conductivity according to ISO 22007-2 at 25°C temperature. 4) A relative ratio of a change in thermal conductivity to a change in Shore A hardness is calculated according to Equation 1 below: TC H 2 − TC H 1 / H 2 − H 1 × 100 (where H1 denotes the Shore A hardness of the first cured product, H2 denotes the Shore A hardness of the second cured product, TC H1 denotes a thermal conductivity (W/mK) in H1, and TCH2 denotes a thermal conductivity (W/mK) in H2.).

Description

[Technical Field] The present invention relates to a silicone-based resin composition and a semiconductor device including the same. [Background Art] Since most electronic components generate heat during use thereof, it is necessary to remove heat from the electronic components for the proper operation thereof. In particular, in integrated circuit elements such as CPUs used in personal computers, the amount of heat dissipated is increasing due to an increase in operating frequency, whereby countermeasures against heat have emerged as an important issue. Accordingly, many methods of dissipating such heat have been proposed, and in electronic components dissipating a large amount of heat, a method of dissipating heat by interposing a thermally conductive material, such as thermally conductive grease or a thermally conductive sheet, between an electronic component and a member such as a heat sink has been proposed. Korean Patent Application Publication No. 10-2020-0086307 discloses a semiconductor device including a thermally conductive material. Patent document 2 describes a silicone composition comprising an organopolysiloxane and 200 parts by weight of a flaky silver powder as heat conductive filler having an average particle size of 2.5 µm, a tap density of 5.0 g/cm 3 and a specific surface area of 0.80 m2/g. The thermal conductive silicone composition is used in the production of a semiconductor device wherein the silicone composition is interposed between the surface of a heat-generating electronic part and a heat dissipater. Patent document 3 relates to a silicone composition comprising an organopolysiloxane and 500 parts by weight of a granular silver powder as heat conductive filler having an average particle size of 7.3 µm, a tap density of 1.4 g/cm3 and a specific surface area of 0.60 m2/g. The thermal conductive silicone composition is used in the production of a semiconductor device wherein the silicone composition is interposed between conductive contact elements and the surface of an electric connector of a semiconductor device. Patent document 4 describes a silicone composition used as a thermoconductive paste in the manufacture of semiconductor devices. The silicone composition comprises an organopolysiloxane and 65 wt.% of a flaky-like silver powder having a tap density of 4.0-6.5 g/cm 3, a specific surface area of 0.4-1.5 m2/g, a particle size D50 of 2.5-8.0 µm and an ignition loss of less than 1.0%. Finally, patent document 5 discloses a resin composition comprising an organopolysiloxane, a silver powder and nano-silver modified carbon nanotubes. The silver powder is characterised by a tap density of 2.4-4.0 g/cm3, a specific surface area of 1.2-2.5 m2/g, a particle size D50 of 4.0-6.1 µm and an ignition loss of less than 1%. The thermal conductive silicone composition is used in the production of a semiconductor device as a heat conductive adhesive and provides connection between the chip and the heat sink. However, a thermally conductive material has variations in hardness depending on process conditions, which has caused a problem in that the reliability of product performance is decreased due to differently expressed thermal conductivity characteristics. [Related Art Document] [Patent Document] (Patent Document 1) Korean Patent Application Publication No. 10-2020-0086307(Patent Document 2) European Patent Application Publication EP 3 533 836(Patent Document 3) United States Patent Application Publication No. 2004/203268(Patent Document 4) Chinese Patent Application Publication No. 109 777 335(Patent Document 5) Chinese Patent Application Publication No. 110 079 266 [Disclosure] [Technical Problem] In accordance with an aspect of the present invention, the above and other objects can be accomplished by the provision of a silicone-based resin composition with minimized thermal conductivity variation and excellent mechanical properties and a semiconductor device including the silicone-based resin composition. [Technical Solution] In accordance with an aspect of the present invention, the above and other objects can be accomplished by the provision of a silicone-based resin composition, according to claim 1, including: an organic polysiloxane; and a conductive filler, wherein a relative ratio of a change in thermal conductivity to a change in Shore A hardness, measured by a measurement method below, of the silicone-based resin composition is 40% or less: [Measurement method] 1) The silicone-based resin composition is molded by hot press under conditions of 165°C and a pressure of 26 kgf/cm2 for 15 minutes to manufacture a sheet.2) The sheet is cured at 150°C for 5 minutes to manufacture a first cured product. The first cured product is subjected to measurement of a Shore A hardness according to ASTM D-2240 and measurement of a thermal conductivity according to ISO 22007-2 at 25°C.3) The first cured product is cured at 150°C for 120 minutes to manufacture a second cured product. The second c