EP-4709087-A3 - INTEGRATED CIRCUIT DEVICES AND METHODS OF FORMING THE SAME
EP4709087A3EP 4709087 A3EP4709087 A3EP 4709087A3EP-4709087-A3
Abstract
A semiconductor device includes a substrate, a lower channel stack on the substrate, an upper channel stack on the lower channel stack, a gate electrode extending around the lower channel stack and the upper channel stack, a gate cut region that is on the substrate and includes an insulating material, a semiconductor material layer between the upper channel stack and the gate cut region, and an insulating layer that is between the semiconductor material layer and the upper channel stack.
Inventors
- PARK, BEOMJIN
- Park, Kibyung
- Park, Junmo
- SEO, KANG-ILL
Assignees
- SAMSUNG ELECTRONICS CO., LTD.
Dates
- Publication Date
- 20260513
- Application Date
- 20250807